Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 277, doi. 10.1134/1.1682326
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2004 AND VI 38 AND IP 3
Results: 25
1
2
Native Disorder Potential at the Surface of a Heavily Doped Semiconductor.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 319, doi. 10.1134/1.1682336
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- Publication type:
- Article
3
Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized Regions of Semiconductor.
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- Semiconductors, 2004, v. 38, n. 3, p. 245, doi. 10.1134/1.1682319
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- Publication type:
- Article
4
Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing.
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- Semiconductors, 2004, v. 38, n. 3, p. 253, doi. 10.1134/1.1682321
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- Publication type:
- Article
5
Simulation of the Concentration Dependence of Boron Diffusion in Silicon.
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- Semiconductors, 2004, v. 38, n. 3, p. 258, doi. 10.1134/1.1682322
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- Publication type:
- Article
6
Chromium Diffusion in Gallium Arsenide.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 262, doi. 10.1134/1.1682323
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- Publication type:
- Article
7
Special Features of Sb[sub 2] and Sb[sub 4] Incorporation in MBE-Grown AlGaAsSb Alloys.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 266, doi. 10.1134/1.1682324
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- Publication type:
- Article
8
Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity.
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- Semiconductors, 2004, v. 38, n. 3, p. 273, doi. 10.1134/1.1682325
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- Publication type:
- Article
9
Spectral Line Broadening in Quantum Wells due to the Coulomb Interaction of Carriers.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 322, doi. 10.1134/1.1682337
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- Publication type:
- Article
10
Impedance of Solid Solutions Based on Gallium-Doped Lead Telluride.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 281, doi. 10.1134/1.1682327
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- Publication type:
- Article
11
Role of Space Charge in the Resistance Formation in a Bipolar Semiconductor Sample.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 284, doi. 10.1134/1.1682328
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- Publication type:
- Article
12
Magnetic Investigations of Cd[sub 1 – x]Zn[sub x]Te(x = 0.12, 0.21) Wide-Gap Semiconductors.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 288, doi. 10.1134/1.1682329
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- Publication type:
- Article
13
Transport Phenomena in Coarse-Grain CdTe Polycrystals.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 293, doi. 10.1134/1.1682330
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- Publication type:
- Article
14
A Critical Analysis of Investigation of Deep Levels in High-Resistivity CdS Single Crystals by Photoelectric Transient Spectroscopy.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 298, doi. 10.1134/1.1682331
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- Publication type:
- Article
15
The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 304, doi. 10.1134/1.1682332
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- Publication type:
- Article
16
Optical Properties of Polycrystalline Zinc Selenide.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 310, doi. 10.1134/1.1682334
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- Publication type:
- Article
17
Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge[sup +] Ions.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 313, doi. 10.1134/1.1682335
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- Publication type:
- Article
18
Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 329, doi. 10.1134/1.1682338
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- Publication type:
- Article
19
Quantum Confined Stark Effect and Electroabsorption in Semiconductor Spherical Layers.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 335, doi. 10.1134/1.1682339
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- Publication type:
- Article
20
Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 340, doi. 10.1134/1.1682340
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- Publication type:
- Article
21
Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 344, doi. 10.1134/1.1682341
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- Publication type:
- Article
22
Temperature Dependence of Electroluminescence of Er Ions in Tunnel Diodes Based on (111)Si:(Er, O).
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 347, doi. 10.1134/1.1682612
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- Publication type:
- Article
23
Blue–Green Radiation in GaAs-Based Quantum-Well Lasers.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 352, doi. 10.1134/1.1682613
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- Publication type:
- Article
24
GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 355, doi. 10.1134/1.1682614
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- Publication type:
- Article
25
Internal Optical Loss in Semiconductor Lasers.
- Published in:
- Semiconductors, 2004, v. 38, n. 3, p. 360, doi. 10.1134/1.1682615
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- Publication type:
- Article