Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 5

Results: 27

Vertical Transport of Hot Electrons in GaAs/AlAs Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 576, doi. 10.1134/1.1755895

By:

Mirlin, D. N.;
Sapega, V. F.;
Ustinov, V. M.

Publication type:

Article

Kinetics of Electroluminescence in an Efficient Silicon Light-Emitting Diode with Thermally Stable Spectral Characteristics.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 610, doi. 10.1134/1.1755902

By:

Emel'yanov, A. M.;
Nikolaev, Yu A.;
Sobolev, A. A.;
Mel'nikova, T. M.

Publication type:

Article

Dependence of Dicarbon Annealing Temperature in n-Si on Oxygen Concentration in the Crystal.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 495, doi. 10.1134/1.1755876

By:

Boyarkina, N. I.;
Smagulova, S. A.

Publication type:

Article

Equilibrium Characteristics and Low-Temperature Photoluminescence of CdTe:Pb Single Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 499, doi. 10.1134/1.1755877

By:

Savitsky, A. V.;
Parfenyuk, O. A.;
Ilashchuk, M. I.;
Savchuk, A. &Icaron;.;
Chupyra, S. N.

Publication type:

Article

Interaction of Infrared Radiation with Free Carriers in Mesoporous Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 581, doi. 10.1134/1.1755896

By:

Osminkina, L. A.;
Kurepina, E. V.;
Pavlikov, A. V.;
Timoshenko, V. Yu;
Kashkarov, P. K.

Publication type:

Article

Electrical Properties of Layered FeGaInS4 Single Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 505, doi. 10.1134/1.1755878

By:

Niftiev, N. N.

Publication type:

Article

ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 598, doi. 10.1134/1.1755899

By:

Bratus, V. Ya;
Okulov, S. M.;
Kagonovich, É. B.;
Kizyak, I. M.;
Manoilov, É. G.

Publication type:

Article

Features of Thermal Radiation of Plane-Parallel Semiconductor Wafers.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 507, doi. 10.1134/1.1755879

By:

Guga, K. Yu;
Kollyukh, A. G.;
Liptuga, A. I.;
Morozhenko, V. A.;
Pipa, V. I.

Publication type:

Article

Nonlinear Absorption of Light by Zn0.37Cd0.63Se Solid Solutions.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 512, doi. 10.1134/1.1755880

By:

Ba&icaron;dullaeva, A.;
Vlasenko, A. I.;
Mozol', P. E.;
Shcherbonos, L. F.

Publication type:

Article

Mobility of Minority Charge Carriers in p-HgCdTe Films.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 514, doi. 10.1134/1.1755881

By:

Varavin, V. S.;
Dvoretsk&icaron;, S. A.;
Kostyuchenko, V. Ya;
Ovsyuk, V. N.;
Protasov, D. Yu

Publication type:

Article

Optical Properties of Synthetic Diamond Single Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 520, doi. 10.1134/1.1755882

By:

Mudry&icaron;, A. V.;
Larionova, T. P.;
Shakin, I. A.;
Gusakov, G. A.;
Dubrov, G. A.;
Tikhonov, V. V.

Publication type:

Article

Phase Conjugation on the Surface of Optically Excited ZnO.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 524, doi. 10.1134/1.1755883

By:

Gruzintsev, A. N.;
Volkov, V. T.

Publication type:

Article

Paramagnetic Structural Defects and Conductivity in Hydrogenated Nanocrystalline Carbon-Doped Silicon Films.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 528, doi. 10.1134/1.1755884

By:

Shevaleevskii, O. I.;
Tsvetkov, A. A.;
Larina, L. L.;
Myong, S. Y.;
Lim, K. S.

Publication type:

Article

Electrical Properties of MnIn2Se4.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 531, doi. 10.1134/1.1755885

By:

Niftiev, N. N.;
Alidzhanov, M. A.;
Tagiev, O. B.;
Mamedov, F. M.;
Muradov, M. B.

Publication type:

Article

Plasmon–Phonon–Polaritons in p-Doped Bi–Sb Alloys.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 533, doi. 10.1134/1.1755886

By:

Stepanov, N. P.

Publication type:

Article

MOCVD Growth and Mg-Doping of InAs Layers.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 537, doi. 10.1134/1.1755887

By:

Voronina, T. I.;
Lagunova, T. S.;
Kizhayev, S. S.;
Molchanov, S. S.;
Pushny&icaron;, B. V.;
Yakovlev, Yu P.

Publication type:

Article

Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 543, doi. 10.1134/1.1755888

By:

Glinchuk, K. D.;
Litovchenko, N. M.;
Strilchuk, O. N.

Publication type:

Article

Variation in the Built-in Potential of a Photodiode Based on an n-InSe–p-GaSe Heterojunction in the Course of Aging.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 546, doi. 10.1134/1.1755889

By:

Drapak, S. I.;
Orletskii, V. B.;
Kovalyuk, Z. D.

