Works matching IS 10637826 AND DT 2003 AND VI 37 AND IP 10
Results: 19
Modification of Hg[sub 1 – ][sub x]Cd[sub x]Te Properties by Low-Energy Ions.
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- Semiconductors, 2003, v. 37, n. 10, p. 1127, doi. 10.1134/1.1619507
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- Article
Thermodynamic Stability of GaInSb, InAsSb, and GaInP Epitaxial Films.
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- Semiconductors, 2003, v. 37, n. 10, p. 1151, doi. 10.1134/1.1619508
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- Article
Kinetics of Ambipolar Diffusion and Drift Currents of Nonequilibrium Carriers in Semiconductors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1156, doi. 10.1134/1.1619509
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- Article
A Study of Linear Dichroism Induced by Uniaxial Strain in Silicon Crystals.
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- Semiconductors, 2003, v. 37, n. 10, p. 1160, doi. 10.1134/1.1619510
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- Article
Photoluminescence from Amorphous Carbon Grown by Laser Ablation of Graphite.
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- Semiconductors, 2003, v. 37, n. 10, p. 1165, doi. 10.1134/1.1619511
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- Article
Photodeposition of Silver at the Interface of a Heterojunction Based on a Solid Electrolyte: The Case of CdSe–As[sub 2]S[sub 3]:Ag[sub x](x=0.9–2.4) Heterojunctions.
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- Semiconductors, 2003, v. 37, n. 10, p. 1169, doi. 10.1134/1.1619512
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- Article
Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air.
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- Semiconductors, 2003, v. 37, n. 10, p. 1177, doi. 10.1134/1.1619513
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- Article
Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface.
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- Semiconductors, 2003, v. 37, n. 10, p. 1185, doi. 10.1134/1.1619514
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- Article
Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated with an Ultrathin SiO[sub 2] Layer.
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- Semiconductors, 2003, v. 37, n. 10, p. 1190, doi. 10.1134/1.1619515
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- Article
Electronic Absorption of Surface Acoustic Waves by Quantum Rings in a Magnetic Field.
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- Semiconductors, 2003, v. 37, n. 10, p. 1195, doi. 10.1134/1.1619516
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- Article
Characteristics of Multiple-Island Single-Electron Chains in Relation to Various Factors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1201, doi. 10.1134/1.1619517
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- Article
The X[sup +] Trion in a System with Spatial Separation of the Charge Carriers.
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- Semiconductors, 2003, v. 37, n. 10, p. 1205, doi. 10.1134/1.1619518
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- Article
Spectral Ellipsometry of Amorphous Hydrogenated Carbon Grown by Magnetron Sputtering of Graphite.
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- Semiconductors, 2003, v. 37, n. 10, p. 1211, doi. 10.1134/1.1619519
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- Article
Transient Photocurrent and Photoluminescence in Porous Silicon.
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- Semiconductors, 2003, v. 37, n. 10, p. 1214, doi. 10.1134/1.1619520
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- Article
Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields.
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- Semiconductors, 2003, v. 37, n. 10, p. 1217, doi. 10.1134/1.1619521
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- Article
Silicon-on-Insulator Nanotransistors: Prospects and Problems of Fabrication.
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- Semiconductors, 2003, v. 37, n. 10, p. 1222, doi. 10.1134/1.1619522
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- Article
Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers.
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- Semiconductors, 2003, v. 37, n. 10, p. 1229, doi. 10.1134/1.1619523
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- Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
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- Article
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
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- Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
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- Article