Optical Properties of Fluorite in a Wide Energy Range.
- Published in:
- Semiconductors, 2002, v. 36, n. 2, p. 148, doi. 10.1134/1.1453427
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 2
Results: 25
1
2
Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing.
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- Semiconductors, 2002, v. 36, n. 2, p. 157, doi. 10.1134/1.1453429
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- Article
3
Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs.
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- Semiconductors, 2002, v. 36, n. 2, p. 167, doi. 10.1134/1.1453431
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- Publication type:
- Article
4
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors.
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- Semiconductors, 2002, v. 36, n. 2, p. 121, doi. 10.1134/1.1453422
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- Publication type:
- Article
5
Linear Photovoltaic Effect in Gyrotropic Crystals.
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- Semiconductors, 2002, v. 36, n. 2, p. 141, doi. 10.1134/1.1453426
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- Publication type:
- Article
6
Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E[sub 0] Component of the Photoreflectance Signal.
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- Semiconductors, 2002, v. 36, n. 2, p. 153, doi. 10.1134/1.1453428
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- Publication type:
- Article
7
Electrical Properties of Silicon Layers Implanted with Ytterbium Ions.
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- Semiconductors, 2002, v. 36, n. 2, p. 126, doi. 10.1134/1.1453423
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- Article
8
Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors with Deep-Level Centers.
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- Semiconductors, 2002, v. 36, n. 2, p. 130, doi. 10.1134/1.1453424
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- Article
9
“LO-Phonon” Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse.
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- Semiconductors, 2002, v. 36, n. 2, p. 136, doi. 10.1134/1.1453425
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- Publication type:
- Article
10
The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors.
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- Semiconductors, 2002, v. 36, n. 2, p. 185, doi. 10.1134/1.1453435
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- Article
11
Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 2, p. 171, doi. 10.1134/1.1453432
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- Article
12
Annealing of Deep Boron Centers in Silicon Carbide.
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- Semiconductors, 2002, v. 36, n. 2, p. 160, doi. 10.1134/1.1453430
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- Article
13
Silicon Surface Treatment by Pulsed Nitrogen Plasma.
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- Semiconductors, 2002, v. 36, n. 2, p. 189, doi. 10.1134/1.1453436
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- Publication type:
- Article
14
Optical Absorption in (Pb[sub 0.78]Sn[sub 0.22])[sub 1 – ][sub X]In[sub X]Te(X = 0.001 – 0.005).
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- Semiconductors, 2002, v. 36, n. 2, p. 176, doi. 10.1134/1.1453433
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- Article
15
Distribution of Charge Carriers in Dissipative Semiconductor Structures.
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- Semiconductors, 2002, v. 36, n. 2, p. 180, doi. 10.1134/1.1453434
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- Publication type:
- Article
16
Segregation of Mobile Ions on Insulator–Semiconductor Interfaces in Metal–Insulator–Semiconductor Structures.
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- Semiconductors, 2002, v. 36, n. 2, p. 197, doi. 10.1134/1.1453438
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- Article
17
The Dicke Superradiation in Quantum Heterostructures under Optical Pumping.
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- Semiconductors, 2002, v. 36, n. 2, p. 224, doi. 10.1134/1.1453443
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- Publication type:
- Article
18
Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma.
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- Semiconductors, 2002, v. 36, n. 2, p. 203, doi. 10.1134/1.1453439
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- Publication type:
- Article
19
Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 – ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources.
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- Semiconductors, 2002, v. 36, n. 2, p. 191, doi. 10.1134/1.1453437
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- Publication type:
- Article
20
Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range.
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- Semiconductors, 2002, v. 36, n. 2, p. 226
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- Article
21
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.
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- Semiconductors, 2002, v. 36, n. 2, p. 230
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- Article
22
Energy Spectrum and Optical Properties of the Quantum Dot–Impurity Center Complex.
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- Semiconductors, 2002, v. 36, n. 2, p. 208, doi. 10.1134/1.1453440
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- Article
23
Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures.
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- Semiconductors, 2002, v. 36, n. 2, p. 213, doi. 10.1134/1.1453441
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- Article
24
Temperature Dependence of the Optical Energy Gap for the CdS[sub x]Se[sub 1 – ][sub x] Quantum Dots.
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- Semiconductors, 2002, v. 36, n. 2, p. 219, doi. 10.1134/1.1453442
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- Publication type:
- Article
25
Optimal Doping of the Drift Region in Unipolar Diodes and Transistors.
- Published in:
- Semiconductors, 2002, v. 36, n. 2, p. 235, doi. 10.1134/1.1453446
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- Article