Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 8

Results: 25

Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe[sub 2] Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 870, doi. 10.1134/1.1393017

By:

Abdullaev, M. A.;
Magomedova, Dz. Kh.;
Gadzhieva, R. M.;
Terukov, E. I.;
Nikolaev, Yu. A.;
Rud’, Yu. V.;
Khokhlachev, P. P.

Publication type:

Article

The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 873, doi. 10.1134/1.1393018

By:

Jandieri, K. M.;
Kachlishvili, Z. S.

Publication type:

Article

Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 895, doi. 10.1134/1.1393023

By:

Zhuravlev, K. S.;
Gilinskiı, A. M.;
Tsarev, A. V.;
Nikolaenko, A. E.

Publication type:

Article

Optical Band Gap of Cd[sub 1 – ][sub x]Mn[sub x]Te and Zn[sub 1 – ][sub x]Mn[sub x]Te Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 900, doi. 10.1134/1.1393024

By:

Zhukovskiı, P. V.;
Partyka, Ya.;
Vengerek, P.;
Sidorenko, Yu. V.;
Shostak, Yu. A.;
Rodzik, A.

Publication type:

Article

Growth of Fractal Lithium Clusters in Germanium.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 861, doi. 10.1134/1.1393015

By:

Bulyarskiı, S. V.;
Svetukhin, V. V.;
Agafonova, O. V.;
Grishin, A. G.;
Il’in, P. A.

Publication type:

Article

Vibration Modes of Oxygen Dimers in Germanium.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 864, doi. 10.1134/1.1393016

By:

Litvinov, V. V.;
Murin, L. I.;
Lindström, L.;
Markevich, V. P.;
Klechko, A. A.

Publication type:

Article

Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 918, doi. 10.1134/1.1393027

By:

Shengurov, V. G.;
Svetlov, S. P.;
Chalkov, V. Yu.;
Maksimov, G. A.;
Krasil’nik, Z. F.;
Andreev, B. A.;
Stepikhova, M. V.;
Shengurov, D. V.;
Palmetshofer, L.;
Ellmer, H.

Publication type:

Article

Erratum: “Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing” [Semiconductors35 (3), 343 (2001)].

Published in:

2001

By:

Asryan, L. V.;
Suris, R. A.

Publication type:

Correction Notice

Preparation and Properties of Isotopically Pure Polycrystalline Silicon.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 877, doi. 10.1134/1.1393019

By:

Godisov, O. N.;
Kaliteevskiı, A. K.;
Korolev, V. I.;
Ber, B. Ya.;
Davydov, V. Yu.;
Kaliteevskiı, M. A.;
Kop’ev, P. S.

Publication type:

Article

Electrical Properties of Cd[sub x]Hg[sub 1 – ][sub x]Te/CdZnTe Heterostructures.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 880, doi. 10.1134/1.1393020

By:

Belov, A. G.;
Belogorokhov, A. I.;
Lakeenkov, V. M.

Publication type:

Article

Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 883, doi. 10.1134/1.1393021

By:

Vaksman, Yu. F.;
Nitsuk, Yu. A.;
Purtov, Yu. N.;
Shapkin, P. V.

Publication type:

Article

Origin of an Absorption Band Peaked at 5560cm[sup –1] and Related to Divacancies in Si[sub 1 – ][sub x]Ge[sub x].

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 890, doi. 10.1134/1.1393022

By:

Pomozov, Yu. V.;
Sosnin, M. G.;
Khirunenko, L. I.;
Abrosimov, N. V.;
Schröder, W.

Publication type:

Article

The Role of Lead in Growing Ga[sub 1 – ][sub X]In[sub X]As[sub Y]Sb[sub 1 – ][sub Y] Solid Solutions by Liquid-Phase Epitaxy.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 904, doi. 10.1134/1.1393025

By:

Voronina, T. I.;
Lagunova, T. S.;
Kunitsyna, E. V.;
Parkhomenko, Ya. A.;
Vasyukov, D. A.;
Yakovlev, Yu. P.

Publication type:

Article

Interface States and Deep-Level Centers in Silicon-on-Insulator Structures.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 912, doi. 10.1134/1.1393026

By:

Antonova, I. V.;
Stano, J.;
Nikolaev, D. V.;
Naumova, O. V.;
Popov, V. P.;
Skuratov, V. A.

Publication type:

Article

Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 924, doi. 10.1134/1.1393028

By:

Baidullaeva, A.;
Vlasenko, A. I.;
Kuznetsov, É. I.;
Lomovtsev, A. V.;
Mozol’, P. E.;
Smirnov, A. B.

Publication type:

Article

Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 932, doi. 10.1134/1.1393030

By:

Faleev, N. N.;
Musikhin, Yu. G.;
Suvorova, A. A.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Tabuchi, M.;
Takeda, Y.

Publication type:

Article

Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 927, doi. 10.1134/1.1393029

By:

Bondarenko, V. B.;
Kuz’min, M. V.;
Korablev, V. V.

Publication type:

Article

Optical Properties of Germanium Monolayers on Silicon.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 941, doi. 10.1134/1.1393031

By:

Burbaev, T. M.;
Zavaritskaya, T. N.;
Kurbatov, V. A.;
Mel’nik, N. N.;
Tsvetkov, V. A.;
Zhuravlev, K. S.;
Markov, V. A.;
Nikiforov, A. I.

Publication type:

Article

The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 947, doi. 10.1134/1.1393032

By:

Rakhimov, N.;
Babakhodzhaev, U.;
Mavlyanov, Kh.;
Ikramov, R.

Publication type:

Article

Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 949, doi. 10.1134/1.1393033

By:

Denisov, V. N.;
Mavrin, B. N.;
Karavanskiı, V. A.

Publication type:

Article

Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 953, doi. 10.1134/1.1393034

By:

Kazanskiı, A. G.;
Mell, H.;
Terukov, E. I.;
Forsh, P. A.

Publication type:

Article

X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 956, doi. 10.1134/1.1393035

By:

Mashin, A. I.;
Khokhlov, A. F.;
Domashevskaya, É. P.;
Terekhov, V. A.;
Mashin, N. I.

Publication type:

Article

Threshold Characteristics of λ = 1.55μm InGaAsP/InP Heterolasers.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 962, doi. 10.1134/1.1393036

By:

Zegrya, G. G.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Slipchenko, S. O.;
Tarasov, I. S.

Publication type:

Article

An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO[sub 2]-Laser Radiation.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 970, doi. 10.1134/1.1393037

By:

Tulanov, V. T.;
Siyabekov, Kh. B.;
Davletova, A. Sh.;
Ortaeva, K. A.

Publication type:

Article

A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 974, doi. 10.1134/1.1393038

By:

Volokobinskaya, N. I.;
Komarov, I. N.;
Matyukhina, T. V.;
Reshetnikov, V. I.;
Rush, A. A.;
Falina, I. V.;
Yastrebov, A. S.

Publication type:

Article