Results: 24
Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon.
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- Semiconductors, 2002, v. 36, n. 3, p. 239, doi. 10.1134/1.1461395
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- Article
Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions.
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- Semiconductors, 2002, v. 36, n. 3, p. 250, doi. 10.1134/1.1461396
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- Article
The Preexponential Factor in Mott’s Law for Variable-Range-Hopping Conduction in Lightly Compensated p-Hg[sub 0.8]Cd[sub 0.2]Te Crystals.
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- Semiconductors, 2002, v. 36, n. 3, p. 254, doi. 10.1134/1.1461397
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- Article
E[sub 0] Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions.
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- Semiconductors, 2002, v. 36, n. 3, p. 259, doi. 10.1134/1.1461398
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- Article
Effective Exciton Mass in III–V Semiconductors.
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- Semiconductors, 2002, v. 36, n. 3, p. 270, doi. 10.1134/1.1461401
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- Article
Internal Ionization Energy in II–VI Compounds.
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- Semiconductors, 2002, v. 36, n. 3, p. 286, doi. 10.1134/1.1461405
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- Article
Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures.
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- Semiconductors, 2002, v. 36, n. 3, p. 290, doi. 10.1134/1.1461406
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- Article
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films.
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- Semiconductors, 2002, v. 36, n. 3, p. 265, doi. 10.1134/1.1461400
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- Article
Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field.
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- Semiconductors, 2002, v. 36, n. 3, p. 263, doi. 10.1134/1.1461399
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- Article
Optical Properties of Ultradisperse CdSe[sub x]Te[sub 1 – ][sub x] (0≤x≤1) Particles in a Silicate Glass Matrix.
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- Semiconductors, 2002, v. 36, n. 3, p. 298, doi. 10.1134/1.1461407
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- Article
Special Features of Charge Transport in PbGa[sub 2]Se[sub 4] Crystals.
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- Semiconductors, 2002, v. 36, n. 3, p. 273, doi. 10.1134/1.1461402
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- Article
Efficiency of the Intercalation of Aluminum Atoms under a Monolayer and Submonolayer Two-Dimensional Graphite Film on a Metal.
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- Semiconductors, 2002, v. 36, n. 3, p. 276, doi. 10.1134/1.1461403
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- Article
Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching.
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- Semiconductors, 2002, v. 36, n. 3, p. 282, doi. 10.1134/1.1461404
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- Article
Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum in a Field of a Nonlinear Wave.
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- Semiconductors, 2002, v. 36, n. 3, p. 307, doi. 10.1134/1.1461408
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- Article
Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band.
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- Semiconductors, 2002, v. 36, n. 3, p. 311, doi. 10.1134/1.1461409
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- Article
Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation.
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- Semiconductors, 2002, v. 36, n. 3, p. 319, doi. 10.1134/1.1461410
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- Article
Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies.
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- Semiconductors, 2002, v. 36, n. 3, p. 325, doi. 10.1134/1.1461411
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- Article
Changes in Properties of a <PorousSilicon>/Silicon System during Gradual Etching off of the Porous Silicon Layer.
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- Semiconductors, 2002, v. 36, n. 3, p. 330, doi. 10.1134/1.1461412
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- Article
Carrier Transport in Porous Silicon.
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- Semiconductors, 2002, v. 36, n. 3, p. 336, doi. 10.1134/1.1461413
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- Article
Solar Cells Based on CuIn[sub 1 – ][sub x]Ga[sub x]Se[sub 2] Films Obtained by Pulsed Laser Evaporation.
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- Semiconductors, 2002, v. 36, n. 3, p. 340, doi. 10.1134/1.1461414
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- Article
Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers.
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- Semiconductors, 2002, v. 36, n. 3, p. 344, doi. 10.1134/1.1461415
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- Article
The Use of SiC Triode Structures as Detectors of Nuclear Particles.
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- Semiconductors, 2002, v. 36, n. 3, p. 354, doi. 10.1134/1.1461416
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- Article
Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions.
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- Semiconductors, 2002, v. 36, n. 3, p. 358, doi. 10.1134/1.1461417
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- Article
Igor’ Georgievich Neizvestnyı (on his 70th birthday).
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- Semiconductors, 2002, v. 36, n. 3, p. 362, doi. 10.1134/1.1461458
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- Article