Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 2

Results: 21

Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 161, doi. 10.1134/1.1864192

By:

Karazhanov, S. Zh.;
Lew Yan Voon, L. C.

Publication type:

Article

Photoreflection Studies of the Dopant Activation in InP Implanted with Be+ Ions.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 174, doi. 10.1134/1.1864193

By:

Avakyants, L. P.;
Bokov, P. Yu.;
Chervyakov, A. V.

Publication type:

Article

The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 177, doi. 10.1134/1.1864194

By:

Gridchin, V. A.;
Lubimskiĩ, V. M.

Publication type:

Article

Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 182, doi. 10.1134/1.1864195

By:

Pokrovski&itlde;, Ya. E.;
Khval'kovskiĨ, N. A.

Publication type:

Article

The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers under Highly Nonequilibrium Conditions.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 189, doi. 10.1134/1.1864196

By:

Belyaev, A. P.;
Rubets, V. P.;
Antipov, V. V.

Publication type:

Article

Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 192, doi. 10.1134/1.1864197

By:

Gridchin, V. A.;
Lyubimski&itlde;, V. M.;
Moiseev, A. G.

Publication type:

Article

The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density in a Surface Superlattice in a Strong Electric Field.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 198, doi. 10.1134/1.1864198

By:

Zav'yalov, D. V.;
Kryuchkov, S. V.;
Meshcheryakova, N. E.

Publication type:

Article

Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se2 Heterojunctions.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 202, doi. 10.1134/1.1864199

By:

Gremenok, V. F.;
Il'chuk, G. A.;
Nikitin, S. E.;
Rud, V. Yu.;
Rud, Yu. V.

Publication type:

Article

The Qualitative Difference between Mechanisms of Electroforming in Si–SiO2–W Structures Based on n-Si and p-Si.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 206, doi. 10.1134/1.1864200

By:

Mordvintsev, V. M.;
Kudryavtsev, S. E.;
Levin, V. L.

Publication type:

Article

Luminescence of Multilayer Structures Based on InAsSb at λ = 6–9 μm.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 214, doi. 10.1134/1.1864201

By:

Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyĩ, M. A.;
Stus, N. M.;
Tarakanova, N. G.

Publication type:

Article

Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas in GaAs/InGaAs/GaAs Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 221, doi. 10.1134/1.1864203

By:

Sherstobitov, A. A.;
Min'kov, G. M.;
Rut, O. E.;
Germanenko, A. V.;
Zvonkov, B. N.

Publication type:

Article

Special Features of the Electron–Electron Interaction in the Potential of a Heavily Doped AlxGa1 – xAs:Si/GaAs Heterojunction.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 226, doi. 10.1134/1.1864204

By:

Kadushkin, V. I.

Publication type:

Article

The Effect of Thickness Fluctuations on the Static Electrical Conductivity of a Semiconductor Quantum Wire.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 231, doi. 10.1134/1.1864205

By:

Ruvinski&icaron;, M. A.;
Ruvinski&icaron;, B. M.

Publication type:

Article

Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 235, doi. 10.1134/1.1864206

By:

Openov, L. A.;
Tsukanov, A. V.

Publication type:

Article

Optical Properties of Porous Nanosized GaAs.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 243, doi. 10.1134/1.1864207

By:

Belogorokhov, A. I.;
Gavrilov, S. A.;
Belogorokhov, I. A.;
Tikhomirov, A. A.

Publication type:

Article

Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208

By:

Sizov, D. S.;
Sizov, V. S.;
Zavarin, E. E.;
Lundin, V. V.;
Fomin, A. V.;
Tsatsul'nikov, A. F.;
Ledentsov, N. N.

Publication type:

Article

Electrical Characteristics of Insulator–Conductor and Insulator–Semiconductor Macrosystems.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 254, doi. 10.1134/1.1864209

By:

Sotskov, V. A.

Publication type:

Article

On the Injection Current Mechanism in Light-Emitting p–i–n Structures Based on a-Si1 – xCx:H Hydrogenated Amorphous Alloys.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 261, doi. 10.1134/1.1864210

By:

Andreev, A. A.

Publication type:

Article

A Graded-Gap Photoelectric Detector for Ionizing Radiation.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 265, doi. 10.1134/1.1864211

By:

Dapkus, L.;
Požela, K.;
Požela, J.;
Šilėnas, A.;
Jucienė, V.;
Jasutis, V.

Publication type:

Article

Ammonia Sensors Based on Pd–n-Si Diodes.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 269, doi. 10.1134/1.1864212

By:

Balyuba, V. I.;
Grisyk, V. Yu.;
Davydova, T. A.;
Kalygina, V. M.;
Nazarov, S. S.;
Khludkova, L. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 2

Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors.

Photoreflection Studies of the Dopant Activation in InP Implanted with Be<sup>+</sup> Ions.

The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si.

Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure.

The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers under Highly Nonequilibrium Conditions.

Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon.

The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density in a Surface Superlattice in a Strong Electric Field.

Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se<sub>2</sub> Heterojunctions.

The Qualitative Difference between Mechanisms of Electroforming in Si–SiO<sub>2</sub>–W Structures Based on n-Si and p-Si.

Luminescence of Multilayer Structures Based on InAsSb at λ = 6–9 μm.

Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.

Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas in GaAs/InGaAs/GaAs Heterostructures.

Special Features of the Electron–Electron Interaction in the Potential of a Heavily Doped Al<sub>x</sub>Ga<sub>1 – x</sub>As:Si/GaAs Heterojunction.

The Effect of Thickness Fluctuations on the Static Electrical Conductivity of a Semiconductor Quantum Wire.

Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse.

Optical Properties of Porous Nanosized GaAs.

Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.

Electrical Characteristics of Insulator–Conductor and Insulator–Semiconductor Macrosystems.

On the Injection Current Mechanism in Light-Emitting p–i–n Structures Based on a-Si<sub>1 – x</sub>C<sub>x</sub>:H Hydrogenated Amorphous Alloys.

A Graded-Gap Photoelectric Detector for Ionizing Radiation.

Ammonia Sensors Based on Pd–n-Si Diodes.