Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 1

Results: 37

Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 1, doi. 10.1134/1.1852631
By:
- Drozdov, Yu.N.;
- Vostokov, N.V.;
- Gaponova, D.M.;
- Danil'tsev, V.M.;
- Drozdov, M.N.;
- Khrykin, O.I.;
- Filimonov, A.S.;
- Shashkin, V.I.
Publication type:
Article
Properties of the GaSb:Mn Layers Deposited from Laser Plasma.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 4, doi. 10.1134/1.1852632
By:
- Danulov, Yu.A.;
- Demidov, E.S.;
- Yu.N.Drozdov;
- Lesnikov, V.P.;
- Podol'skiˇ, V.V.
Publication type:
Article
Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 8, doi. 10.1134/1.1852633
By:
- Danul'tsev, V.M.;
- Gaponova, D.M.;
- Drozdov, M.N.;
- Drozdov, Yu.N.;
- Murel', A.V.;
- Pryakhin, D.A.;
- Khrykin, O.I.;
- Shashkin, V.I.
Publication type:
Article
Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 11, doi. 10.1134/1.1852634
By:
- Pryakhin, D.A.;
- Danul'tsev, V.M.;
- Drozdov, Yu.N.;
- Drozdov, M.N.;
- Gaponova, D.M.;
- Murel', A.V.;
- Shashkin, V.I.;
- Rushworth, S.
Publication type:
Article
Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 14, doi. 10.1134/1.1852635
By:
- Khrykin, O.I.;
- Butin, A.V.;
- Gaponova, D.M.;
- Danil'tsev, V.M.;
- Drozdov, M.N.;
- Drozdov, Yu.N.;
- Murel, A.V.;
- Shashkin, V.I.
Publication type:
Article
Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 17, doi. 10.1134/1.1852636
By:
- Baidus, N.V.;
- Demina, P.B.;
- Dorokhin, M.V.;
- Zvonkov, B.N.;
- Malysheva, E.I.;
- Uskova, E.A.
Publication type:
Article
Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 22, doi. 10.1134/1.1852637
By:
- Aleshkin, V.Ya.;
- Gavrilenko, V.I.;
- D.M.3Gaponova;
- Ikonnikov, A.V.;
- Marem'yanin, K.V.;
- Morozov, S.V.;
- Sadofyev, Yu.G.;
- Johnson, S.R.;
- Zhang, Y.-H.
Publication type:
Article
Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 27, doi. 10.1134/1.1852638
By:
- Shamirzaev, T.S.;
- Gilinski&icaron;, A.M.;
- Bakarov, A.K.;
- Toropov, A.I.;
- Figurenko, S.A.;
- Zhuravlev, K.S.
Publication type:
Article
Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 30, doi. 10.1134/1.1852639
By:
- Murel, A.V.;
- Danil'tsev, V.M.;
- Drozdov, Yu.N.;
- Gaponova, D.M.;
- Shashkin, V.I.;
- Shmagin, V.B.;
- Khrykin, O.I.
Publication type:
Article
A Study of Recombination Centers Related to As–Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 33, doi. 10.1134/1.1852640
By:
- Brunkov, P.N.;
- Gutkin, A.A.;
- Musikhin, Yu.G.;
- Chaldyshev, V.V.;
- Bert, N.N.;
- Konnikov, S.G.;
- PreobrazhenskI&icaron;, V.V.;
- Putyato, M.A.;
- Semyagin, B.R.
Publication type:
Article
Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs/GaAs Quantum Dots.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 37, doi. 10.1134/1.1852641
By:
- Karpovich, I.A.;
- Zdoroveishchev, A.V.;
- Tikhov, S.V.;
- Demina, P.B.;
- Khapugin, O.E.
