Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 11

Results: 21

Nina Aleksandrovna Goryunova (1916–1971).

Published in:: Semiconductors, 2006, v. 40, n. 11, p. 1372, doi. 10.1134/S1063782606110212
Publication type:: Article

Nonlinear optical and photosensitive properties of polyamidoimides containing commercial azo dyes.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1346, doi. 10.1134/S1063782606110169

By:

Aleksandrova, E. L.;
Goĭkhman, M. Ya.;
Subbotina, L. I.;
Smirnov, N. N.;
Bursian, A. É;
Yakimanskiĭ, A. V. Y.;
Kudryavtsev, V. V.

Publication type:

Article

Conductivity of quantum wires in uniform magnetic fields.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1333, doi. 10.1134/S1063782606110145

By:

Sinyavskii, É. P.;
Khamidullin, R. A.

Publication type:

Article

Structural mechanisms of photoeffect in polyimide structures containing heterocyclic fragments.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1353, doi. 10.1134/S1063782606110182

By:

Aleksandrova, E. L.

Publication type:

Article

Blue flip-chip AlGaInN LEDs with removed sapphire substrate.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1363, doi. 10.1134/S1063782606110194

By:

Smirnova, I. P.;
Markov, L. K.;
Zakheim, D. A.;
Arakcheeva, E. M.;
Rymalis, M. R.

Publication type:

Article

Interaction of coherent confined optical modes in neighboring 3D cylindrical ZnO microcavities.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1368, doi. 10.1134/S1063782606110200

By:

Gruzintsev, A. N.;
Volkov, V. T.;
Knyazev, M. A.;
Yakimov, E. E.

Publication type:

Article

The formation of natural oxide on the mirrors of GaSb/GaInAsSb/GaAlAsSb laser heterostructures at places of emergence of al-rich layers.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1247, doi. 10.1134/S1063782606110017

By:

Dement'ev, P. A.;
Dunaevski', M. S.;
Makarenko, I. V.;
Petrov, V. N.;
Titkov, A. N.;
Baranov, A. N.;
Yarekha, D. A.;
Laiho, R.

Publication type:

Article

Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1255, doi. 10.1134/S1063782606110029

By:

Daunov, M. I.;
Arslanov, R. K.;
Gadjialiev, M. M.;
Kortunova, E. V.;
Khokhlachev, P. P.;
Shvansky, P. P.

Publication type:

Article

Energy-band structure of the A(Sn1− x Mx)O3 (A = Ca, Sr, Ba; M = Mn, Fe, Co) perovskite-type phases: A search for new magnetic semimetals.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1261, doi. 10.1134/S1063782606110030

By:

Shein, I. R.;
Kozhevnikov, V. L.;
Ivanovskii, A. L.

Publication type:

Article

Spontaneous and stimulated emission from CdxHg1− x Te semiconductor films.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1266, doi. 10.1134/S1063782606110042

By:

Andronov, A. A.;
Nozdrin, Yu. N.;
Okomel'kov, A. V.;
Varavin, V. S.;
Smirnov, R. N.;
Ikusov, D. G.

Publication type:

Article

Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1275, doi. 10.1134/S1063782606110054

By:

Romaka, V. A.;
Fruchart, D.;
Stadnyk, Yu. V.;
Tobola, J.;
Gorelenko, Yu. K.;
Shelyapina, M. G.;
Romaka, L. P.;
Chekurin, V. F.

Publication type:

Article

Bistability and electrical activity of the vacancy-dioxygen complex in silicon.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1282, doi. 10.1134/S1063782606110066

By:

Murin, L. I.;
Markevich, V. P.;
Medvedeva, I. F.;
Dobaczewski, L.

Publication type:

Article

Excitons and polaritons in AlGaAs semiconductor alloys.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1287, doi. 10.1134/S1063782606110078

By:

Seĭsyan, R. P.;
Kosobukin, V. A.;
Markosov, M. S.

