Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 6

Results: 21

Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 609, doi. 10.1134/1.1944847

By:

Kotlyarevsky, M. B.;
Rogozin, I. V.;
Marakhovskiı, A. V.

Publication type:

Article

Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation of Heavily Doped Silicon Layers.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 615, doi. 10.1134/1.1944848

By:

Aleksandrov, O. V.;
Afonin, N. N.

Publication type:

Article

Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 623, doi. 10.1134/1.1944849

By:

Deıbuk, V. G.;
Voznyı, A. V.

Publication type:

Article

Determination of the Concentration of Deep Levels in Semi-insulating CdS Single Crystals by Photoinduced-Current Transient Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 629, doi. 10.1134/1.1944850

By:

Odrinskiı, A. P.

Publication type:

Article

Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers Using Reflectance Spectra.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 636, doi. 10.1134/1.1944851

By:

Gamarts, A. E.;
Kanageeva, Yu. M.;
Moshnikov, V. A.

Publication type:

Article

Energy Parameters of Two-Electron Tin Centers in PbSe.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 638, doi. 10.1134/1.1944852

By:

Nemov, S. A.;
Nasredinov, F. S.;
Seregin, P. P.;
Seregin, N. P.;
Khuzhakulov, É. S.

Publication type:

Article

Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions of Impurity-Related Breakdown.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 642, doi. 10.1134/1.1944853

By:

Jandieri, K. M.;
Kachlishvili, Z. S.;
Stroganov, A. B.

Publication type:

Article

Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 650, doi. 10.1134/1.1944854

By:

Ageeva, N. N.;
Bronevoı, I. L.;
Krivonosov, A. N.;
Kumekov, S. E.;
Nalet, T. A.;
Stegantsov, S. V.

Publication type:

Article

Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 658, doi. 10.1134/1.1944855

By:

Pavlyshenko, B. M.;
Shuvar, R. Ya.

Publication type:

Article

Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 661, doi. 10.1134/1.1944856

By:

Georgobiani, A. N.;
Gruzintsev, A. N.;
Yakimov, E. E.;
Barthou, C.;
Benalloul, P.

Publication type:

Article

Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 666, doi. 10.1134/1.1944857

By:

Zhdan, A. G.;
Goldman, E. I.;
Gulyaev, Yu. V.;
Chucheva, G. V.

Publication type:

Article

Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858

By:

Blank, T. V.;
Goldberg, Yu. A.;
Zavarin, E. E.;
Konstantinov, O. V.;
Shmidt, N. M.

Publication type:

Article

The Effect of Adsorbed Molecules on the Charge-Carrier Spectrum in a Semiconductor Nanowire.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 679, doi. 10.1134/1.1944859

By:

Lykakh, V. A.;
Syrkin, E. S.

Publication type:

Article

Local Tunneling Spectroscopy of Silicon Nanostructures.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 685, doi. 10.1134/1.1944860

By:

Bagraev, N. T.;
Bouravlev, A. D.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Gehlhoff, W.;
Romanov, Yu. I.;
Rykov, S. A.

Publication type:

Article

Room-Temperature Electroreflectance and Reflectance of a GaAs/AlGaAs Single Quantum Well Structure.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 697, doi. 10.1134/1.1944861

By:

Herasimovich, A. A.;
Shokhovets, S. V.;
Gobsch, G.;
Domanevskiı, D. S.

Publication type:

Article

The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862

By:

Kryzhanovskaya, N. V.;
Egorov, A. Yu.;
Mamutin, V. V.;
Polyakov, N. K.;
Tsatsul’nikov, A. F.;
Kovsh, A. R.;
Ledentsov, N. N.;
Ustinov, V. M.;
Bimberg, D.

Publication type:

Article

Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 709, doi. 10.1134/1.1944863

By:

Shevaleevskiy, O. I.;
Myong, S. Y.;
Lim, K. S.;
Miyajima, S.;
Konagai, M.

Publication type:

Article

The Physical Properties of CdTe Doped with V and Ge.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 712, doi. 10.1134/1.1944864

By:

Paranchych, S. Yu.;
Paranchych, L. D.;
Makogonenko, V. N.;
Tanasyuk, Yu. V.;
Andriıchuk, M. D.;
Romanyuk, V. R.

Publication type:

Article

A New Memory Element Based on Silicon Nanoclusters in a ZrO<sub>2</sub> Insulator with a High Permittivity for Electrically Erasable Read-Only Memory.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 716, doi. 10.1134/1.1944865

By:

Gritsenko, V. A.;
Nasyrov, K. A.;
Gritsenko, D. V.;
Novikov, Yu. N.;
Aseev, A. L.;
Lee, J. H.;
Lee, J.-W.;
Kim, C. W.

Publication type:

Article

Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 722, doi. 10.1134/1.1944866

By:

Kosyachenko, L. A.;
Maslyanchuk, O. L.;
Sklyarchuk, V. M.

Publication type:

Article

A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 730, doi. 10.1134/1.1944867

By:

Bogdanova, E. V.;
Volkova, A. A.;
Cherenkov, A. E.;
Lebedev, A. A.;
Kakanakov, R. D.;
Kolaklieva, L. P.;
Sarov, G. A.;
Cholakova, T. M.;
Kirillov, A. V.;
Romanov, L. P.

Publication type:

Article