Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 7

Results: 24

Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 758, doi. 10.1134/1.1777595

By:

Neustroev, E.P.;
Smagulova, S.A.;
Antonova, I.V.;
Safronov, L.N.

Publication type:

Article

The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr2Se4.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 763, doi. 10.1134/1.1777596

By:

Abdullaev, A.A.

Publication type:

Article

Interphase Interactions and Features of Structural Relaxation in TiBx–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 737, doi. 10.1134/1.1777591

By:

Boltovets, N.S.;
Ivanov, V.N.;
Konakova, R.V.;
Kudrik, Ya. Ya.;
Litvin, O.S.;
Litvin, P.M.;
Milenin, V.V.

Publication type:

Article

Local Symmetry of the Pb1 – xSnxSe Lattice near the Zero-Gap State.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 742, doi. 10.1134/1.1777592

By:

Khuzhakulov, E.S.

Publication type:

Article

Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 745, doi. 10.1134/1.1777593

By:

Kozlovski&icaron;, V.V.;
Ivanov, P.A.;
Rumyantsev, D.S.;
Lomasov, V.N.;
Samsonova, T.P.

Publication type:

Article

Study of the Electrical Properties of CdxHg1 – xTe.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 751, doi. 10.1134/1.1777594

By:

Biryulin, P.V.;
Kosheleva, V.I.;
Turinov, V.I.

Publication type:

Article

Leakage Currents over the Surface of CdHgTe-Based Photodiodes.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 855, doi. 10.1134/1.1777614

By:

Biryulin, P.V.;
Turinov, V.I.;
Yakimov, E.B.

Publication type:

Article

Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 769, doi. 10.1134/1.1777597

By:

Brudny&icaron;, V.N.;
Bo&icaron;ko, V.M.;
Kamenskaya, I.V.;
Kolin, N.G.

Publication type:

Article

Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 775, doi. 10.1134/1.1777598

By:

Tetelbaum, D.I.;
Zorin, E.I.;
Lisenkova, N.V.

Publication type:

Article

Specific Thermoelectric Properties of Lightly Doped Bi2(TeSe)3 Solid Solutions.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 778, doi. 10.1134/1.1777599

By:

Konstantinov, P.P.;
Prokof'eva, L.V.;
Ravich, Yu I.;
Fedorov, M.I.;
Kompaniets, V.V.

Publication type:

Article

Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 782, doi. 10.1134/1.1777600

By:

Veínger, A.I.;
Zabrodski&icaron;, A.G.;
Tisnek, T.V.;
Mokhov, E.N.

Publication type:

Article

Localization of a Longitudinal Autosoliton in InSb.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 788, doi. 10.1134/1.1777601

By:

Kamilov, I.K.;
Stepurenko, A.A.;
Kovalev, A.S.

Publication type:

Article

Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 791, doi. 10.1134/1.1777602

By:

Gutkin, A.A.;
Reshchikov, M.A.

Publication type:

Article

Hysteresis in Ag2Te near and within the Phase Transition Region.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 796, doi. 10.1134/1.1777603

By:

Aliev, S.A.

Publication type:

Article

Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 800, doi. 10.1134/1.1777604

By:

Murel, A.V.;
Obolenski&icaron, S.V.;
Fefelov, A.F.;
Kiseleva, E.V.

Publication type:

Article

Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 807, doi. 10.1134/1.1777605

By:

Strokan, N.B.;
Ivanov, A.M.;
Savkina, N.S.;
Lebedev, A.A.;
Kozlovski&icaron;, V.V.;
Syvajarvi, M.;
Yakimova, R.

Publication type:

Article

Nonlinear Properties of Phototropic Media on the Basis of CuxSe Nanoparticles in Quartz Glass.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 812, doi. 10.1134/1.1777606

By:

Zolotovskaya, S.A.;
Posnov, N.N.;
Prokosin, P.V.;
Yumashev, K.V.;
Gurin, V.S.;
Alexeenko, A.A.

Publication type:

Article

Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 818, doi. 10.1134/1.1777607

By:

Tyschenko, I.E.;
Rebohle, L.

Publication type:

Article

The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/AlxGa1 – xAs Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 824, doi. 10.1134/1.1777608

By:

Borisenko, S.I.

Publication type:

Article

Kapitsa Effect in Crystals with Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 830, doi. 10.1134/1.1777609

By:

Gorski&icaron;, P.V.

Publication type:

Article

Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 833, doi. 10.1134/1.1777610

By:

Kryzhanovskaya, N.V.;
Gladyschev, A.G.;
Blokhin, S.A.;
Musikhin, Yu G.;
Zhukov, A.E.;
Maksimov, M.V.;
Zakharov, N.D.;
Tatsul'nikov, A.F.;
Ledentsov, N.N.;
Werner, P.;
Guffart, F.;
Bimberg, D.

Publication type:

Article

Mechanism of Dicke Superradiance in Semiconductor Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 837, doi. 10.1134/1.1777611

By:

Karachinsky, L. Ya.;
Novikov, I.I.;
Gordeev, N. Yu.;
Zegrya, G.G.

Publication type:

Article

Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 842, doi. 10.1134/1.1777612

By:

Sachenko, A.V.;
Kryuchenko, Yu V.;
Sokolovski&icaron;, I.O.;
Sreseli, O.M.

Publication type:

Article

Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 849, doi. 10.1134/1.1777613

By:

Masalov, V.M.;
Samarov, É.N.;
Volkodav, G.I.;
Emel'chenko, G.A.;
Bazhenov, A.V.;
Bozhko, S.I.;
Karpov, I.A.;
Gruzintsev, A.N.;
Yakimov, E.E.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 7

Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C.

The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr<sub>2</sub>Se<sub>4</sub>.

Interphase Interactions and Features of Structural Relaxation in TiB<sub>x</sub>–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment.

Local Symmetry of the Pb<sub>1 – x</sub>Sn<sub>x</sub>Se Lattice near the Zero-Gap State.

Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons.

Study of the Electrical Properties of Cd<sub>x</sub>Hg<sub>1 – x</sub>Te.

Leakage Currents over the Surface of CdHgTe-Based Photodiodes.

Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons.

Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon.

Specific Thermoelectric Properties of Lightly Doped Bi<sub>2</sub>(TeSe)<sub>3</sub> Solid Solutions.

Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines.

Localization of a Longitudinal Autosoliton in InSb.

Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV.

Hysteresis in Ag<sub>2</sub>Te near and within the Phase Transition Region.

Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation.

Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons.

Nonlinear Properties of Phototropic Media on the Basis of Cu<sub>x</sub>Se Nanoparticles in Quartz Glass.

Radiative Recombination in Ge<sup>+</sup>-Implanted SiO<sub>2</sub> Films Annealed under Hydrostatic Pressure.

The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/Al<sub>x</sub>Ga<sub>1 – x</sub>As Superlattices.

Kapitsa Effect in Crystals with Superlattices.

Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an In<sub>x</sub>Ga<sub>1 – x</sub>As Matrix on a GaAs Substrate.

Mechanism of Dicke Superradiance in Semiconductor Heterostructures.

Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures.

Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix.