Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 11

Results: 20

Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4μm Mid-Infrared Spectral Range.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1235, doi. 10.1134/1.2128447
By:
- Danilova, T. N.;
- Zhurtanov, B. E.;
- Imenkov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article
Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1267, doi. 10.1134/1.2128448
By:
- Dubrovskiĭ, V. G.;
- Cirlin, G. E.
Publication type:
Article
Hydrogen Desorption from the Surface under the Conditions of Epitaxial Growth of Silicon Layers from Monosilane in Vacuum.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1275, doi. 10.1134/1.2128449
By:
- Orlov, L. K.;
- Smyslova, T. N.
Publication type:
Article
Adsorption, Desorption, and Contact and Thermal Transformation of C<sub>60</sub> Molecules on a Ta(100) Surface.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1280, doi. 10.1134/1.2128450
By:
- Gall', N. R.;
- Ru'kov, E. V.;
- Tontegode, A. Ya.
Publication type:
Article
Applicability of a Simplified Shockley–Read–Hall Model to Semiconductors with Various Types of Defects.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1285, doi. 10.1134/1.2128451
By:
- Yashin, A. N.
Publication type:
Article
Sensitivity of Insulator–Semiconductor Structures to Time-Dependent Light Fluxes.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1290, doi. 10.1134/1.2128452
By:
- Kovtonyuk, N. F.;
- Misnik, V. P.;
- Sokolov, A. V.
Publication type:
Article
Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453
By:
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Ushakova, T. N.
Publication type:
Article
Dynamics of Laser-Induced Phase Transitions in Cadmium Telluride.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1299, doi. 10.1134/1.2128454
By:
- Kovalev, A. A.;
- Zhvavyĭ, S. P.;
- Zykov, G. L.
Publication type:
Article
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Ledentsov, N. N.
Publication type:
Article
Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1308, doi. 10.1134/1.2128456
By:
- Kulbachinskii, V. A.;
- Rogozin, V. A.;
- Lunin, R. A.;
- Belov, A. A.;
- Karuzskiĭ, A. L.;
- Perestoronin, A. V.;
- Zdoroveishchev, A. V.
Publication type:
Article
Interband Light Absorption in Size-Confined Systems in Uniform Electric Fields.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1313, doi. 10.1134/1.2128457
By:
- Sinyavski, É. P.;
- Sokovnich, S. M.;
- Khamidullin, R. A.
Publication type:
Article
Photoluminescence of Silicon Nanocrystals under the Effect of an Electric Field.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1319, doi. 10.1134/1.2128458
By:
- Vandyshev, E. N.;
- Gilinskiĭ, A. M.;
- Shamirzaev, T. S.;
- Zhuravlev, K. S.
Publication type:
Article
Circular Polarization of Luminescence Caused by the Current in Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1323, doi. 10.1134/1.2128459
By:
- Averkiev, N. S.;
- Silov, A. Yu.
Publication type:
Article
Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1352, doi. 10.1134/1.2128465
By:
- Nemcsics, Á.
Publication type:
Article
Luminescence and Electrical Conductivity of Polyamide Acid and Its Metal–Polymer Complexes with La and Tb.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1333, doi. 10.1134/1.2128461
By:
- Lebedev, É. A.;
- Goıkhman, M. Ya.;
- Zhigunov, D. M.;
- Podeshvo, I. V.;
- Kudryavtsev, V. V.;
- Timoshenko, V. Yu.
Publication type:
Article
Effect of the Initial Doping Level on Changes in the Free-Carrier Concentration in Porous Silicon during Ammonia Adsorption.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1338, doi. 10.1134/1.2128462
By:
- Pavlikov, A. V.;
- Osminkina, L. A.;
- Belogorokhov, I. A.;
- Konstantinova, E. A.;
- Efimova, A. I.;
- Timoshenko, V. Yu.;
- Kashkarov, P. K.
Publication type:
Article
Removal of Fluoropolimers from the Surface of Silicon Structures by Treatment in an Atomic Hydrogen Flow.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1342, doi. 10.1134/1.2128463
By:
- Anishchenko, E. V.;
- Kagadeĭ, V. A.;
- Nefedtsev, E. V.;
- Proskurovskiĭ, D. I.;
- Romanenko, S. V.
Publication type:
Article
A New Type of High-Efficiency Bifacial Silicon Solar Cell with External Busbars and a Current-Collecting Wire Grid.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1346, doi. 10.1134/1.2128464
By:
- Untila, G. G.;
- Kost, T. N.;
- Chebotareva, A. B.;
- Zaks, M. B.;
- Sitnikov, A. M.;
- Solodukha, O. I.
Publication type:
Article
Opal–ZnO Nanocomposites: Structure and Emission Properties.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1328, doi. 10.1134/1.2128460
By:
- Emel'chenko, G. A.;
- Gruzintsev, A. N.;
- Koval'chuk, M. N.;
- Masalov, V. M.;
- Samarov, É. N.;
- Yakimov, E. E.;
- Barthou, C.;
- Zver'kova, I. I.
Publication type:
Article
Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiO<sub>x</sub>:H.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1356, doi. 10.1134/1.2128466
By:
- Medvedev, A. V.;
- Feoktistov, N. A.;
- Pevtsov, A. B.;
- Golubev, V. G.
Publication type:
Article