Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 6

Results: 22

Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown from the Vapor Phase.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 636, doi. 10.1134/1.1485661

By:

Popovich, V. D.;
Grigorovich, G. M.;
Peleshchak, P. M.;
Tkachuk, P. N.

Publication type:

Article

Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 641, doi. 10.1134/1.1485662

By:

Andrianov, A. V.;
Nekrasov, V. Yu.;
Shmidt, N. M.;
Zavarin, E. E.;
Usikov, A. S.;
Zinov’ev, N. N.;
Tkachuk, M. N.

Publication type:

Article

Formation of Selenium-Containing Complexes in Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 605, doi. 10.1134/1.1485656

By:

Taskin, A. A.;
Tishkovskiı, E. G.

Publication type:

Article

Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 615, doi. 10.1134/1.1485657

By:

Baıdakova, M. V.;
Vul’, A. Ya.;
Golubev, V. G.;
Grudinkin, S. A.;
Melekhin, V. G.;
Feoktistov, N. A.;
Krüger, A.

Publication type:

Article

Local Vibrational Modes of the Oxygen–Vacancy Complex in Germanium.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 621, doi. 10.1134/1.1485658

By:

Litvinov, V. V.;
Murin, L. I.;
Lindstrom, J. L.;
Markevich, V. P.;
Petukh, A. N.

Publication type:

Article

Luminescent Si–Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 625, doi. 10.1134/1.1485659

By:

Shengurov, V. G.;
Svetlov, S. P.;
Chalkov, V. Yu.;
Andreev, B. A.;
Krasil’nik, Z. F.;
Ber, B. Ya.;
Drozdov, Yu. N.;
Yablonsky, A. N.

Publication type:

Article

Migration of Laser-Induced Point Defects in IV–VI Compounds.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 629, doi. 10.1134/1.1485660

By:

Plyatsko, S. V.

Publication type:

Article

Silicon Nanocrystal Formation upon Annealing of SiO[sub 2] Layers Implanted with Si Ions.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 647, doi. 10.1134/1.1485663

By:

Kachurin, G. A.;
Yanovskaya, S. G.;
Volodin, V. A.;
Kesler, V. G.;
Leier, A. F.;
Ruault, M.-O.

Publication type:

Article

Role of Silicon Vacancies in Formation of Schottky Barriers at Ag and Au Contacts to 3C- and 6H-SiC.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 652, doi. 10.1134/1.1485664

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Posrednik, O. V.;
Tairov, Yu. M.

Publication type:

Article

Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 655, doi. 10.1134/1.1485665

By:

Agafonov, E. N.;
Georgobiani, A. N.;
Lepnev, L. S.

Publication type:

Article

Simulation of the Energy Spectrum of Surface States in an MIS Structure Taking Current Leakage through the Insulator into Account.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 659, doi. 10.1134/1.1485666

By:

Berman, L. S.

Publication type:

Article

Mixed Vibrational Modes of PbTe Nanocrystallites.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 663, doi. 10.1134/1.1485667

By:

Belogorokhov, A. I.;
Belogorokhova, L. I.;
Khokhlov, D. R.;
Lemeshko, S. V.

Publication type:

Article

Electron States in (AlAs)[sub M](Al[sub x]Ga[sub 1 – ][sub x]As)[sub N] Superlattices.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 670, doi. 10.1134/1.1485668

By:

Karavaev, G. F.;
Chernyshov, V. N.;
Egunov, R. M.

Publication type:

Article

Electron Mobility in a AlGaAs/GaAs/AlGaAs Quantum Well.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 674, doi. 10.1134/1.1485669

By:

Mokerov, V. G.;
Galiev, G. B.;
Pozela, J.;
Pozela, K.;
Juciene, V.

Publication type:

Article

Resonance Transfer of Charge Carriers in Si/CaF[sub 2] Periodic Nanostructures via Trap States in Insulator Layers.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 679, doi. 10.1134/1.1485670

By:

Berashevich, Yu. A.;
Danilyuk, A. L.;
Borisenko, V. E.

Publication type:

Article

Inversion of the Electron Population in Subbands of Dimensional Quantization with Longitudinal Transport in Tunnel-Coupled Quantum Wells.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 685, doi. 10.1134/1.1485671

By:

Aleshkin, V. Ya.;
Dubinov, A. A.

Publication type:

Article

Photoconductivity of Nanostructured Hydrogenated Silicon Films.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 691, doi. 10.1134/1.1485672

By:

Golikova, O. A.

Publication type:

Article

Vibratonal Spectroscopy of a-C:H(Co).

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 695, doi. 10.1134/1.1485673

By:

Zvonareva, T. K.;
Ivanova, E. I.;
Frolova, G. S.;
Lebedev, V. M.;
Ivanov-Omskiı, V. I.

Publication type:

Article

Spontaneous and Stimulated Emission from Magnetron-Deposited ZnO–SiO[sub 2]–Si Thin-Film Nanocavities.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 701, doi. 10.1134/1.1485674

By:

Gruzintsev, A. N.;
Volkov, V. T.;
Barthou, C.;
Benalloul, P.

Publication type:

Article

Photoelectric Properties of p[sup +]–n Junctions Based on 4H-SiC Ion-Implanted with Aluminum.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 706, doi. 10.1134/1.1485675

By:

Violina, G. N.;
Kalinina, E. V.;
Kholujanov, G. F.;
Onushkin, G. A.;
Kossov, V. G.;
Yafaev, R. R.;
Hallén, A.;
Konstantinov, A. O.

Publication type:

Article

Silicon Carbide Detectors of High-Energy Particles.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 710, doi. 10.1134/1.1485676

By:

Violina, G. N.;
Kalinina, E. V.;
Kholujanov, G. F.;
Kossov, V. G.;
Yafaev, R. R.;
Hallén, A.;
Konstantinov, A. O.

Publication type:

Article

Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 714, doi. 10.1134/1.1485677

By:

Gordeev, N. Yu.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Lyutetsky, A. V.;
Pikhtin, N. A.;
Fetisova, N. V.;
Tarasov, I. S.;
Kop’ev, P. S.

Publication type:

Article