The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process of Molecular-Beam Epitaxy.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 557, doi. 10.1134/1.1923565
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 5
Results: 22
1
2
The Generation–Recombination Mechanism of Charge Transport in a Thin-Film CdS/CdTe Heterojunction.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 539, doi. 10.1134/1.1923561
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- Publication type:
- Article
3
The Effect of Oxygen on the ZnS Electronic Energy-Band Structure.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 485, doi. 10.1134/1.1923552
- By:
- Publication type:
- Article
4
Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 493, doi. 10.1134/1.1923553
- By:
- Publication type:
- Article
5
The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 499, doi. 10.1134/1.1923554
- By:
- Publication type:
- Article
6
The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 514, doi. 10.1134/1.1923556
- By:
- Publication type:
- Article
7
The Conductivity and Hall Effect in CdF<sub>2</sub>:In and CdF<sub>2</sub>:Y.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 506, doi. 10.1134/1.1923555
- By:
- Publication type:
- Article
8
The Extrinsic Photoconductivity of Chalcogens in Ge<sub>1 – x</sub>Si<sub>x</sub> Solid Solutions.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 521, doi. 10.1134/1.1923557
- By:
- Publication type:
- Article
9
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 523, doi. 10.1134/1.1923558
- By:
- Publication type:
- Article
10
p<sup>+</sup>-Si–n-CdF<sub>2</sub> Heterojunctions.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 528, doi. 10.1134/1.1923559
- By:
- Publication type:
- Article
11
Injection Currents in Narrow-Gap (Pb<sub>1 – x</sub>Sn<sub>x</sub>Te):In Insulators.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 533, doi. 10.1134/1.1923560
- By:
- Publication type:
- Article
12
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 547, doi. 10.1134/1.1923563
- By:
- Publication type:
- Article
13
The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 543, doi. 10.1134/1.1923562
- By:
- Publication type:
- Article
14
The Formation of Silicon Nanocrystals in SiO<sub>2</sub> Layers by the Implantation of Si Ions with Intermediate Heat Treatments.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 552, doi. 10.1134/1.1923564
- By:
- Publication type:
- Article
15
The Electronic and Emissive Properties of Au-Doped Porous Silicon.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 565, doi. 10.1134/1.1923566
- By:
- Publication type:
- Article
16
The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge and Structural Relaxation of a-SiC:H Films.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 572, doi. 10.1134/1.1923567
- By:
- Publication type:
- Article
17
Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors with Submicrometer Grain Sizes.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 577, doi. 10.1134/1.1923568
- By:
- Publication type:
- Article
18
Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 585, doi. 10.1134/1.1923569
- By:
- Publication type:
- Article
19
Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during the Field Ionization of Insulator Atoms.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 591, doi. 10.1134/1.1923570
- By:
- Publication type:
- Article
20
Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 594, doi. 10.1134/1.1923571
- By:
- Publication type:
- Article
21
Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 600, doi. 10.1134/1.1923572
- By:
- Publication type:
- Article
22
The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 603, doi. 10.1134/1.1923573
- By:
- Publication type:
- Article