Works matching IS 10637826 AND DT 2005 AND VI 39 AND IP 1

Results: 37

Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 1, doi. 10.1134/1.1852631

By:

Drozdov, Yu.N.;
Vostokov, N.V.;
Gaponova, D.M.;
Danil'tsev, V.M.;
Drozdov, M.N.;
Khrykin, O.I.;
Filimonov, A.S.;
Shashkin, V.I.

Publication type:

Article

Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal–Quantum-Confined Semiconductor Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 17, doi. 10.1134/1.1852636

By:

Baidus, N.V.;
Demina, P.B.;
Dorokhin, M.V.;
Zvonkov, B.N.;
Malysheva, E.I.;
Uskova, E.A.

Publication type:

Article

Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 22, doi. 10.1134/1.1852637

By:

Aleshkin, V.Ya.;
Gavrilenko, V.I.;
D.M.3Gaponova;
Ikonnikov, A.V.;
Marem'yanin, K.V.;
Morozov, S.V.;
Sadofyev, Yu.G.;
Johnson, S.R.;
Zhang, Y.-H.

Publication type:

Article

Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 27, doi. 10.1134/1.1852638

By:

Shamirzaev, T.S.;
Gilinski&icaron;, A.M.;
Bakarov, A.K.;
Toropov, A.I.;
Figurenko, S.A.;
Zhuravlev, K.S.

Publication type:

Article

Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 30, doi. 10.1134/1.1852639

By:

Murel, A.V.;
Danil'tsev, V.M.;
Drozdov, Yu.N.;
Gaponova, D.M.;
Shashkin, V.I.;
Shmagin, V.B.;
Khrykin, O.I.

Publication type:

Article

A Study of Recombination Centers Related to As–Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 33, doi. 10.1134/1.1852640

By:

Brunkov, P.N.;
Gutkin, A.A.;
Musikhin, Yu.G.;
Chaldyshev, V.V.;
Bert, N.N.;
Konnikov, S.G.;
PreobrazhenskI&icaron;, V.V.;
Putyato, M.A.;
Semyagin, B.R.

Publication type:

Article

Properties of the GaSb:Mn Layers Deposited from Laser Plasma.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 4, doi. 10.1134/1.1852632

By:

Danulov, Yu.A.;
Demidov, E.S.;
Yu.N.Drozdov;
Lesnikov, V.P.;
Podol'skiˇ, V.V.

Publication type:

Article

Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 8, doi. 10.1134/1.1852633

By:

Danul'tsev, V.M.;
Gaponova, D.M.;
Drozdov, M.N.;
Drozdov, Yu.N.;
Murel', A.V.;
Pryakhin, D.A.;
Khrykin, O.I.;
Shashkin, V.I.

Publication type:

Article

Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 11, doi. 10.1134/1.1852634

By:

Pryakhin, D.A.;
Danul'tsev, V.M.;
Drozdov, Yu.N.;
Drozdov, M.N.;
Gaponova, D.M.;
Murel', A.V.;
Shashkin, V.I.;
Rushworth, S.

Publication type:

Article

Features of GaN Growth Attained by Metal–Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 14, doi. 10.1134/1.1852635

By:

Khrykin, O.I.;
Butin, A.V.;
Gaponova, D.M.;
Danil'tsev, V.M.;
Drozdov, M.N.;
Drozdov, Yu.N.;
Murel, A.V.;
Shashkin, V.I.

Publication type:

Article

Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 41, doi. 10.1134/1.1852642

By:

Vorob'ev, L.E.;
Panevin, V.Yu.;
Fedosov, N.K.;
Firsov, D.A.;
Shalygin, V.A.;
Kapaev, V.V.;
Hanna, S.;
Schmidt, S.;
Zibik, E.A.;
Seilmeier, A.

Publication type:

Article

Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs/GaAs Quantum Dots.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 37, doi. 10.1134/1.1852641

By:

Karpovich, I.A.;
Zdoroveishchev, A.V.;
Tikhov, S.V.;
Demina, P.B.;
Khapugin, O.E.

Publication type:

Article

Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 50, doi. 10.1134/1.1852644

By:

Vorob'ev, L.E.;
Panevin, V.Yu.;
Fedosov, N.K.;
Firsov, D.A.;
Shalygin, V.A.;
Andreev, A.A.;
Samsonenko, Yu.B.;
Tonkikh, A.A.;
Cirlin, G.E.;
Kryzhanovskaya, N.V.;
Ustinov, V.M.;
Hanna, S.;
Seilmeier, A.;
Zakharov, N.D.;
Werner, P.

Publication type:

Article

Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 44, doi. 10.1134/1.1852643

By:

Antonov, A.V.;
Gavrilenko, V.I.;
Demidov, E.V.;
Zvonkov, B.N.;
Uskova, E.A.

Publication type:

Article

Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 54, doi. 10.1134/1.1852645

By:

Aleshkin, V. Ya.;
Gavrilenko, L. V.

Publication type:

Article

The Effect of the Localization in a Quantum Well on the Lifetime of the States of Shallow Impurity Centers.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 58, doi. 10.1134/1.1852646

By:

Orlova, E. E.;
Harrison, P.;
Zhang, W.-m.;
Halsall, M. P.

Publication type:

Article

Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 62, doi. 10.1134/1.1852647

By:

Aleshkin, V. Ya.;
Gavri1enko, V. I.;
Ikonnikov, A. V.;
Sadofyev, Yu. G.;
Bird, J. P.;
Johnson, S. R.;
Y.-h. Zhang

Publication type:

Article

Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 67, doi. 10.1134/1.1852648

By:

Bekin, N. A.;
Zhukavin, R. Kh.;
Kovalevskii, K. A.;
Pavlov, S. G.;
Zvonkov, B. N.;
Uskova, E. A.;
Shastin, V. N.