Publication type:
Article
Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 41, doi. 10.1134/1.1852642
By:
- Vorob'ev, L.E.;
- Panevin, V.Yu.;
- Fedosov, N.K.;
- Firsov, D.A.;
- Shalygin, V.A.;
- Kapaev, V.V.;
- Hanna, S.;
- Schmidt, S.;
- Zibik, E.A.;
- Seilmeier, A.
Publication type:
Article
Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 44, doi. 10.1134/1.1852643
By:
- Antonov, A.V.;
- Gavrilenko, V.I.;
- Demidov, E.V.;
- Zvonkov, B.N.;
- Uskova, E.A.
Publication type:
Article
Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 50, doi. 10.1134/1.1852644
By:
- Vorob'ev, L.E.;
- Panevin, V.Yu.;
- Fedosov, N.K.;
- Firsov, D.A.;
- Shalygin, V.A.;
- Andreev, A.A.;
- Samsonenko, Yu.B.;
- Tonkikh, A.A.;
- Cirlin, G.E.;
- Kryzhanovskaya, N.V.;
- Ustinov, V.M.;
- Hanna, S.;
- Seilmeier, A.;
- Zakharov, N.D.;
- Werner, P.
Publication type:
Article
Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 54, doi. 10.1134/1.1852645
By:
- Aleshkin, V. Ya.;
- Gavrilenko, L. V.
Publication type:
Article
The Effect of the Localization in a Quantum Well on the Lifetime of the States of Shallow Impurity Centers.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 58, doi. 10.1134/1.1852646
By:
- Orlova, E. E.;
- Harrison, P.;
- Zhang, W.-m.;
- Halsall, M. P.
Publication type:
Article
Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 62, doi. 10.1134/1.1852647
By:
- Aleshkin, V. Ya.;
- Gavri1enko, V. I.;
- Ikonnikov, A. V.;
- Sadofyev, Yu. G.;
- Bird, J. P.;
- Johnson, S. R.;
- Y.-h. Zhang
Publication type:
Article
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 67, doi. 10.1134/1.1852648
By:
- Bekin, N. A.;
- Zhukavin, R. Kh.;
- Kovalevskii, K. A.;
- Pavlov, S. G.;
- Zvonkov, B. N.;
- Uskova, E. A.;
- Shastin, V. N.
Publication type:
Article
Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 73, doi. 10.1134/1.1852649
By:
- Andrianov, A. V.;
- Novikov, S. V.;
- Zhuravlev, I. S.;
- T. Li;
- R. Xia;
- Bull, S.;
- Harrison, I.;
- Larkins, E. C.;
- Foxon, C. T.
Publication type:
Article
Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 77, doi. 10.1134/1.1852650
By:
- Vasil'eva, Yu. V.;
- Danulov, Yu. A.;
- Ershov, Ant. A.;
- Zvonkov, B. N.;
- Uskova, E. A.;
- Davydov, A. B.;
- Aronzon, B. A.;
- Gudenko, S. V.;
- Ryl'kov, V. V.;
- Granovsky, A. B.;
- Gan'shina, E. A.;
- Perov, N. S.;
- Vinogradov, A. N.
Publication type:
Article
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 82, doi. 10.1134/1.1852651
By:
- Vostokov, N. V.;
- Gusev, S. A.;
- Danul'tsev, V. M.;
- Drozdov, M. N.;
- Drozdov, Yu. N.;
- Korytin, A. I.;
- Murel, A. V.;
- Shashkin, V. I.
Publication type:
Article
InGaAs/GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 86, doi. 10.1134/1.1852652
By:
- Antonov, A. V.;
- Gaponova, D. M.;
- Danil'tsev, V. M.;
- Drozdov, M. N.;
- Moldavskay, L. D.;
- Murel', A. V.;
- Tulovchikov, V. S.;
- Shashkin, V. I.
Publication type:
Article
Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 89, doi. 10.1134/1.1852653
By:
- Neizvestny, I. G.;
- Suprun, S. P.;
- Shumsky, V. N.
