Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 6
Results: 21
Determination of the Concentration of Deep Levels in Semi-insulating CdS Single Crystals by Photoinduced-Current Transient Spectroscopy.
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- Semiconductors, 2005, v. 39, n. 6, p. 629, doi. 10.1134/1.1944850
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- Article
Kinetics of Defect Formation in ZnO Subjected to a Flux of Oxygen Radicals.
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- Semiconductors, 2005, v. 39, n. 6, p. 609, doi. 10.1134/1.1944847
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Specific Features of the Segregation-Related Redistribution of Phosphorus during Thermal Oxidation of Heavily Doped Silicon Layers.
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- Semiconductors, 2005, v. 39, n. 6, p. 615, doi. 10.1134/1.1944848
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- Article
Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys.
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- Semiconductors, 2005, v. 39, n. 6, p. 623, doi. 10.1134/1.1944849
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Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers Using Reflectance Spectra.
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- Semiconductors, 2005, v. 39, n. 6, p. 636, doi. 10.1134/1.1944851
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Energy Parameters of Two-Electron Tin Centers in PbSe.
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- Semiconductors, 2005, v. 39, n. 6, p. 638, doi. 10.1134/1.1944852
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- Article
Dynamic Chaos in a Partially Illuminated Compensated Semiconductor Under the Conditions of Impurity-Related Breakdown.
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- Semiconductors, 2005, v. 39, n. 6, p. 642, doi. 10.1134/1.1944853
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- Article
Modulation of the Characteristics of Intense Picosecond Stimulated Emission from GaAs.
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- Semiconductors, 2005, v. 39, n. 6, p. 650, doi. 10.1134/1.1944854
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Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors.
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- Semiconductors, 2005, v. 39, n. 6, p. 658, doi. 10.1134/1.1944855
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- Article
Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K.
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- Semiconductors, 2005, v. 39, n. 6, p. 661, doi. 10.1134/1.1944856
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- Article
Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator.
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- Semiconductors, 2005, v. 39, n. 6, p. 666, doi. 10.1134/1.1944857
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- Article
Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.
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- Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858
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- Article
The Effect of Adsorbed Molecules on the Charge-Carrier Spectrum in a Semiconductor Nanowire.
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- Semiconductors, 2005, v. 39, n. 6, p. 679, doi. 10.1134/1.1944859
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- Article
Local Tunneling Spectroscopy of Silicon Nanostructures.
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- Semiconductors, 2005, v. 39, n. 6, p. 685, doi. 10.1134/1.1944860
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- Article
Room-Temperature Electroreflectance and Reflectance of a GaAs/AlGaAs Single Quantum Well Structure.
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- Semiconductors, 2005, v. 39, n. 6, p. 697, doi. 10.1134/1.1944861
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- Article
The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.
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- Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862
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- Article
Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition.
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- Semiconductors, 2005, v. 39, n. 6, p. 709, doi. 10.1134/1.1944863
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The Physical Properties of CdTe Doped with V and Ge.
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- Semiconductors, 2005, v. 39, n. 6, p. 712, doi. 10.1134/1.1944864
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- Article
A New Memory Element Based on Silicon Nanoclusters in a ZrO<sub>2</sub> Insulator with a High Permittivity for Electrically Erasable Read-Only Memory.
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- Semiconductors, 2005, v. 39, n. 6, p. 716, doi. 10.1134/1.1944865
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- Article
Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe.
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- Semiconductors, 2005, v. 39, n. 6, p. 722, doi. 10.1134/1.1944866
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A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD.
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- Semiconductors, 2005, v. 39, n. 6, p. 730, doi. 10.1134/1.1944867
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