Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 10

Results: 23

Dependence of Scattering of Quasi-Two-Dimensional Electrons by Acoustic Phonons on the Parameters of a GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattice.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1159, doi. 10.1134/1.1513862

By:

Borisenko, S. I.

Publication type:

Article

Anisotropy of Magnetooptical Absorption of Quantum Dot–Impurity Center Complexes.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1146, doi. 10.1134/1.1513860

By:

Krevchik, V. D.;
Grunin, A. B.;
Zaıtsev, R. V.

Publication type:

Article

Dependence of the Optical Gap of Si Quantum Dots on the Dot Size.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1154, doi. 10.1134/1.1513861

By:

Burdov, V. A.

Publication type:

Article

Thermodynamic Stability of Bulk and Epitaxial Ge[sub 1 – ][sub x]Sn[sub x] Semiconductor Alloys.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1073, doi. 10.1134/1.1513846

By:

Deıbuk, V. G.;
Korolyuk, Yu. G.

Publication type:

Article

The Effect of the Concentration of the Majority Charge Carriers and Irradiation Intensity on the Efficiency of Radiation-Defect Production in n-Si Crystals.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1077, doi. 10.1134/1.1513847

By:

Pagava, T. A.;
Basheleıshvili, Z. V.

Publication type:

Article

Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1079, doi. 10.1134/1.1513848

By:

Pagava, T. A.

Publication type:

Article

Chalcogen Dimers in Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1083, doi. 10.1134/1.1513849

By:

A Taskin, A.

Publication type:

Article

Chemical Bonding and Elastic Constants of Certain Ternary III–V Solid Solutions.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1091, doi. 10.1134/1.1513850

By:

Deıbuk, V. G.;
Viklyuk, Ya. I.

Publication type:

Article

The Nucleation of Coherent Semiconductor Islands during the Stranski–Krastanov Growth Induced by Elastic Strains.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1097, doi. 10.1134/1.1513851

By:

Kukushkin, S. A.;
Osipov, A. V.;
Schmitt, F.;
Hess, P.

Publication type:

Article

Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1106, doi. 10.1134/1.1513852

By:

Arutyunov, N. Yu.;
Mikhaılin, A. V.;
Davydov, V. Yu.;
Emtsev, V. V.;
Oganesyan, G. A.;
Haller, E. E.

Publication type:

Article

The Influence of Shallow Impurities on the Temperature Dependence of Microhardness and the Photomechanical Effect in Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1111, doi. 10.1134/1.1513853

By:

Gerasimov, A. B.;
Chiradze, G. D.

Publication type:

Article

Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1114, doi. 10.1134/1.1513854

By:

Ermolov, P. F.;
Karmanov, D. E.;
Leflat, A. K.;
Manankov, V. M.;
Merkin, M. M.;
Shabalina, E. K.

Publication type:

Article

Electronic Properties of Liquid Tl[sub 2]Te,Tl[sub 2]Se,Ag[sub 2]Te,Cu[sub 2]Te, and Cu[sub 2]Se Alloys.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1123, doi. 10.1134/1.1513855

By:

Sklyarchuk, V. M.;
Plevachuk, Yu. O.

Publication type:

Article

Dependence of GaN Photoluminescence on the Excitation Intensity.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1128, doi. 10.1134/1.1513856

By:

Bessolov, V. N.;
Evstropov, V. V.;
Kompan, M. E.;
Mesh, M. V.

Publication type:

Article

Photosensitivity of Structures Based on I–III[sub n]–VI[sub m] Ternary Compounds Containing Ordered Vacancies.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1132

By:

Bodnar’, I. V.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Yakushev, M. V.

Publication type:

Article

Effect of the State of the Silicon Surface on Hydrogen Sensitivity of Pd/n-Si Barrier Structures.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1136, doi. 10.1134/1.1513858

By:

Kalygina, V. M.;
Khludkova, L. S.;
Balyuba, V. I.;
Davydova, T. A.

Publication type:

Article

Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1138, doi. 10.1134/1.1513859

By:

Kosyachenko, L. A.;
Markov, A. V.;
Ostapov, S. É.;
Rarenko, I. M.;
Sklyarchuk, V. M.;
Sklyarchuk, Ye. F.

Publication type:

Article

Temperature Dependence of Conductance of Electrostatically Disordered Quasi-2D Semiconductor Systems Near an Insulator–Metal Percolation Transition.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1163, doi. 10.1134/1.1513863

By:

Davydov, A. B.;
Aronzon, B. A.;
Bakaushin, D. A.;
Vedeneev, A. S.

Publication type:

Article

Photoluminescence and Recombination Luminescence in Amorphous Molecular Semiconductors Doped with Organic Dyes.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1169, doi. 10.1134/1.1513864

By:

Davidenko, N. A.;
Studzinskiı, S. L.;
Derevyanko, N. A.;
Ishchenko, A. A.;
Skryshevskiı, Yu. A.;
Al-Kahdymi, A. J.

Publication type:

Article

Crystallization of Amorphous Hydrogenated Silicon Films Deposited under Various Conditions.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1180, doi. 10.1134/1.1513865

By:

Golikova, O. A.;
Bogdanova, E. V.;
Babakhodzhaev, U. S.

Publication type:

Article

Electroluminescence from Porous Silicon in the Cathodic Reduction of Persulfate Ions: Degree of Reversibility of the Tuning Effect.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1184, doi. 10.1134/1.1513866

By:

Saren, A. A.;
Kuznetsov, S. N.;
Pikulev, V. B.;
Gardin, Yu. E.;
Gurtov, V. A.

Publication type:

Article

Space Charge Limited Current in Porous Silicon and Anatase (TiO[sub 2]).

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1188, doi. 10.1134/1.1513867

By:

Lebedev, É. A.;
Dittrich, T.

Publication type:

Article

Influence of the Design and Material Parameters on the Current–Voltage Characteristics of Two-Island Single-Electron Chains.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1192, doi. 10.1134/1.1513868

By:

Abramov, I. I.;
Ignatenko, S. A.;
Novik, E. G.

Publication type:

Article