Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 3

Results: 24

Solar Cells Based on CuIn[sub 1 – ][sub x]Ga[sub x]Se[sub 2] Films Obtained by Pulsed Laser Evaporation.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 340, doi. 10.1134/1.1461414

By:

Gremenok, V. F.;
Bodnar’, I. V.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Schock, H.-W.

Publication type:

Article

Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 239, doi. 10.1134/1.1461395

By:

Abdulin, Kh. A.;
Gorelkinskiı, Yu. V.;
Mukashev, B. N.;
Tokmoldin, S. Zh.

Publication type:

Article

Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 250, doi. 10.1134/1.1461396

By:

Ardyshev, V. M.;
Ardyshev, M. V.

Publication type:

Article

Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 265, doi. 10.1134/1.1461400

By:

Georgobiani, A. N.;
Gruzintsev, A. N.;
Volkov, V. T.;
Vorob’ev, M. O.

Publication type:

Article

The Preexponential Factor in Mott’s Law for Variable-Range-Hopping Conduction in Lightly Compensated p-Hg[sub 0.8]Cd[sub 0.2]Te Crystals.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 254, doi. 10.1134/1.1461397

By:

Bogoboyashchiı, V. V.

Publication type:

Article

E[sub 0] Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 259, doi. 10.1134/1.1461398

By:

Kusmenko, R. V.;
Domashevskaya, É. P.

Publication type:

Article

Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 263, doi. 10.1134/1.1461399

By:

Gadzhialiev, M. M.

Publication type:

Article

Effective Exciton Mass in III–V Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 270, doi. 10.1134/1.1461401

By:

Averkiev, N. S.;
Romanov, K. S.

Publication type:

Article

Efficiency of the Intercalation of Aluminum Atoms under a Monolayer and Submonolayer Two-Dimensional Graphite Film on a Metal.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 276, doi. 10.1134/1.1461403

By:

Gall, N. R.;
Rut’kov, E. V.;
Tontegode, A. Ya.

Publication type:

Article

Special Features of Charge Transport in PbGa[sub 2]Se[sub 4] Crystals.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 273, doi. 10.1134/1.1461402

By:

Tagiev, B. G.;
Musaeva, N. N.;
Dzhabbarov, R. B.

Publication type:

Article

Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 282, doi. 10.1134/1.1461404

By:

Feklisova, O. V.;
Yakimov, E. B.;
Yarykin, N. A.

Publication type:

Article

Internal Ionization Energy in II–VI Compounds.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 286, doi. 10.1134/1.1461405

By:

Komashchenko, A. V.;
Komashchenko, V. N.;
Kolezhuk, K. V.;
Sheremetova, G. I.;
Fursenko, V. D.;
Bobrenko, Yu. N.

Publication type:

Article

Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 290, doi. 10.1134/1.1461406

By:

Trukhanov, E. M.;
Kolesnikov, A. V.;
Vasilenko, A. P.;
Gutakovskiı, A. K.

Publication type:

Article

Optical Properties of Ultradisperse CdSe[sub x]Te[sub 1 – ][sub x] (0≤x≤1) Particles in a Silicate Glass Matrix.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 298, doi. 10.1134/1.1461407

By:

Bodnar, I. V.;
Gurin, V. S.;
Molochko, A. P.;
Soloveı, N. P.;
Prokoshin, P. V.;
Yumashev, K. V.

Publication type:

Article

Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum in a Field of a Nonlinear Wave.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 307, doi. 10.1134/1.1461408

By:

Kryuchkov, S. V.;
Fedorov, É. G.

Publication type:

Article

Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 311, doi. 10.1134/1.1461409

By:

Golant, E. I.;
Pashkovskiı, A. B.

Publication type:

Article

Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 319, doi. 10.1134/1.1461410

By:

Konstantinova, E. A.;
Timoshenko, V. Yu.;
Kashkarov, P. K.;
Kytin, V. G.;
Gaıvoronskiı, V. Ya.;
Porteanu, H.;
Dittrich, Th.;
Koch, F.

Publication type:

Article

Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 325, doi. 10.1134/1.1461411

By:

Lisachenko, M. G.;
Konstantinov, E. A.;
Timoshenko, V. Yu.;
Kashkarov, P. K.

Publication type:

Article

Carrier Transport in Porous Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 336, doi. 10.1134/1.1461413

By:

Averkiev, N. S.;
Kazakova, L. P.;
Smirnova, N. N.

Publication type:

Article

Changes in Properties of a <PorousSilicon>/Silicon System during Gradual Etching off of the Porous Silicon Layer.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 330, doi. 10.1134/1.1461412

By:

Venger, E. F.;
Gorbach, T. Ya.;
Kirillova, S. I.;
Primachenko, V. E.;
Chernobaı, V. A.

Publication type:

Article

Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 344, doi. 10.1134/1.1461415

By:

Pikhtin, N. A.;
Sliptchenko, S. O.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

The Use of SiC Triode Structures as Detectors of Nuclear Particles.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 354, doi. 10.1134/1.1461416

By:

Strokan, N. B.;
Ivanov, A. M.;
Savkina, N. S.;
Davydov, D. V.;
Bogdanova, E. V.;
Lebedev, A. A.

Publication type:

Article

Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 358, doi. 10.1134/1.1461417

By:

Aleksandrov, O. V.;
Zakhar’in, A. O.;
Sobolev, N. A.;
Nikolaev, Yu. A.

Publication type:

Article

Igor’ Georgievich Neizvestnyı (on his 70th birthday).

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 362, doi. 10.1134/1.1461458

By:

Spitsyn, A.

Publication type:

Article