Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 7

Results: 25

III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002).
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 741, doi. 10.1134/1.1592841
By:
- Terukov, E. I.
Publication type:
Article
Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS[sub 2].
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 744, doi. 10.1134/1.1592842
By:
- Ismailov, D. I.;
- Alieva, M. V.;
- Alekperov, E. Sh.;
- Aliev, F. I.
Publication type:
Article
The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 748, doi. 10.1134/1.1592843
By:
- Babaev, A. A.;
- Kamilov, I. K.;
- Vagabova, Z. V.;
- Sultanov, S. M.;
- Askhabov, A. M.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Spectra of Fundamental Optical Functions of BeSe.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 751, doi. 10.1134/1.1592844
By:
- Sobolev, V. Val.;
- Sobolev, V. V.
Publication type:
Article
Optical Properties of Imperfect In[sub 2]Se[sub 3].
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 757, doi. 10.1134/1.1592845
By:
- Sobolev, V. Val.;
- Sobolev, V. V.
Publication type:
Article
Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 763, doi. 10.1134/1.1592846
By:
- Sherchenkov, A. A.
Publication type:
Article
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 766, doi. 10.1134/1.1592847
By:
- Kazanskii, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 769, doi. 10.1134/1.1592848
By:
- Smorgonskaya, É. A.
Publication type:
Article
Fullerene Single Crystals as Adsorbents of Organic Compounds.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 775, doi. 10.1134/1.1592849
By:
- Berezkin, V. I.;
- Viktorovskiı, I. V.;
- Vul’, A. Ya.;
- Golubev, L. V.;
- Petrova, V. N.;
- Khoroshko, L. O.
Publication type:
Article
X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 784, doi. 10.1134/1.1592850
By:
- Kyutt, R. N.;
- Danishevskiı, A. M.;
- Smorgonskaya, É. A.;
- Gordeev, S. K.
Publication type:
Article
The Influence of Deposition Conditions and Alloying on the Electronic Properties of Amorphous Selenium.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 789, doi. 10.1134/1.1592851
By:
- Kasap, S. O.;
- Koughia, K. V.;
- Fogal, B.;
- Belev, G.;
- Johanson, R. E.
Publication type:
Article
Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 795, doi. 10.1134/1.1592852
By:
- Kulakova, L. A.;
- Melekh, B. T.;
- Bakharev, V. I.;
- Kudoyarova, V. Kh.
Publication type:
Article
Effect of Rare-Earth Impurities on the Photoluminescence of Ge[sub 2]S[sub 3] Glass.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 800, doi. 10.1134/1.1592853
By:
- Babaev, A. A.;
- Kamilov, I. K.;
- Vagabova, Z. V.;
- Sultanov, S. M.;
- Askhabov, A. M.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Influence of the Order–Disorder Transition in the Crystal Electron Subsystem on the Electron Density at Lattice Sites.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 803, doi. 10.1134/1.1592854
By:
- Seregin, N. P.;
- Stepanova, T. R.;
- Kozhanova, Yu. V.;
- Volkov, V. P.;
- Seregin, P. P.;
- Troitskaya, N. N.
Publication type:
Article
Organic Materials for Photovoltaic and Light-Emitting Devices.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 807, doi. 10.1134/1.1592855
By:
- Yourre, T. A.;
- Rudaya, L. I.;
- Klimova, N. V.;
- Shamanin, V. V.
Publication type:
Article
The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy from Activated Nitrogen.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 838
By:
- Vorob’ev, A. A.;
- Korablev, V. V.;
- Karpov, S. Yu.
Publication type:
Article
Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 818, doi. 10.1134/1.1592857
By:
- Aleksandrova, E. L.;
- Goıkhman, M. Ya.;
- Podeshvo, I. V.;
- Gofman, I. V.;
- Kudryavtsev, V. V.
Publication type:
Article
Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 821, doi. 10.1134/1.1592858
By:
- Aleksandrova, E. L.;
- Goıkhman, M. Ya.;
- Subbotina, L. I.;
- Romashkova, K. A.;
- Gofman, I. F.;
- Kudryavtsev, V. V.;
- Yakimanskiı, A. V.
Publication type:
Article
A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence in Amorphous SiO[sub x]:(H, Er) Films Formed by DC Magnetron Sputtering.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 825, doi. 10.1134/1.1592859
By:
- Undalov, Yu. K.;
- Terukov, E. I.;
- Gusev, O. B.;
- Kudoyarova, V. Kh.
Publication type:
Article
Splitting of Resonant Optical Modes in Fabry–Perot Microcavities.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 832, doi. 10.1134/1.1592860
By:
- Golubev, V. G.;
- Dukin, A. A.;
- Medvedev, A. V.;
- Pevtsov, A. B.;
- Sel’kin, A. V.;
- Feoktistov, N. A.
Publication type:
Article
Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 816, doi. 10.1134/1.1592856
By:
- Lebedev, É. A.;
- Goikhman, M. Ya.;
- Kompan, M. E.;
- Kudoyarova, V. Kh.;
- Podeshvo, I. V.;
- Terukov, E. I.;
- Kudryavtsev, V. V.
Publication type:
Article
Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 843, doi. 10.1134/1.1592862
By:
- Svetukhin, V. V.;
- Grishin, A. G.;
- Prikhod’ko, O. V.
Publication type:
Article
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 846, doi. 10.1134/1.1592863
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.;
- Mokhov, E. N.
Publication type:
Article
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 855, doi. 10.1134/1.1592864
By:
- Dubrovskiı, V. G.;
- Egorov, V. A.;
- Cirlin, G. E.;
- Polyakov, N. K.;
- Samsonenko, Yu. B.;
- Kryzhanovskaya, N. V.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.
Publication type:
Article
Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 861, doi. 10.1134/1.1592865
By:
- Cherkashin, N. A.;
- Maksimov, M. V.;
- Makarov, A. G.;
- Shchukin, V. A.;
- Ustinov, V. M.;
- Lukovskaya, N. V.;
- Musikhin, Yu. G.;
- Cirlin, G. E.;
- Bert, N. A.;
- Alferov, Zh. I.;
- Ledentsov, N. N.;
- Bimberg, D.
Publication type:
Article