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Results: 23

Photosensitive Structures Based on HgGa2S4 Single Crystals: Preparation and Properties.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1291, doi. 10.1134/1.1823061
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Ba&icaron;ramov, B. Kh.;
- Il'chuk, G. A.;
- Ukrainets, V. O.;
- Fernelius, N.;
- Shunemann, P. G.
Publication type:
Article
A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1263, doi. 10.1134/1.1823056
By:
- Bibilashvili, A. P.;
- Gerasimov, A. B.
Publication type:
Article
The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1304, doi. 10.1134/1.1823064
By:
- Parchinski&icaron;, P. B.;
- Vlasov, S. I.;
- Nasirov, A. A.
Publication type:
Article
Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO2 Thermal Oxide Using Selective Etching.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1254, doi. 10.1134/1.1823054
By:
- Dunaevski&icaron;, M. S.;
- Grob, J. J.;
- Zabrodski&icaron;, A. G.;
- Laiho, R.;
- Titkov, A. N.
Publication type:
Article
Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1241, doi. 10.1134/1.1823052
By:
- Zavodinsky, V. G.;
- Gnidenko, A. A.;
- Misiuk, A.;
- Bak-Misiuk, J.
Publication type:
Article
(IV2)1 – x(III–V)x Solid Solutions Obtained from a Bounded Tin Melt–Solution.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1245, doi. 10.1134/1.1823053
By:
- Sapaev, B.;
- Saidov, M. S.;
- Saidov, A. S.;
- Karazhanov, S. Zh.
Publication type:
Article
On the High-Dose Effect in the Case of Ion Implantation of Silicon.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1260, doi. 10.1134/1.1823055
By:
- Tetelbaum, D. I.;
- Gerasimov, A. I.
Publication type:
Article
The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1302, doi. 10.1134/1.1823063
By:
- Gadzhialiev, M. M.;
- Pirmagomedov, Z. Sh.;
- Éfendieva, T. N.
Publication type:
Article
Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057
By:
- Krivolapchuk, V. V.;
- Kozhanova, Yu. V.;
- Lundin, V. V.;
- Mezdrogina, M. M.;
- Rodin, S. N.;
- Yusupova, Sh. A.
Publication type:
Article
Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1275, doi. 10.1134/1.1823058
By:
- Kuchakova, T. A.;
- Vesna, G. V.;
- Makara, V. A.
Publication type:
Article
A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1284, doi. 10.1134/1.1823060
By:
- Aleksandrova, E. L.;
- Dudkina, M. M.;
- Ten'kovtsev, A. V.
Publication type:
Article
Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu+ and Ru2+.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1280, doi. 10.1134/1.1823059
By:
- Aleksandrova, E. L.;
- Khimich, N. N.
Publication type:
Article
Photoelectric Properties of ZnO/CuPc/Si Structures.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065
By:
- Il'chuk, G. A.;
- Nikitin, S. E.;
- Nikolaev, Yu. A.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1344, doi. 10.1134/1.1823072
By:
- Konstantinova, E.A.;
- Ryabchikov, Yu.V.;
- Osminkina, L.A.;
- Vorontsov, A.S.;
- Kashkarov, P.K.
Publication type:
Article
Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge33As12Se55–Sb Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1298, doi. 10.1134/1.1823062
By:
- Kondrat, A. B.;
- Popovich, N. I.;
- Dovgoshej, N. I.
Publication type:
Article
Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1316, doi. 10.1134/1.1823067
By:
- Vedernikov, A. I.;
- Chaplik, A. V.
Publication type:
Article
Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069
By:
- Galiev, G. B.;
- Kaminski&icaron;, V. É;
- Vasil'evskií, I. S.;
- Kul'bachinskií, V. A.;
- Lunin, R. A.
Publication type:
Article
Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1332, doi. 10.1134/1.1823070
By:
- Bozhevolnov, V. B.;
- Yafyasov, A. M.;
- Konorov, P. P.
Publication type:
Article
Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1312, doi. 10.1134/1.1823066
By:
- Mityagin, Yu. A.;
- Murzin, V. N.;
- Efimov, Yu. A.;
- Pishchulin, A. A.;
- Pyrkov, V. N.
Publication type:
Article
Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1340, doi. 10.1134/1.1823071
By:
- Tsukanov, A. V.
Publication type:
Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
By:
- Lundin, V. V.;
- Zavarin, E. E.;
- Besulkin, A. I.;
- Gladyshev, A. G.;
- Sakharov, A. V.;
- Kokorev, M. F.;
- Shmidt, N. M.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Kakanakov, R.
Publication type:
Article
Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1350, doi. 10.1134/1.1823073
By:
- Morozov, Yu. A.;
- Nefedov, I. S.;
- Aleshkin, V. Ya.
Publication type:
Article
Properties of GaSb-Based LEDs with Grid Ohmic Contacts.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1356, doi. 10.1134/1.1823074
By:
- Imenkov, A.N.;
- Grebenshchikova, E.A.;
- Zhurtanov, B.E.;
- Danilova, T.N.;
- Sipovskaya, M.A.;
- Vlasenko, N.V.;
- Yakovlev, Yu.P.
Publication type:
Article

Photosensitive Structures Based on HgGa<sub>2</sub>S<sub>4</sub> Single Crystals: Preparation and Properties.

A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.

The Effect of γ-Ray Radiation on the Characteristics of the Interface between Silicon and Lead–Borosilicate Glass.

Atomic-Force-Microscopy Visualization of Si Nanocrystals in SiO<sub>2</sub> Thermal Oxide Using Selective Etching.

Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon.

(IV<sub>2</sub>)<sub>1 – x</sub>(III–V)<sub>x</sub> Solid Solutions Obtained from a Bounded Tin Melt–Solution.

On the High-Dose Effect in the Case of Ion Implantation of Silicon.

The Effect of a Thermoelectric Field on a Current–Voltage Characteristic of the p-Ge–n-GaAs Heterojunction.

Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.

Effect of Proton Radiation on the Kinetics of Phosphorescence Decay in the Ceramic Material ZnS–Cu.

A Mechanism of Charge-Carrier Photogeneration in Polyamidine Supramolecular Structures.

Photosensitivity of Thin Films of Semiconductor Nanocomposites Based on Metal–Organic Complexes with Cu<sup>+</sup> and Ru<sup>2+</sup>.

Photoelectric Properties of ZnO/CuPc/Si Structures.

Effect of Adsorption of the Donor and Acceptor Molecules at the Surface of Porous Silicon on the Recombination Properties of Silicon Nanocrystals.

Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb–n-Si–Bi–Ge<sub>33</sub>As<sub>12</sub>Se<sub>55</sub>–Sb Heterostructures.

Vibration Modes and Electron-Phonon Interaction in Semiconductor Nanotubes.

Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.

Formation of Two- and One-Dimensional Solid-Phase Quantum Nanostructures in the CdHgTe–Electrolyte System.

Transformation Kinetics of Electric Field Domains in Weakly Coupled GaAs/AlGaAs Superlattices in a Transverse Electric Field.

Laser-Induced Resonant Electron Transitions in a Structure with Three Quantum Dots.

MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.

Properties of GaSb-Based LEDs with Grid Ohmic Contacts.