Publication type:

Article

Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 73, doi. 10.1134/1.1852649

By:

Andrianov, A. V.;
Novikov, S. V.;
Zhuravlev, I. S.;
T. Li;
R. Xia;
Bull, S.;
Harrison, I.;
Larkins, E. C.;
Foxon, C. T.

Publication type:

Article

Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 77, doi. 10.1134/1.1852650

By:

Vasil'eva, Yu. V.;
Danulov, Yu. A.;
Ershov, Ant. A.;
Zvonkov, B. N.;
Uskova, E. A.;
Davydov, A. B.;
Aronzon, B. A.;
Gudenko, S. V.;
Ryl'kov, V. V.;
Granovsky, A. B.;
Gan'shina, E. A.;
Perov, N. S.;
Vinogradov, A. N.

Publication type:

Article

A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 82, doi. 10.1134/1.1852651

By:

Vostokov, N. V.;
Gusev, S. A.;
Danul'tsev, V. M.;
Drozdov, M. N.;
Drozdov, Yu. N.;
Korytin, A. I.;
Murel, A. V.;
Shashkin, V. I.

Publication type:

Article

InGaAs/GaAs Quantum Dot Heterostructures for 3–5 μm IR Detectors.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 86, doi. 10.1134/1.1852652

By:

Antonov, A. V.;
Gaponova, D. M.;
Danil'tsev, V. M.;
Drozdov, M. N.;
Moldavskay, L. D.;
Murel', A. V.;
Tulovchikov, V. S.;
Shashkin, V. I.

Publication type:

Article

Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 95, doi. 10.1134/1.1852654

By:

Sadofyev, Yu. G.;
Ramarnoorthy, A.;
Bird, J. P.;
Johnson, S. R.;
Y.-h. Zhang

Publication type:

Article

Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 89, doi. 10.1134/1.1852653

By:

Neizvestny, I. G.;
Suprun, S. P.;
Shumsky, V. N.

Publication type:

Article

Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 100, doi. 10.1134/1.1852655

By:

Soshnikov, I. P.;
Ledentsov, N. N.;
Tsatsul'nikov, A. F.;
Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. A.;
Fomin, A. V.;
Litvinov, D.;
Hahn, E.;
Gerthsen, D.

Publication type:

Article

Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 103, doi. 10.1134/1.1852656

By:

Shegai, O. A.;
Bakarov, A. K.;
Kalagin, A. K.;
Toropov, A. I.

Publication type:

Article

Spin Effects in Magnetoresistance Induced in an n-In<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs Double Quantum Well by a Parallel Magnetic Field.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 107, doi. 10.1134/1.1852657

By:

Yakunin, M. V.;
Alshanskii, G. A.;
Arapov, Yu. G.;
Neverov, V. N.;
Kharus, G. I.;
Shelushinina, N. G.;
Zvonkov, B. N.;
Uskova, E. A.;
de Visser, A.;
Ponomarenko, L.

Publication type:

Article

Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 113, doi. 10.1134/1.1852658

By:

Morozov, Yu. A.;
Nefedov, I. S.;
Aleshkin, V. Ya.;
Krasnikova, I. V.

Publication type:

Article

The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660

By:

Samsonenko, Yu. B.;
Cirlin, G. E.;
Tonkikh, A. A.;
Polyakov, N. K.;
Kryzhanovskaya, N. V.;
Ustinov, V. M.;
Vorob'ev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Zakharov, N. D.;
Werner, P.;
Andreev, A.

Publication type:

Article

Localization of Holes in an InAs/GaAs Quantum-Dot Molecule.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 119, doi. 10.1134/1.1852659

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.;
Musikhin, Yu. G.

Publication type:

Article

Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 132, doi. 10.1134/1.1852662

By:

Danulov, Yu. A.;
Biryukov, A. A.;
Goncalves, J. L.;
Swart, J. W.;
Likawa, F.;
Teschke, O.

Publication type:

Article

Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 127, doi. 10.1134/1.1852661

By:

Valakh, M. Ya.;
Strelchuk, V. V.;
Kolomys, A. F.;
Mazur, Yu. I.;
Wang, Z. M.;
Xiao, M.;
Salamo, G. J.

Publication type:

Article

Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 136, doi. 10.1134/1.1852663

By:

Lazarouk, S. K.;
Leshok, A. A.;
Labunov, V. A.;
Borisenko, V. E.

Publication type:

Article

Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 139, doi. 10.1134/1.1852664

By:

Aleshkin, V. Ya.;
Gavrilenko, V. I.;
Morozov, S. V.;
Marem'yanin, K. V.;
Zvonkov, B. N.;
Nekorkin, S. M.

Publication type:

Article

The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 142, doi. 10.1134/1.1852665

By:

Popov, V.V.;
Tsymbalov, G.M.;
Shur, M.S.;
Knap, W.

Publication type:

Article

Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 147, doi. 10.1134/1.1852666

By:

Romanov, Yu. A.;
Romanova, Yu. Yu.

Publication type:

Article

The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 156, doi. 10.1134/1.1852667

By:

Aleshkin, V. Ya.;
Zvonkov, B. N.;
Nekorkin, S. M.;
Kocharovsky, Vi. V.

Publication type:

Article