Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 5

Results: 19

Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 519, doi. 10.1134/1.1575353

By:

Galkina, T. I.;
Klokov, A. Yu.;
Sharkov, A. I.;
Korostelin, Yu. V.;
Zaıtsev, V. V.

Publication type:

Article

A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 526, doi. 10.1134/1.1575355

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Krivonosov, A. N.;
Kumekov, S. E.;
Stegantsov, S. V.

Publication type:

Article

Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 493, doi. 10.1134/1.1575352

By:

Bolkhovityanov, Yu. B.;
Pchelyakov, O. P.;
Sokolov, L. V.;
Chikichev, S. I.

Publication type:

Article

Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 537, doi. 10.1134/1.1575357

By:

Brudnyi, V. N.;
Grinyaev, S. N.;
Kolin, N. G.

Publication type:

Article

Magnetooptical Oscillations in Bismuth at T ≥ 77 K.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 523, doi. 10.1134/1.1575354

By:

Kondakov, O. V.;
Ivanov, K. G.

Publication type:

Article

Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 532, doi. 10.1134/1.1575356

By:

Tkachman, M. G.;
Shubina, T. V.;
Jmerik, V. N.;
Ivanov, S. V.;
Kop’ev, P. S.;
Paskova, T.;
Monemar, B.

Publication type:

Article

Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 546, doi. 10.1134/1.1575358

By:

Smagulova, S. A.;
Antonova, I. V.;
Neustroev, E. P.;
Skuratov, V. A.

Publication type:

Article

Diffusion of Europium in Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 551, doi. 10.1134/1.1575359

By:

Nazyrov, D. É.

Publication type:

Article

Photosensitive Structures Based on CdGa[sub 2]Se[sub 4] Single Crystals.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 553, doi. 10.1134/1.1575360

By:

Vaıpolin, A. A.;
Nikolaev, Yu. A.;
Polushina, I. K.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.;
Fernelius, N.

Publication type:

Article

Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361

By:

Sizov, D. S.;
Samsonenko, Yu. B.;
Tsyrlin, G. E.;
Polyakov, N. K.;
Egorov, V. A.;
Tonkikh, A. A.;
Zhukov, A. E.;
Mikhrin, S. S.;
Vasil’ev, A. P.;
Musikhin, Yu. G.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.;
Ledentsov, N. N.

Publication type:

Article

Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 564, doi. 10.1134/1.1575362

By:

Abramov, I. I.;
Ignatenko, S. A.;
Novik, E. G.

Publication type:

Article

Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 569, doi. 10.1134/1.1575363

By:

Borisenko, S. I.

Publication type:

Article

Electronic and Optical Properties of AlAs/Al[sub x]Ga[sub 1 – ][sub x]As(110) Superlattices.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 573, doi. 10.1134/1.1575364

By:

Karavaev, G. F.;
Chernyshov, V. N.;
Egunov, R. M.

Publication type:

Article

Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 581, doi. 10.1134/1.1575365

By:

Galiev, G. B.;
Karachevtseva, M. V.;
Mokerov, V. G.;
Strakhov, V. A.;
Shkerdin, G. N.;
Yaremenko, N. G.

Publication type:

Article

Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 586

By:

Vorob’ev, L. E.;
Danilov, S. N.;
Zerova, V. L.;
Firsov, D. A.

Publication type:

Article

Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 594, doi. 10.1134/1.1575367

By:

Mynbaeva, M. G.;
Lavrent’ev, A. A.;
Kuznetsov, N. I.;
Kuznetsov, A. N.;
Mynbaev, K. D.;
Lebedev, A. A.

Publication type:

Article

Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 598, doi. 10.1134/1.1575368

By:

Zyubin, A. S.;
Grigor’ev, F. V.;
Dembovskiı, S. A.

Publication type:

Article

Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 604, doi. 10.1134/1.1575369

By:

Ivlev, G. D.;
Gatskevich, E. I.

Publication type:

Article

Detection of Hydrogen Impurity in Silicon Radiation Detectors.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 611, doi. 10.1134/1.1575370

By:

Makarenko, L. F.;
Korshunov, F. P.;
Lastovskiı, S. B.;
Zamyatin, N. I.

Publication type:

Article