Publication type:

Article

On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 550, doi. 10.1134/1.1755890

By:

Sachenko, A. V.;
Gorban', A. P.;
Kostylyov, V. P.

Publication type:

Article

Theory of Tunneling Current in Metal–Semiconductor Contacts with Subsurface Isotype δ-Doping.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 554, doi. 10.1134/1.1755891

By:

Shashkin, V. I.;
Murel, A. V.

Publication type:

Article

Geometric Structure and Spectral Characteristics of Electronic States in Silicon Nanoparticles.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 560, doi. 10.1134/1.1755892

By:

Kurganski&icaron;, S. I.;
Borsch, N. A.

Publication type:

Article

Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 565, doi. 10.1134/1.1755893

By:

Agekyan, V. F.;
Stepanov, Yu A.;
Akai, I.;
Karasava, T.;
Vorob'ev, L. E.;
Firsov, D. A.;
Zhukov, A. E.;
Ustinov, V. M.;
A. Zeilmeyer;
Shmidt, S.;
Hanna, S.;
Zibik, E.

Publication type:

Article

Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 572, doi. 10.1134/1.1755894

By:

Parkhomenko, Yu N.;
Belogorovhov, A. I.;
Gerasimenko, N. N.;
Irzhak, A. V.;
Lisachenko, M. G.

Publication type:

Article

Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 603, doi. 10.1134/1.1755900

By:

Forsh, P. A.;
Osminkina, L. A.;
Timoshenko, V. Yu;
Kashkarov, P. K.

Publication type:

Article

Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 607, doi. 10.1134/1.1755901

By:

Odnoblyudov, V. A.;
Egorov, A. Yu;
Kulagina, M. M.;
Maleev, N. A.;
Shernyakov, Yu M.;
Nikitina, E. V.;
Ustinov, V. M.

Publication type:

Article

Photoconductivity of Polymer Compositions with a High Content of Organic Dyes.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 588, doi. 10.1134/1.1755897

By:

Davidenko, N. A.;
Ishchenko, A. A.;
Kostenko, L. I.;
Kuvshinsky, N. G.;
Mysyk, D. D.;
Mysyk, R. D.

Publication type:

Article

Tensoresistive Effect in Porous Silicon Layers with Different Morphology.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 594, doi. 10.1134/1.1755898

By:

Zimin, S. P.;
Bragin, A. N.

Publication type:

Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 5

Vertical Transport of Hot Electrons in GaAs/AlAs Superlattices.

Kinetics of Electroluminescence in an Efficient Silicon Light-Emitting Diode with Thermally Stable Spectral Characteristics.

Dependence of Dicarbon Annealing Temperature in n-Si on Oxygen Concentration in the Crystal.

Equilibrium Characteristics and Low-Temperature Photoluminescence of CdTe:Pb Single Crystals.

Interaction of Infrared Radiation with Free Carriers in Mesoporous Silicon.

Electrical Properties of Layered FeGaInS<sub>4</sub> Single Crystals.

ESR Studies of Nanocrystalline Silicon Films Obtained by Pulsed Laser Ablation of Silicon Targets.

Features of Thermal Radiation of Plane-Parallel Semiconductor Wafers.

Nonlinear Absorption of Light by Zn<sub>0.37</sub>Cd<sub>0.63</sub>Se Solid Solutions.

Mobility of Minority Charge Carriers in p-HgCdTe Films.

Optical Properties of Synthetic Diamond Single Crystals.

Phase Conjugation on the Surface of Optically Excited ZnO.

Paramagnetic Structural Defects and Conductivity in Hydrogenated Nanocrystalline Carbon-Doped Silicon Films.

Electrical Properties of MnIn<sub>2</sub>Se<sub>4</sub>.

Plasmon–Phonon–Polaritons in p-Doped Bi–Sb Alloys.

MOCVD Growth and Mg-Doping of InAs Layers.

Coefficients of Capture of Free Excitons by Shallow Acceptors and Donors in Gallium Arsenide.

Variation in the Built-in Potential of a Photodiode Based on an n-InSe–p-GaSe Heterojunction in the Course of Aging.

On the Ultimate Quantum Efficiency of Band-Edge Electroluminescence in Silicon Barrier Structures.

Theory of Tunneling Current in Metal–Semiconductor Contacts with Subsurface Isotype δ-Doping.

Geometric Structure and Spectral Characteristics of Electronic States in Silicon Nanoparticles.

Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures.

Properties of Self-Organized SiGe Nanostructures Formed by Ion Implantation.

Specific Features of Electrical Transport in Anisotropically Nanostructured Silicon.

Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.

Photoconductivity of Polymer Compositions with a High Content of Organic Dyes.

Tensoresistive Effect in Porous Silicon Layers with Different Morphology.