Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 6
Results: 27
II International Conference on Amorphous and Microcrystalline Semiconductors.
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- Semiconductors, 2001, v. 35, n. 6, p. 613, doi. 10.1134/1.1379388
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The Relation between Recombination at Interface States and the Anomalously Small Exponent of the Current–Illuminance Characteristic in Microcrystalline Silicon.
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- Semiconductors, 2001, v. 35, n. 6, p. 615, doi. 10.1134/1.1379389
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Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
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- Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390
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EXAFS Studies of the Local Atomic Structure of Nanocrystalline GaAs.
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- Semiconductors, 2001, v. 35, n. 6, p. 627, doi. 10.1134/1.1379391
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Physical Properties of Si[sub 20]Te[sub 80] Glasses with Various Structures and Their Use in Acoustooptic Devices.
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- Semiconductors, 2001, v. 35, n. 6, p. 630, doi. 10.1134/1.1379392
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Levels of Structural Modification of Noncrystalline Semiconductors and Limits of Their Applicability.
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- Semiconductors, 2001, v. 35, n. 6, p. 637, doi. 10.1134/1.1379393
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The Effect of Some Organic Addenda on the HOMO–LUMO Gap in C[sub 60] Fullerene.
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- Semiconductors, 2001, v. 35, n. 6, p. 643, doi. 10.1134/1.1379394
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Cooperative Generation of Coherent Phonons by Localized Excitations in Glasses.
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- Semiconductors, 2001, v. 35, n. 6, p. 648, doi. 10.1134/1.1379395
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Influence of a-Si:H Band Tails on the Occupation of Dangling-Bond States and on Photoconductivity.
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- Semiconductors, 2001, v. 35, n. 6, p. 656, doi. 10.1134/1.1379396
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The Meissner Effect in Copper-Containing Fullerides.
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- Semiconductors, 2001, v. 35, n. 6, p. 659
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X-ray Studies of Nanoporous Carbon Powders Produced from Silicon Carbide.
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- Semiconductors, 2001, v. 35, n. 6, p. 661, doi. 10.1134/1.1379398
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Effective Control over the Photoelectric Properties of Triphenylamine-containing Polyimides.
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- Semiconductors, 2001, v. 35, n. 6, p. 666, doi. 10.1134/1.1379399
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Low-Temperature Plasma-Enhanced Chemical Vapor Deposition of Carbon Films and Their Emission Properties.
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- Semiconductors, 2001, v. 35, n. 6, p. 669, doi. 10.1134/1.1379400
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Current Instability in a-Si:H Solar Cells after Their Exposure to Light.
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- Semiconductors, 2001, v. 35, n. 6, p. 674, doi. 10.1134/1.1379401
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High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors.
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- Semiconductors, 2001, v. 35, n. 6, p. 677
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Photonic Crystals with Tunable Band Gap Based on Filled and Inverted Opal–Silicon Composites.
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- Semiconductors, 2001, v. 35, n. 6, p. 680, doi. 10.1134/1.1379403
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Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.
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- Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404
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Polycrystalline Films of Gallium Nitride Grown by Magnetron Sputtering.
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- Semiconductors, 2001, v. 35, n. 6, p. 688, doi. 10.1134/1.1379405
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An Analysis of the Temperature Dependence of the Electron Mobility in the CdGeAs[sub 2] Single Crystals.
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- Semiconductors, 2001, v. 35, n. 6, p. 690, doi. 10.1134/1.1379406
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Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure Based on These Films.
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- Semiconductors, 2001, v. 35, n. 6, p. 695, doi. 10.1134/1.1379407
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Bi Impurity in PbSe.
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- Semiconductors, 2001, v. 35, n. 6, p. 700, doi. 10.1134/1.1379408
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Temperature Dependence of Plasma-Reflection Spectra of Bismuth–Antimony Crystals.
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- Semiconductors, 2001, v. 35, n. 6, p. 703, doi. 10.1134/1.1379409
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Changes in the Optical-Absorption Spectra of Transmutation-Doped GaAs as a Result of Annealing.
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- Semiconductors, 2001, v. 35, n. 6, p. 708
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CdTe Polycrystalline Surface Subjected to Pulsed Laser Irradiation.
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- Semiconductors, 2001, v. 35, n. 6, p. 714
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A Noncontact Electron-Probe Method for Measuring the Diffusion Length and the Lifetime of Minority Charge Carriers in Semiconductors.
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- Semiconductors, 2001, v. 35, n. 6, p. 718, doi. 10.1134/1.1379412
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Manifestations of Quantum Confinement in Semiconductor Structures with Wide Doped Wells.
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- Semiconductors, 2001, v. 35, n. 6, p. 723, doi. 10.1134/1.1379413
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Momentum Alignment and Spin Orientation of Photoexcited Electrons in GaAs in the Transition from Two- to Three-Dimensional Structures.
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- Semiconductors, 2001, v. 35, n. 6, p. 727, doi. 10.1134/1.1379414
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