Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 7

Results: 25

Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 738, doi. 10.1134/1.1992625
By:
- Isakov, G. I.
Publication type:
Article
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 735, doi. 10.1134/1.1992624
By:
- Oleĭnich-Lysyuk, A. V.;
- Gutsulyak, B. I.;
- Fodchuk, I. M.
Publication type:
Article
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 742, doi. 10.1134/1.1992626
By:
- Aleksandrov, O. V.;
- Zakhar'in, A. O.;
- Sobolev, N. A.
Publication type:
Article
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
By:
- Blokhin, S. A.;
- Smirnov, A. N.;
- Sakharov, A. V.;
- Gladyshev, A. G.;
- Kryzhanovskaya, N. V.;
- Maleev, N. A.;
- Zhukov, A. E.;
- Semenova, E. S.;
- Bedarev, D. A.;
- Nikitina, E. V.;
- Kulagina, M. M.;
- Maksimov, M. V.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 754, doi. 10.1134/1.1992628
By:
- Savitskiĭ, A. V.;
- Parfenyuk, O. A.;
- Ilashchuk, M. I.;
- Ulyanitskiĭ, K. S.;
- Chupyra, S. N.;
- Vakhnyak, N. D.
Publication type:
Article
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 759, doi. 10.1134/1.1992629
By:
- Astrova, E. V.;
- Perova, T. S.;
- Grudinkin, S. A.;
- Tolmachev, V. A.;
- Pilyugina, Yu. A.;
- Voronkov, V. B.;
- Vij, J. K.
Publication type:
Article
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 768, doi. 10.1134/1.1992630
By:
- Pokotilo, Yu. M.;
- Petukh, A. N.;
- Litvinov, V. V.;
- Tsvyrko, V. G.
Publication type:
Article
Weak Ferromagnetism in InSe:Mn Layered Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 772, doi. 10.1134/1.1992631
By:
- Slyn'ko, V. V.;
- Khandozhko, A. G.;
- Kovalyuk, Z. D.;
- Zaslonkin, A. V.;
- Slyn'ko, V. E.;
- Arciszewska, M.;
- Dobrowolski, W. D.
Publication type:
Article
Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0≤x≤0.02) and Tl1 – xCuxInS2 (0≤x≤0.015) Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 777, doi. 10.1134/1.1992632
By:
- Georgobiani, A. N.;
- Matiev, A. Kh.;
- Khamkhoev, B. M.
Publication type:
Article
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 780, doi. 10.1134/1.1992633
By:
- Bolshakova, I. A.;
- Boĭko, V. M.;
- Brudnyĭ, V. N.;
- Kamenskaya, I. V.;
- Kolin, N. G.;
- Makido, E. Yu.;
- Moskovets, T. A.;
- Merkurisov, D. I.
Publication type:
Article
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0≤x≤0.02) Crystals.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 786, doi. 10.1134/1.1992634
By:
- Georgobiani, A. N.;
- Matiev, A. Kh.;
- Khamkhoev, B. M.
Publication type:
Article
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 789, doi. 10.1134/1.1992635
By:
- Bakhadyrkhanov, M. K.;
- Sattarov, O. É.;
- Iliev, Kh. M.;
- Ayupov, K. S.;
- Umaĭer, Tuérdi
Publication type:
Article
Specific Features of the Physical Properties of a Modified CdTe Surface.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 792, doi. 10.1134/1.1992636
By:
- Makhniy, V. P.
Publication type:
Article
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 795, doi. 10.1134/1.1992637
By:
- Bochkareva, N. I.;
- Zhirnov, E. A.;
- Efremov, A. A.;
- Rebane, Yu. T.;
- Gorbunov, R. I.;
- Klochkov, A. V.;
- Lavrinovich, D. A.;
- Shreter, Yu. G.
Publication type:
Article
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 800, doi. 10.1134/1.1992638
By:
- Bilenko, D. I.;
- Belobrovaya, O. Ya.;
- Zharkova, É. A.;
- Terin, D. V.;
- Khasina, E. I.
Publication type:
Article
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 805, doi. 10.1134/1.1992639
By:
- Arutyunyan, V. A.;
- Arutyunyan, S. L.;
- Demirchyan, G. O.;
- Petrosyan, G. Sh.
Publication type:
Article
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 811, doi. 10.1134/1.1992640
By:
- Aronzon, B. A.;
- Kovalev, D. Yu.;
- Ryl'kov, V. V.
Publication type:
Article
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 820, doi. 10.1134/1.1992641
By:
- Musikhin, Yu. G.;
- Cirlin, G. E.;
- Dubrovskiĭ, V. G.;
- Samsonenko, Yu. B.;
- Tonkikh, A. A.;
- Bert, N. A.;
- Ustinov, V. M.
Publication type:
Article
Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 826, doi. 10.1134/1.1992642
By:
- Kadushkin, V. I.
Publication type:
Article
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643
By:
- Terekhov, V. A.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Kashkarov, V. M.;
- Kurilo, O. V.;
- Turishchev, S. Yu.;
- Golodenko, A. B.;
- Domashevskaya, É. P.
Publication type:
Article
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 835, doi. 10.1134/1.1992644
By:
- Kononov, N. N.;
- Kuz'min, G. P.;
- Orlov, A. N.;
- Surkov, A. A.;
- Tikhonevich, O. V.
Publication type:
Article
Magnetic Properties of Iron-Modified Amorphous Carbon.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 840, doi. 10.1134/1.1992645
By:
- Yastrebov, S. G.;
- Ivanov-Omskiĭ, V. I.;
- Pop, V.;
- Morosanu, C.;
- Slav, A.;
- Voiron, J.
Publication type:
Article
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 845, doi. 10.1134/1.1992646
By:
- Aleksandrova, E. L.;
- Goĭkhman, M. Ya.;
- Podeshvo, I. V.;
- Kudryavtsev, V. V.
Publication type:
Article
High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 851, doi. 10.1134/1.1992647
By:
- Zakheĭm, D. A.;
- Smirnova, I. P.;
- Roznanskiĭ, I. V.;
- Gurevich, S. A.;
- Kulagina, M. M.;
- Arakcheeva, E. M.;
- Onushkin, G. A.;
- Zakheĭm, A. L.;
- Vasil'eva, E. D.;
- Itkinson, G. V.
Publication type:
Article
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 856, doi. 10.1134/1.1992648
By:
- Titkov, I. E.;
- Pronin, I. P.;
- Mashovets, D. V.;
- Delimova, L. A.;
- Liniĭchuk, I. A.;
- Grekhov, I. V.
Publication type:
Article

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 7

Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition.

Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon.

The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.

Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.

Low-Temperature Instabilities of the Electrical Properties of Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te:Cl Semi-insulating Crystals.

Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon.

Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy.

Weak Ferromagnetism in InSe:Mn Layered Crystals.

Dispersion of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) and Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>InS<sub>2</sub> (0≤x≤0.015) Crystals.

The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals.

The Electrooptic Effect and Anisotropy of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) Crystals.

Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese.

Specific Features of the Physical Properties of a Modified CdTe Surface.

The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes.

The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment.

Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field.

Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation.

The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.

Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field.

A Study of the Local Electronic and Atomic Structure in a-Si<sub>x</sub>C<sub>1 – </sub><sub>x</sub> Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.

Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder.

Magnetic Properties of Iron-Modified Amorphous Carbon.

Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes.

High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN.

A Ferroelectric Field Effect Transistor Based on a Pb(Zr<sub>x</sub>Ti<sub>1 – </sub><sub>x</sub>)O<sub>3</sub>/SnO<sub>2</sub> Heterostructure.