Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 4

Results: 20

A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 369, doi. 10.1134/1.1734660
By:
- Petukhov, B. V.
Publication type:
Article
Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 376, doi. 10.1134/1.1734661
By:
- Orlov, A. M.;
- Skvortsov, A. A.;
- Salanov, A. A.
Publication type:
Article
Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 380, doi. 10.1134/1.1734662
By:
- Sermakasheva, N. L.;
- Novikov, G. F.;
- Shul'ga, Yu. M.;
- Semenov, V. N.
Publication type:
Article
Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 387, doi. 10.1134/1.1734663
By:
- Brunkov, P. N.;
- Gutkin, A. A.;
- Moiseenko, A. K.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.;
- Cherkashin, N. N.;
- Konnikov, S. G.;
- Preobrazhenski&icaron;, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 393, doi. 10.1134/1.1734664
By:
- Nikitin, S. E.;
- Nikolaev, Yu A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.;
- Fernelius, N.;
- Goldstein, J.
Publication type:
Article
Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 397, doi. 10.1134/1.1734665
By:
- Kadushkin, V. I.
Publication type:
Article
Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 402, doi. 10.1134/1.1734666
By:
- Katerinchuk, V. N.;
- Kovalyuk, Z. D.
Publication type:
Article
Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 451, doi. 10.1134/1.1734673
By:
- Brunkov, P. N.;
- Usov, S. O.;
- Musikhin, Yu G.;
- Zhukov, A. E.;
- Cirlin, G. E.;
- Ustinov, V. M.;
- Konnikov, S. G.;
- Rasulova, G. K.
Publication type:
Article
Electrical Properties of Fine-Grained Polycrystalline CdTe.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 455, doi. 10.1134/1.1734674
By:
- Kolosov, S. A.;
- Klevkov, Yu. V.;
- Plotnikov, A. F.
Publication type:
Article
Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 461, doi. 10.1134/1.1734675
By:
- Sachenko, A. A.;
- Korbutyak, D. V.;
- Kryuchenko, Yu. V.;
- Sreseli, O. M.
Publication type:
Article
A Small-Molecule Organic Semiconductor.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 468, doi. 10.1134/1.1734676
By:
- Yakuphanoglu, F.;
- Aydin, M.;
- Arsu, N.;
- Sekerci, M.
Publication type:
Article
Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 472, doi. 10.1134/1.1734677
By:
- Verbitskaya, E. M.;
- Eremin, V. K.;
- Ivanov, A. M.;
- Strokan, N. B.;
- Vasil'ev, V. I.;
- Gavrin, V. N.;
- Veretenkin, E. P.;
- Kozlova, Yu. P.;
- Kulikov, V. B.;
- Markov, A. V.;
- Polyakov, A. Ya.
Publication type:
Article
Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 406, doi. 10.1134/1.1734667
By:
- Va&icaron;polin, A. A.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 410, doi. 10.1134/1.1734668
By:
- Glukhov, K. E.;
- Bercha, A. I.;
- Korbutyak, D. V.;
- Litovchenko, V. G.
Publication type:
Article
Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669
By:
- Khanin, Yu. N.;
- Vdovin, E. E.;
- Dubrovski&icaron;, Yu. V.
Publication type:
Article
Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
By:
- Karpovich, I. A.;
- Levichev, B. N.;
- Levichev, S. B.;
- Baidus, N. V.;
- Tikhov, S. V.;
- Filatov, D. O.;
- Gorshkov, A. P.;
- Ermakov, S. Yu.
Publication type:
Article
Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 437, doi. 10.1134/1.1734671
By:
- Khabarov, Yu. V.;
- Kapaev, V. V.;
- Petrov, V. A.
Publication type:
Article
A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1–x Quantum Dots.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 447, doi. 10.1134/1.1734672
By:
- Kunets, V. P.;
- Kulish, N. R.;
- Lisitsa, M. P.;
- Bryksa, V. P.
Publication type:
Article
Investigation of Characteristics of InSb-Based Photodiode Linear Arrays.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 480, doi. 10.1134/1.1734678
By:
- Biryulin, P. V.;
- Turinov, V. I.;
- Yakimov, E. B.
Publication type:
Article
Thermal Calculation of SiC p–i–n Diodes.
Published in:
Semiconductors, 2004, v. 38, n. 4, p. 486, doi. 10.1134/1.1734679
By:
- Gamuletskaya, P. B.;
- Kirillov, A. V.;
- Lebedev, A. A.;
- Romanov, L. P.;
- Smirnov, V. A.
Publication type:
Article

Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 4

A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals.

Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions.

Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds.

Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs.

Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions.

Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum.

Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics.

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

Electrical Properties of Fine-Grained Polycrystalline CdTe.

Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon.

A Small-Molecule Organic Semiconductor.

Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.

Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium.

Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)<sub>N</sub>/(AlAs)<sub>M</sub> Superlattices: The Effect of the Boundary Conditions.

Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.

Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.

Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells.

A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdS<sub>x</sub>Se<sub>1–</sub><sub>x</sub> Quantum Dots.

Investigation of Characteristics of InSb-Based Photodiode Linear Arrays.

Thermal Calculation of SiC p–i–n Diodes.