Publication type:

Article

Stimulated photoconductivity of copper-compensated gallium phosphide.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1297, doi. 10.1134/S106378260611008X

By:

Pribylov, N. N.;
Kozhevnikov, A. A.

Publication type:

Article

Two-electron centers with negative correlation energy in Pb1− x SnxSe solid solutions.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1301, doi. 10.1134/S1063782606110091

By:

Nemov, S. A.;
Kastro, R. A.;
Alekseeva, A. Yu.;
Seregin, P. P.;
Dobrodub, A. A.

Publication type:

Article

Infrared spectroscopy of bonded silicon wafers.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1304, doi. 10.1134/S1063782606110108

By:

Milekhin, A. G.;
Himcinschi, C.;
Friedrich, M.;
Hiller, K.;
Wiemer, M.;
Gessner, T.;
Schulze, S.;
Zahn, D. R.

Publication type:

Article

Determination of the composition and stresses in GexSi(1− x) heterostructures from Raman spectroscopy data: Refinement of model parameters.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1314, doi. 10.1134/S106378260611011X

By:

Volodin, V. A.;
Efremov, M. D.;
Deryabin, A. S.;
Sokolov, L. V.

Publication type:

Article

Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121

By:

Il'chuk, G. A.;
Kusznezh, V. V.;
Petrus', R. Yu.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Ukrainets, V. O.

Publication type:

Article

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1326, doi. 10.1134/S1063782606110133

By:

Gerchikov, L. G.;
Mamaev, Yu. A.;
Subashiev, A. V.;
Yashin, Yu. P.;
Vasil'ev, D. A.;
Kuz'michev, V. V.;
Zhukov, A. E.;
Semenova, E. S.;
Vasil'ev, A. P.;
Ustinov, V. M.

Publication type:

Article

Hopping conductivity in low-porosity mesoporous silicon formed on p +-Si:B.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1350, doi. 10.1134/S1063782606110170

By:

Zimin, S. P.

Publication type:

Article

Localization of electron-hole complexes at fluctuations of interfaces of quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1338, doi. 10.1134/S1063782606110157

By:

Semina, M. A.;
Sergeev, R. A.;
Suris, R. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 11

Nina Aleksandrovna Goryunova (1916–1971).

Nonlinear optical and photosensitive properties of polyamidoimides containing commercial azo dyes.

Conductivity of quantum wires in uniform magnetic fields.

Structural mechanisms of photoeffect in polyimide structures containing heterocyclic fragments.

Blue flip-chip AlGaInN LEDs with removed sapphire substrate.

Interaction of coherent confined optical modes in neighboring 3D cylindrical ZnO microcavities.

The formation of natural oxide on the mirrors of GaSb/GaInAsSb/GaAlAsSb laser heterostructures at places of emergence of al-rich layers.

Electrical and thermoelectric properties of ZnO under atmospheric and hydrostatic pressure.

Energy-band structure of the A(Sn<sub>1− x </sub>M<sub>x</sub>)O<sub>3</sub> (A = Ca, Sr, Ba; M = Mn, Fe, Co) perovskite-type phases: A search for new magnetic semimetals.

Spontaneous and stimulated emission from Cd<sub>x</sub>Hg<sub>1− x </sub> Te semiconductor films.

Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type.

Bistability and electrical activity of the vacancy-dioxygen complex in silicon.

Excitons and polaritons in AlGaAs semiconductor alloys.

Stimulated photoconductivity of copper-compensated gallium phosphide.

Two-electron centers with negative correlation energy in Pb<sub>1− x </sub>Sn<sub>x</sub>Se solid solutions.

Infrared spectroscopy of bonded silicon wafers.

Determination of the composition and stresses in Ge<sub>x</sub>Si<sub>(1− x)</sub> heterostructures from Raman spectroscopy data: Refinement of model parameters.

Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets.

Hopping conductivity in low-porosity mesoporous silicon formed on p <sup>+</sup>-Si:B.

Localization of electron-hole complexes at fluctuations of interfaces of quantum dots.