Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 9

Results: 25

Certain Features of Ga Diffusion in ZnS Powders.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 987, doi. 10.1134/1.1797471

By:

Bacherikov, Yu. Yu.;
Vorona, I. P.;
Optasyuk, S. V.;
Rodionov, V. E.;
Stadnik, A. A.

Publication type:

Article

Impact-Ionization Autosolitons in Compensated Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 992, doi. 10.1134/1.1797472

By:

Musaev, A. M.

Publication type:

Article

Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 996, doi. 10.1134/1.1797473

By:

Makhni&ibreve;, V. P.;
Sletov, A. M.;
Tkachenko, I. V.

Publication type:

Article

Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 998, doi. 10.1134/1.1797474

By:

Shmidt, N. M.;
Levinshtein, M. E.;
Lundin, W. V.;
Besyul'kin, A. I.;
Kop'ev, P. S.;
Rumyantsev, S. L.;
Pala, N.;
Shur, M. S.

Publication type:

Article

Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1001, doi. 10.1134/1.1797475

By:

Gruzintsev, A. N.;
Red'kin, A. N.;
Tatsii, V. I.;
Barthou, C.;
Benalloul, P.

Publication type:

Article

Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1005, doi. 10.1134/1.1797476

By:

Borodovsk&iitilde;, P. A.;
Buldygin, A. F.;
Tokarev, A. S.

Publication type:

Article

Interfaces and Roughness in a Multilayer Silicon Structure.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1012, doi. 10.1134/1.1797477

By:

Belyaeva, A. I.;
Galuza, A. A.;
Kolomiets, S. N.

Publication type:

Article

Electrical Properties of Metal–Semiconductor Nanocontacts.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1047, doi. 10.1134/1.1797483

By:

Vostokov, N. V.;
Shashkin, V. I.

Publication type:

Article

Interaction of C<sub>60</sub> Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1023, doi. 10.1134/1.1797479

By:

Gall, N. R.;
Rut'kov, E. V.;
Tontegode, A. Ya.

Publication type:

Article

Radiative Recombination in a Silicon MOS Tunnel Structure.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1030, doi. 10.1134/1.1797480

By:

Asli, N.;
Vexler, M. I.;
Grekhov, I. V.;
Seegebrecht, P.;
Tyaginov, S. E.;
Shulekin, A. F.

Publication type:

Article

Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1036, doi. 10.1134/1.1797481

By:

Gurovich, B. A.;
Aronzon, B. A.;
Ryl'kov, V. V.;
Ol'shansk&iitilde;, E. D.;
Kuleshova, E. A.;
Dolg&iitilde;, D. I.;
Kovalev, D. Yu.;
Filippov, V. I.

Publication type:

Article

Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1041, doi. 10.1134/1.1797482

By:

Komarov, B. A.

Publication type:

Article

Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1018, doi. 10.1134/1.1797478

By:

Il'chuk, G. A.;
Klimova, N. V.;
Kon'kov, O. I.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rudaya, L. I.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.;
Shamanin, V. V.;
Yurre, T. A.

Publication type:

Article

Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1053, doi. 10.1134/1.1797484

By:

Zerova, V. L.;
Zegrya, G. G.;
Vorob'ev, L. E.

Publication type:

Article

Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1061, doi. 10.1134/1.1797485

By:

Pozdnyakov, D. V.;
Borzdov, V. M.;
Komarov, F. F.

Publication type:

Article

Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1065, doi. 10.1134/1.1797486

By:

Fedorov, A. V.;
Baranov, A. V.

Publication type:

Article

Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1074, doi. 10.1134/1.1797487

By:

Aleksandrova, E. L.;
Kompan, M. E.;
Dudkina, M. M.;
Tenkovtsev, A. V.;
Terukov, E. I.

Publication type:

Article

Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb<sup>+2</sup>.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1078, doi. 10.1134/1.1797488

By:

Lebedev, É. A.;
Go&ibreve;khman, M. Ya.;
Tséndin, K. D.;
Podeshvo, I. V.;
Terukov, E. I.;
Kudryavtsev, V. V.

Publication type:

Article

Carrier Drift Mobility in Porous Silicon Carbide.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1081, doi. 10.1134/1.1797489

By:

Kazakova, L. P.;
Mynbaeva, M. G.;
Mynbaev, K. D.

Publication type:

Article

Quartz Microtubes Based on Macroporous Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1084, doi. 10.1134/1.1797490

By:

Astrova, E. V.;
Borovinskaya, T. N.;
Perova, T. S.;
Zamoryanskaya, M. V.

Publication type:

Article

Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1088, doi. 10.1134/1.1797491

By:

Astrova, E. V.;
Borovinskaya, T. N.;
Tolmachev, V. A.;
Perova, T. S.

Publication type:

Article

A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1092, doi. 10.1134/1.1797492

By:

Turinov, V. I.

Publication type:

Article

Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1105, doi. 10.1134/1.1797494

By:

Pavel'ev, D. G.;
Demarina, N. V.;
Koshurinov, Yu. I.;
Vasil'ev, A. P.;
Semenova, E. S.;
Zhukov, A. E.;
Ustinov, V. M.

Publication type:

Article

Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1111, doi. 10.1134/1.1797495

By:

Dapkus, L.;
Po&zbreve;ela, K.;
Po&zbreve;ela, J.;
Cilenas, A.;
Juciene, V.;
Jasutis, V.

Publication type:

Article

Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1099, doi. 10.1134/1.1797493

By:

Sedova, I. V.;
Sorokin, S. V.;
Toropov, A. A.;
Kaigorodov, V. A.;
Ivanov, S. V.;
Kop'ev, P. S.;
Lutsenko, E. V.;
Pavlovskii, V. N.;
Zubelevich, V. Z.;
Gurskii, A. L.;
Yablonskii, G. P.;
Dikrne, Y.;
Kalisch, H.;
Szyrnakowski, A.;
Jansen, R. H.;
Schineller, B.;
Heuken, M.

Publication type:

Article