Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1259, doi. 10.1134/1.1626204
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 11
Results: 25
1
2
Photosensitive Structure on CdGa[sub 2]S[sub 4] Single Crystals.
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- Semiconductors, 2003, v. 37, n. 11, p. 1283, doi. 10.1134/1.1626209
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- Publication type:
- Article
3
Galvanomagnetic Effects in Atomic-Disordered HgSe[sub 1 – ][sub x]S[sub x] Compounds.
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- Semiconductors, 2003, v. 37, n. 11, p. 1278, doi. 10.1134/1.1626208
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- Publication type:
- Article
4
Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1243, doi. 10.1134/1.1626200
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- Publication type:
- Article
5
Optical and Thermal Properties of CuAl[sub x]In[sub 1 – ][sub x]Te[sub 2] Solid Solutions.
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- Semiconductors, 2003, v. 37, n. 11, p. 1247, doi. 10.1134/1.1626201
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- Publication type:
- Article
6
Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1252, doi. 10.1134/1.1626202
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- Publication type:
- Article
7
Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1291, doi. 10.1134/1.1626210
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- Publication type:
- Article
8
Effective Electron Mass in a Mn[sub x]Hg[sub 1 – ][sub x]Te System.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1257, doi. 10.1134/1.1626203
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- Publication type:
- Article
9
The Thermoelectric Power of a Semiconductor p–n Heterojunction.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1296, doi. 10.1134/1.1626211
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- Publication type:
- Article
10
Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1264, doi. 10.1134/1.1626205
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- Publication type:
- Article
11
Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1266, doi. 10.1134/1.1626206
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- Publication type:
- Article
12
Defect Formation in PbTe under the Action of a Laser Shock Wave.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1275, doi. 10.1134/1.1626207
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- Publication type:
- Article
13
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1321, doi. 10.1134/1.1626217
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- Publication type:
- Article
14
On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1299, doi. 10.1134/1.1626212
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- Publication type:
- Article
15
Photosensitive Structures Based on In[sub 2]S[sub 3] Crystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1308, doi. 10.1134/1.1626214
- By:
- Publication type:
- Article
16
Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1311, doi. 10.1134/1.1626215
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- Publication type:
- Article
17
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1303, doi. 10.1134/1.1626213
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- Publication type:
- Article
18
Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in Cd[sub x]Hg[sub 1 – ][sub x]Te Films.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1331, doi. 10.1134/1.1626219
- By:
- Publication type:
- Article
19
Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1342, doi. 10.1134/1.1626221
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- Publication type:
- Article
20
Pulsed-Laser Modification of Germanium Nanoclusters in Silicon.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1315, doi. 10.1134/1.1626216
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- Publication type:
- Article
21
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1326, doi. 10.1134/1.1626218
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- Publication type:
- Article
22
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1336, doi. 10.1134/1.1626220
- By:
- Publication type:
- Article
23
Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5μm) Region.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1345, doi. 10.1134/1.1626222
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- Publication type:
- Article
24
Thermoelements with Side Heat Exchange.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1350, doi. 10.1134/1.1626223
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- Publication type:
- Article
25
1.7–1.8μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures.
- Published in:
- Semiconductors, 2003, v. 37, n. 11, p. 1356, doi. 10.1134/1.1626224
- By:
- Publication type:
- Article