Publication type:
Article
Localization of Holes in an InAs/GaAs Quantum-Dot Molecule.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 119, doi. 10.1134/1.1852659
By:
- Sobolev, M. M.;
- Cirlin, G. E.;
- Samsonenko, Yu. B.;
- Polyakov, N. K.;
- Tonkikh, A. A.;
- Musikhin, Yu. G.
Publication type:
Article
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 100, doi. 10.1134/1.1852655
By:
- Soshnikov, I. P.;
- Ledentsov, N. N.;
- Tsatsul'nikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. A.;
- Fomin, A. V.;
- Litvinov, D.;
- Hahn, E.;
- Gerthsen, D.
Publication type:
Article
Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 103, doi. 10.1134/1.1852656
By:
- Shegai, O. A.;
- Bakarov, A. K.;
- Kalagin, A. K.;
- Toropov, A. I.
Publication type:
Article
Spin Effects in Magnetoresistance Induced in an n-In<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs Double Quantum Well by a Parallel Magnetic Field.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 107, doi. 10.1134/1.1852657
By:
- Yakunin, M. V.;
- Alshanskii, G. A.;
- Arapov, Yu. G.;
- Neverov, V. N.;
- Kharus, G. I.;
- Shelushinina, N. G.;
- Zvonkov, B. N.;
- Uskova, E. A.;
- de Visser, A.;
- Ponomarenko, L.
Publication type:
Article
Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 113, doi. 10.1134/1.1852658
By:
- Morozov, Yu. A.;
- Nefedov, I. S.;
- Aleshkin, V. Ya.;
- Krasnikova, I. V.
Publication type:
Article
Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 95, doi. 10.1134/1.1852654
By:
- Sadofyev, Yu. G.;
- Ramarnoorthy, A.;
- Bird, J. P.;
- Johnson, S. R.;
- Y.-h. Zhang
Publication type:
Article
The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660
By:
- Samsonenko, Yu. B.;
- Cirlin, G. E.;
- Tonkikh, A. A.;
- Polyakov, N. K.;
- Kryzhanovskaya, N. V.;
- Ustinov, V. M.;
- Vorob'ev, L. E.;
- Firsov, D. A.;
- Shalygin, V. A.;
- Zakharov, N. D.;
- Werner, P.;
- Andreev, A.
Publication type:
Article
Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 127, doi. 10.1134/1.1852661
By:
- Valakh, M. Ya.;
- Strelchuk, V. V.;
- Kolomys, A. F.;
- Mazur, Yu. I.;
- Wang, Z. M.;
- Xiao, M.;
- Salamo, G. J.
Publication type:
Article
Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 132, doi. 10.1134/1.1852662
By:
- Danulov, Yu. A.;
- Biryukov, A. A.;
- Goncalves, J. L.;
- Swart, J. W.;
- Likawa, F.;
- Teschke, O.
Publication type:
Article
Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 136, doi. 10.1134/1.1852663
By:
- Lazarouk, S. K.;
- Leshok, A. A.;
- Labunov, V. A.;
- Borisenko, V. E.
Publication type:
Article
Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 139, doi. 10.1134/1.1852664
By:
- Aleshkin, V. Ya.;
- Gavrilenko, V. I.;
- Morozov, S. V.;
- Marem'yanin, K. V.;
- Zvonkov, B. N.;
- Nekorkin, S. M.
Publication type:
Article
The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 142, doi. 10.1134/1.1852665
By:
- Popov, V.V.;
- Tsymbalov, G.M.;
- Shur, M.S.;
- Knap, W.
Publication type:
Article
Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 147, doi. 10.1134/1.1852666
By:
- Romanov, Yu. A.;
- Romanova, Yu. Yu.
Publication type:
Article
The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 156, doi. 10.1134/1.1852667
By:
- Aleshkin, V. Ya.;
- Zvonkov, B. N.;
- Nekorkin, S. M.;
- Kocharovsky, Vi. V.
Publication type:
Article