Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 11
Results: 24
Effect of Surface State Density on Room Temperature Photoluminescence from Si–SiO[sub 2] Structures in the Range of Band-to-Band Recombination in Silicon.
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- Semiconductors, 2002, v. 36, n. 11, p. 1225, doi. 10.1134/1.1521220
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Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.
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- Semiconductors, 2002, v. 36, n. 11, p. 1252, doi. 10.1134/1.1521226
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The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.
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- Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222
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International Symposium on Photoluminescence and Electroluminescence of Rare-Earth Elements in Semiconductors and Insulators.
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- Semiconductors, 2002, v. 36, n. 11, p. 1202, doi. 10.1134/1.1521215
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Vadim Fedorovich Masterov, a Scientist and a Teacher.
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- Semiconductors, 2002, v. 36, n. 11, p. 1199, doi. 10.1134/1.1521214
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A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.
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- Semiconductors, 2002, v. 36, n. 11, p. 1209, doi. 10.1134/1.1521217
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V. F. Masterov’s School and Fullerene Research at the Department of Experimental Physics, St. Petersburg State Technical University.
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- Semiconductors, 2002, v. 36, n. 11, p. 1204, doi. 10.1134/1.1521216
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Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs.
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- Semiconductors, 2002, v. 36, n. 11, p. 1215, doi. 10.1134/1.1521218
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Temperature Dependences of Photoluminescence Spectra of Single-Crystal Ca[sub 2]GeO[sub 4]:Cr[sup 4+] Films.
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- Semiconductors, 2002, v. 36, n. 11, p. 1221, doi. 10.1134/1.1521219
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Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures.
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- Semiconductors, 2002, v. 36, n. 11, p. 1240, doi. 10.1134/1.1521223
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Photoluminescence and Excitation Features of Nd[sup 3+] Ions in (La[sub 0.97]Nd[sub 0.03])[sub 2]S[sub 3] · 2Ga[sub 2]O[sub 3] Glasses.
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- Semiconductors, 2002, v. 36, n. 11, p. 1244, doi. 10.1134/1.1521224
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Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films.
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- Semiconductors, 2002, v. 36, n. 11, p. 1248, doi. 10.1134/1.1521225
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Buried Nanoscale Damaged Layers Formed in Si and SiC Crystals as a Result of High-Dose Proton Implantation.
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- Semiconductors, 2002, v. 36, n. 11, p. 1227, doi. 10.1134/1.1521221
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The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si.
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- Semiconductors, 2002, v. 36, n. 11, p. 1260, doi. 10.1134/1.1521227
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Possibility of Observing Bose–Einstein Condensation in Semiconductors via Mössbauer Spectroscopy using the [sup 67]Zn Isotope.
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- Semiconductors, 2002, v. 36, n. 11, p. 1267, doi. 10.1134/1.1521228
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Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).
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- Semiconductors, 2002, v. 36, n. 11, p. 1270, doi. 10.1134/1.1521229
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Kinetic Theory of Negative Magnetoresistance as an Alternative to Weak Localization in Semiconductors.
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- Semiconductors, 2002, v. 36, n. 11, p. 1276, doi. 10.1134/1.1521230
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The Influence of Adsorbate on the Work Function and Penetrability of the Surface Potential Barrier of GaAs(110) Single Crystal.
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- Semiconductors, 2002, v. 36, n. 11, p. 1283, doi. 10.1134/1.1521231
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ZnMnSe/ZnSSe Type-II Semimagnetic Superlattices: Growth and Magnetoluminescence Properties.
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- Semiconductors, 2002, v. 36, n. 11, p. 1288, doi. 10.1134/1.1521232
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Ordering of Nanostructures in a Si/Ge[sub 0.3]Si[sub 0.7]/Ge System during Molecular Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 11, p. 1294, doi. 10.1134/1.1521233
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Effect of Fullerene on the Photogeneration and Transport of Charge Carriers in Triphenylamine-Containing Polyimides.
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- Semiconductors, 2002, v. 36, n. 11, p. 1299, doi. 10.1134/1.1521234
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Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux.
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- Semiconductors, 2002, v. 36, n. 11, p. 1303, doi. 10.1134/1.1521235
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High Power Single-Mode (λ = 1.3–1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures.
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- Semiconductors, 2002, v. 36, n. 11, p. 1308, doi. 10.1134/1.1521236
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High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
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- Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
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