Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 1

Results: 22

Doping of epitaxial layers and heterostructures based on HgCdTe.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 1, doi. 10.1134/S1063782606010015

By:

Mynbaev, K.D.;
Ivanov-Omskiĭ, V.I.

Publication type:

Article

Thermoelectric efficiency of single crystal semiconducting ruthenium silicide.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 27, doi. 10.1134/S1063782606010039

By:

Krivosheev, A.E.;
Ivanenko, L.I;
Filonov, A.B.;
Shaposhnikov, V.L.;
Behr, G.;
Schumann, J.;
Borisenko, V.E.

Publication type:

Article

A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 43, doi. 10.1134/S1063782606010076

By:

Orlov, L.;
Smyslova, T.

Publication type:

Article

Relaxation of photoexcited silver chloride.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 22, doi. 10.1134/S1063782606010027

By:

Klyuev, V.G.;
Gerasimenko, Yu.V.;
Korobkina, N.I.

Publication type:

Article

Dielectric properties of polycrystalline ZnS.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 33, doi. 10.1134/S1063782606010040

By:

Shevarenkov, D.N.;
Shchurov, A.F.

Publication type:

Article

Effect of band inversion on the phonon spectra of the Hg1- x ZnxTe alloys.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 39, doi. 10.1134/S1063782606010064

By:

Vodop’yanov, L.K.;
Kucherenko, I.V.;
Marchelli, A.;
Burattini, E.;
Piccinini, M.;
Cestelli Guidi, M.;
Tribulet, R.

Publication type:

Article

Physical properties of SnO2 films subjected to incoherent pulsed radiation.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 55, doi. 10.1134/S106378260601009X

By:

Rembeza, S.I.;
Rembeza, E.S.;
Svistova, T.V.;
Borsyakova, O.I.

Publication type:

Article

Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 59, doi. 10.1134/S1063782606010106

By:

Zakharov, M.V.;
Kagadei, V.A.;
L’vova, T.N.;
Nefedtsev, E.V.;
Oskomov, K.V.;
Proskurovsky, D.I.;
Romanenko, S.V.;
Fattakhov, Ya.V.;
Khaibullin, I.B.

Publication type:

Article

Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 64, doi. 10.1134/S1063782606010118

By:

Baĭramov, B.Kh.;
Bodnar’, I.V.;
Emtsev, V.V.;
Poloskin, D.S.;
Rud’, V.Yu.;
Rud’, Yu.V.;
Yakushev, M.V.

Publication type:

Article

A Mössbauer study of Eu donor centers in PbS.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 36, doi. 10.1134/S1063782606010052

By:

Khuzhakulov, É.S.

Publication type:

Article

Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 50, doi. 10.1134/S1063782606010088

By:

Vlasenko, A.I.;
Vlasenko, Z.K

Publication type:

Article

Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 72, doi. 10.1134/S1063782606010131

By:

Kachurin, G.A.;
Cherkova, S.G.;
Volodin, V.A.;
Marin, D.M.;
Tetel’baum, D.I.;
Becker, H.

Publication type:

Article

Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 84, doi. 10.1134/S1063782606010155

By:

Savel’ev, A.V.;
Maksimov, M.V.;
Ustinov, V.M.;
Seĭsyan, R.P.

Publication type:

Article

Radiative recombination in Zn1- x MnxTe/Zn0.59Mg0.41Te quantum well structures: Exciton emission and intracenter luminescence.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 67, doi. 10.1134/S106378260601012X

By:

Agekyan, V.F.;
Vasil’ev, N.N.;
Serov, A.Yu.;
Stepanov, Yu.A.;
Tazaev, U.V.;
Filosofov, N.G.;
Karczewski, G.

Publication type:

Article

Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 108, doi. 10.1134/S1063782606010192

By:

Zvyagin, I.P.;
Kurova, I.A.;
Nal’gieva, M.A.;
Ormont, N.N.

Publication type:

Article

Exciton characteristics and exciton luminescence of silicon quantum dot structures.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 94, doi. 10.1134/S1063782606010179

By:

Kupchak, I.M.;
Korbutyak, D.V.;
Kryuchenko, Yu.V.;
Sachenko, A.V.;
Sokolovskiĭ, I.O.;
Sreseli, O.M.

Publication type:

Article

Impedance spectroscopy of ultrafine-grain SnO2 ceramics with a variable grain size.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 104, doi. 10.1134/S1063782606010180

By:

Vasil’ev, R.B.;
Dorofeev, S.G.;
Rumyantseva, M.N.;
Ryabova, L.I.;
Gas’kov, A.M.

Publication type:

Article

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 79, doi. 10.1134/S1063782606010143

By:

Tarasov, G.G.;
Zhuchenko, Z.Ya.;
Lisitsa, M.P.;
Mazur, Yu.I.;
Wang, Zh.M.;
Salamo, G.J.;
Warming, T.;
Bimberg, D.;
Kissel, H.

Publication type:

Article

Precision of quantization of the hall conductivity in a finite-size sample: Power law.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 89, doi. 10.1134/S1063782606010167

By:

Greshnov, A.A.;
Kolesnikova, É.N.;
Zegrya, G.G.

Publication type:

Article

Nonuniformity of carrier injection and the degradation of blue LEDs.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 118, doi. 10.1134/S1063782606010210

By:

Bochkareva, N.I.;
Efremov, A.A.;
Rebane, Yu. T.;
Gorbunov, R.I.;
Klochkov, A.V.;
Shreter, Yu.G.

Publication type:

Article

Effect of a rear contact on the electrical properties of the CdS/CdTe-based thin-film solar cells.

Published in:

Semiconductors, 2006, v. 40, n. 1, p. 113, doi. 10.1134/S1063782606010209

By:

Khripunov, G.S.

Publication type:

Article

Erratum.

Published in:

2006

By:

Ageeva, N.N.;
Bronevoi, I.L.;
Krivonosov, A.N.;
Kumekov, S.E.;
Nalet, T.A.;
Stegantsov, S.V.

Publication type:

Correction Notice

Works matching IS 10637826 AND DT 2006 AND VI 40 AND IP 1

Doping of epitaxial layers and heterostructures based on HgCdTe.

Thermoelectric efficiency of single crystal semiconducting ruthenium silicide.

A comparative analysis of the dissociation kinetics models for silane molecules on the surface at epitaxial growth, of silicon films, in vacuum.

Relaxation of photoexcited silver chloride.

Dielectric properties of polycrystalline ZnS.

Effect of band inversion on the phonon spectra of the Hg<sub>1- x </sub>Zn<sub>x</sub>Te alloys.

Physical properties of SnO<sub>2</sub> films subjected to incoherent pulsed radiation.

Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons.

Effect of γ-ray radiation on photosensitivity of ZnO/CuIn<sub>3</sub>Se<sub>5</sub> heterojunctions.

A Mössbauer study of Eu donor centers in PbS.

Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures.

Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals.

Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures.

Radiative recombination in Zn<sub>1- x </sub>Mn<sub>x</sub>Te/Zn<sub>0.59</sub>Mg<sub>0.41</sub>Te quantum well structures: Exciton emission and intracenter luminescence.

Hopping ε<sub>2</sub> conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature.

Exciton characteristics and exciton luminescence of silicon quantum dot structures.

Impedance spectroscopy of ultrafine-grain SnO<sub>2</sub> ceramics with a variable grain size.

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures.

Precision of quantization of the hall conductivity in a finite-size sample: Power law.

Nonuniformity of carrier injection and the degradation of blue LEDs.

Effect of a rear contact on the electrical properties of the CdS/CdTe-based thin-film solar cells.

Erratum.