Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 6

Results: 24

Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained by Vapor-Phase Condensation.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 617, doi. 10.1134/1.1582523

By:

Belyaev, A. P.;
Rubets, V. P.;
Nuzhdin, M. Yu.;
Kalinkin, I. P.

Publication type:

Article

Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 620, doi. 10.1134/1.1582524

By:

Kilanov, D. V.;
Popov, V. P.;
Safronov, L. N.;
Nikiforov, A. I.;
Sholz, R.

Publication type:

Article

A Model of Reduction of Oxidation-Enhanced Diffusion in Heavily Doped Si Layers.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 625, doi. 10.1134/1.1582525

By:

Aleksandrov, O. V.;
Afonin, N. N.

Publication type:

Article

Defect Profiling in Semiconductor Layers by the Electrochemical Method.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 632, doi. 10.1134/1.1582526

By:

Nemcsics, Á.;
Makai, J. P.

Publication type:

Article

X-ray Photoelectron Spectroscopy and X-ray Electron-Microprobe Analysis of Single Crystals Based on Bismuth Telluride.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 636, doi. 10.1134/1.1582527

By:

Gasenkova, I. V.;
Chubarenko, V. A.;
Tyavlovskaya, E. A.;
Svechnikova, T. E.

Publication type:

Article

Photovoltaic Effects in CdV[sub 2]S[sub 4] Single Crystals and Structures Based on Them.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 641, doi. 10.1134/1.1582528

By:

Vaıpolin, A. A.;
Nikolaev, Yu. A.;
Polushina, I. K.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.;
Fernelius, N.

Publication type:

Article

Electrical Properties of Cadmium Telluride Films Synthesized in a Thermal Field with a Temperature Gradient.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 646, doi. 10.1134/1.1582529

By:

Belyaev, A. P.;
Rubets, V. P.;
Nuzhdin, M. Yu.

Publication type:

Article

The Effects of Monovacancies on the Terrace Width during Sublimation from the (111) Surface of a Diamond-Like Crystal.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 649, doi. 10.1134/1.1582530

By:

Zverev, A. V.;
Neizvestny, I. G.;
Shvartz, N. L.;
Yanovitskaja, Z. Sh.

Publication type:

Article

Fabrication and Properties of ZnFe[sub 2]S[sub 4] Single Crystals and Structures Based on Them.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 656, doi. 10.1134/1.1582531

By:

Vaıpolin, A. A.;
Nikolaev, Yu. A.;
Polushina, I. K.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.;
Fernelius, N.

Publication type:

Article

Determination of the Absolute Value of the Semiconductor Surface Potential by the Quasi-Static Capacitance–Voltage Characteristics of an MIS Structure.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 661, doi. 10.1134/1.1582532

By:

Zhdan, A. G.;
Kukharskaya, N. F.;
Chucheva, G. V.

Publication type:

Article

Atomic-Force-Microscopy Visualization of GeSi Buried Nanoislands on Crystal Cleavages in Silicon Structures.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 667, doi. 10.1134/1.1582533

By:

Dunaevskiı, M. S.;
Krasil’nik, Z. F.;
Lobanov, D. N.;
Novikov, A. V.;
Titkov, A. N.;
Laiho, R.

Publication type:

Article

Determination of the Parameters of Multilayer Nanostructures Using Two-Wave X-ray Reflectometry.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 675, doi. 10.1134/1.1582534

By:

Popov, N. L.;
Uspenskiı, Yu. A.;
Turyanskiı, A. G.;
Pirshin, I. V.;
Vinogradov, A. V.;
Platonov, Yu. Ya.

Publication type:

Article

Superradiance in Quantum Heterostructures.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 681, doi. 10.1134/1.1582535

By:

Klimovskaya, A. I.;
Driga, Yu. A.;
Gule, E. G.;
Pikaruk, O. O.

Publication type:

Article

Electron Transport in Coupled Quantum Wells with Double-Sided Doping.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 686, doi. 10.1134/1.1582536

By:

Galiev, G. B.;
Kaminskiı, V. E.;
Mokerov, V. G.;
Kul’bachinskiı, V. A.;
Lunin, R. A.;
Vasil’evskiı, I. S.;
Derkach, A. V.

Publication type:

Article

Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression of Resonance Tunneling in a Magnetic Field as a...

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 692, doi. 10.1134/1.1582537

By:

Khanin, Yu. N.;
Dubrovskiı, Yu. V.;
Vdovin, E. E.

Publication type:

Article

Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 699, doi. 10.1134/1.1582538

By:

Valakh, M. Ya.;
Vuychik, N. V.;
Strelchuk, V. V.;
Sorokin, S. V.;
Shubina, T. V.;
Ivanov, S. V.;
Kop’ev, P. S.

Publication type:

Article

Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 705, doi. 10.1134/1.1582539

By:

Sherstobitov, A. A.;
Minkov, G. M.;
Rut, O. É.;
Germanenko, A. V.;
Zvonkov, B. N.;
Uskova, E. A.;
Biryukov, A. A.

Publication type:

Article

On the Temperature Dependence of the dc Conductivity of a Semiconductor Quantum Wire in an Insulator.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 710, doi. 10.1134/1.1582540

By:

Poklonskiı, N. A.;
Kislyakov, E. F.;
Vyrko, S. A.

Publication type:

Article

The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO[sub 2] Layers.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 713, doi. 10.1134/1.1582541

By:

Kachurin, G. A.;
Yanovskaya, S. G.;
Tetelbaum, D. I.;
Mikhaılov, A. N.

Publication type:

Article

Interband Absorption of Light in Semiconductor Nanostructures.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 718, doi. 10.1134/1.1582542

By:

Pokutnyi, S. I.

Publication type:

Article

Modification of the Nanostructure of Diamond-like Carbon Films by Bombardment with Xenon Ions.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 723, doi. 10.1134/1.1582543

By:

Faizrakhmanov, I. A.;
Bazarov, V. V.;
Stepanov, A. L.;
Khaibullin, I. B.

Publication type:

Article

Effect of Illumination on the Rate of Relaxation of Light-induced Metastable States in a-Si:H(B).

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 727, doi. 10.1134/1.1582544

By:

Kurova, I. A.;
Ormont, N. N.;
Gromadin, A. L.

Publication type:

Article

Efficient Silicon Light-Emitting Diode with Temperature-Stable Spectral Characteristics.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 730, doi. 10.1134/1.1582545

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Mel’nikova, T. M.;
Pizzini, S.

Publication type:

Article

Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546

By:

Ivanov, S. V.;
Moiseev, K. D.;
Kaıgorodov, V. A.;
Solov’ev, V. A.;
Sorokin, S. V.;
Meltser, B. Ya.;
Grebenshchikova, E. A.;
Sedova, I. V.;
Terent’ev, Ya. V.;
Semenov, A. N.;
Astakhova, A. P.;
Mikhaılova, M. P.;
Toropov, A. A.;
Yakovlev, Yu. P.;
Kop’ev, P. S.;
Alferov, Zh. I.

Publication type:

Article