Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 8

Results: 25

Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 944, doi. 10.1134/1.1500478

By:

Aidaraliev, M.;
Zotova, N.V.;
Karandashev, S.A.;
Matveev, B.A.;
Remennyi, M.A.;
Stus, N.M.;
Talalakin, G.N.;
Shustov, V.V.;
Kuznetsov, V.V.;
Kognovitskaya, E.A.

Publication type:

Article

Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 941

By:

Anan'ev, A.S.;
Kon'kov, O.I.;
Lebedev, V.M.;
Novokhatski, A.N.;
Terukov, E.I.;
Trapeznikova, I.N.

Publication type:

Article

Two-Dimensional p-n Junction under Equilibrium Conditions.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 903, doi. 10.1134/1.1500469

By:

Achoyan, A.Sh.;
Yesayan, A.E.;
Kazaryan, E.M.;
Petrosyan, S.G.

Publication type:

Article

Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 899, doi. 10.1134/1.1500468

By:

Zhukov, A.E.;
Kovsh, A.R.;
Semenova, E.S.;
Ustinov, V.M.;
Wei, L.;
Wang, J.-S.;
Chi, J.Y.

Publication type:

Article

Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 895, doi. 10.1134/1.1500467

By:

Lyubas, G.A.;
Ledentsov, N.N.;
Litvinov, D.;
Semyagin, B.R.;
Soshnikov, I.P.;
Ustinov, V.M.;
Bolotov, V.V.;
Gerthsen, D.

Publication type:

Article

Viktor Il'ich Fistul' (on his 75th birthday).

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 950, doi. 10.1134/1.1500479

By:

Spitsyn, A.

Publication type:

Article

Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 937, doi. 10.1134/1.1500476

By:

Ablova, M.S.;
Kulikov, G.S.;
Persheev, S.K.

Publication type:

Article

Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 837, doi. 10.1134/1.1500455

By:

Preobrazhenskii, V.V.;
Putyato, M.A.;
Semyagin, B.R.

Publication type:

Article

Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 929, doi. 10.1134/1.1500474

By:

Ivanov, Yu.I.;
Agrinskaya, N.V.;
Petrov, P.V.;
Ustinov, V.M.;
Tsyrlin, G.E.

Publication type:

Article

Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 924, doi. 10.1134/1.1500473

By:

Sinyavskii, E.P.;
Khamidullin, R.A.

Publication type:

Article

Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 916, doi. 10.1134/1.1500471

By:

Elesin, V.F.;
Kateev, I.Yu.;
Podlivaev, A.I.

Publication type:

Article

Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 921, doi. 10.1134/1.1500472

By:

Kvon, Z.D.;
Olshanetsky, E.B.;
Plotnikov, A.E.;
Toropov, A.I.;
Portal, J.C.

Publication type:

Article

Electron Tunneling through a Double Barrier in a Reverse-Biased Metal-Oxide-Silicon Structure.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 889, doi. 10.1134/1.1500466

By:

Kareva, G.G.;
Vexler, M.I.;
Grekhov, I.V.;
Shulekin, A.F.

Publication type:

Article

Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 908, doi. 10.1134/1.1500470

By:

Pshenai-Severin, D.A.;
Ravich, Yu.I.

Publication type:

Article

Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 883, doi. 10.1134/1.1500465

By:

Vintsents, S.V.;
Zaitsev, V.B.;
Zoteev, A.V.;
Plotnikov, G.S.;
Rodionov, A.I.;
Chervyakov, A.V.

Publication type:

Article

Electrical and Thermoelectric Properties of p-Ag2 Te.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 869, doi. 10.1134/1.1500462

By:

Aliev, F.F.;
Kerimova, E.M.;
Aliev, S.A.

Publication type:

Article

Photoconductivity of Coarse-Grained CdTe Polycrystals.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 874, doi. 10.1134/1.1500463

By:

Medvedev, S.A.;
Klevkov, Yu.V.;
Klevkov, S.A.;
Kolosov, S.A.;
Krivobok, V.S.;
Plotnikov, A.F.

Publication type:

Article

Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 878, doi. 10.1134/1.1500464

By:

Andrianov, A.V.;
Yamada, K.;
Tampo, H.;
Asahi, H.;
Nekrasov, V.Yu.;
Petrovskaya, Z.N.;
Sreseli, O.M.;
Zinov'ev, N.N.

Publication type:

Article

Optical Properties of Bulk and Epitaxial Unordered Gax In1 - x P Semiconductor Alloys.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 863, doi. 10.1134/1.1500461

By:

Vyklyuk, Ya.I.;
Deibuk, V.G.;
Zolotarev, S.V.

Publication type:

Article

Influence of Tellurium Impurity on the Properties of Ga1 - X InXAsYSb1 - Y (X > 0.22) Solid Solutions.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 855, doi. 10.1134/1.1500460

By:

Voronina, T.I.;
Lagunova, T.S.;
Kunitsyna, E.V.;
Parkhomenko, Ya.A.;
Sipovskaya, M.A.;
Yakovlev, Yu.P.

Publication type:

Article

Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 - x Snx Te Solid Solutions.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 852, doi. 10.1134/1.1500459

By:

Nemov, S.A.;
Seregin, N.P.

Publication type:

Article

Initial Stages of Growth of Diamond Island Films on Crystalline Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 848, doi. 10.1134/1.1500458

By:

Feoktistov, N.A.;
Afanas'ev, V.V.;
Golubev, V.G.;
Grudinkin, S.A.;
Kukushkin, S.A.;
Melekhin, V.G.

Publication type:

Article

Dissociation Energies of a CiCs Complex and the A Center in Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 845, doi. 10.1134/1.1500457

By:

Boyarkina, N.I.;
Smagulova, S.A.;
Artem'ev, A.A.

Publication type:

Article

Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 841, doi. 10.1134/1.1500456

By:

Vintsents, S.V.;
Zoteev, A.V.;
Plotnikov, G.S.

Publication type:

Article

One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 8, p. 932, doi. 10.1134/1.1500475

By:

Tolmachev, V.A.;
Granitsyna, L.S.;
Vlasova, E.N.;
Volchek, B.Z.;
Nashchekin, A.V.;
Remenyuk, A.D.;
Astrova, E.V.

Publication type:

Article