Drift Mobility of Carriers in Porous Silicon.
- Published in:
- Semiconductors, 2001, v. 35, n. 5, p. 588, doi. 10.1134/1.1371627
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 5
Results: 24
1
2
The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films.
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- Semiconductors, 2001, v. 35, n. 5, p. 591, doi. 10.1134/1.1371628
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- Article
3
Oscillatory “Reactions” Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment.
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- Semiconductors, 2001, v. 35, n. 5, p. 491, doi. 10.1134/1.1371608
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- Article
4
Thermal Conductivity and the Wiedemann–Franz Relation in Melts of Indium and Gallium Antimonides.
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- Semiconductors, 2001, v. 35, n. 5, p. 499, doi. 10.1134/1.1371609
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- Article
5
Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers.
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- Semiconductors, 2001, v. 35, n. 5, p. 502, doi. 10.1134/1.1371610
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- Article
6
Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting with Electrons in a Semiconductor.
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- Semiconductors, 2001, v. 35, n. 5, p. 506, doi. 10.1134/1.1371611
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- Publication type:
- Article
7
Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen.
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- Semiconductors, 2001, v. 35, n. 5, p. 512, doi. 10.1134/1.1371612
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- Article
8
On the Origin of the Luminescence Band with hν[sub m] = 1.5133 eV in Gallium Arsenide.
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- Semiconductors, 2001, v. 35, n. 5, p. 516, doi. 10.1134/1.1371613
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- Article
9
BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum.
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- Semiconductors, 2001, v. 35, n. 5, p. 520, doi. 10.1134/1.1371614
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- Article
10
Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics.
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- Semiconductors, 2001, v. 35, n. 5, p. 525, doi. 10.1134/1.1371615
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- Publication type:
- Article
11
Mechanism of the Current Flow in Pd–(Heavily Doped p-Al[sub x]Ga[sub 1 – ][sub x]N) Ohmic Contact.
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- Semiconductors, 2001, v. 35, n. 5, p. 529, doi. 10.1134/1.1371616
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- Article
12
Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 5, p. 533, doi. 10.1134/1.1371617
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- Publication type:
- Article
13
An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers.
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- Semiconductors, 2001, v. 35, n. 5, p. 539, doi. 10.1134/1.1371618
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- Article
14
Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System.
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- Semiconductors, 2001, v. 35, n. 5, p. 543, doi. 10.1134/1.1371619
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- Publication type:
- Article
15
Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures.
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- Semiconductors, 2001, v. 35, n. 5, p. 550, doi. 10.1134/1.1371620
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- Publication type:
- Article
16
Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave.
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- Semiconductors, 2001, v. 35, n. 5, p. 554, doi. 10.1134/1.1371621
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- Article
17
Nonlinear Interaction of Waves in a Semiconductor Superlattice.
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- Semiconductors, 2001, v. 35, n. 5, p. 557, doi. 10.1134/1.1371622
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- Article
18
The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.
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- Semiconductors, 2001, v. 35, n. 5, p. 565
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- Publication type:
- Article
19
Electron Transport in Silicon Carbide Natural Superlattices under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects.
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- Semiconductors, 2001, v. 35, n. 5, p. 573, doi. 10.1134/1.1371624
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- Article
20
Silicon Network in a-Si:H Films Containing Ordered Inclusions.
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- Semiconductors, 2001, v. 35, n. 5, p. 579, doi. 10.1134/1.1371625
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- Article
21
Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules.
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- Semiconductors, 2001, v. 35, n. 5, p. 583, doi. 10.1134/1.1371626
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- Publication type:
- Article
22
Light Emitting Diodes for the Spectral Range λ = 3.3–4.3μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 2[sup 1]).
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- Semiconductors, 2001, v. 35, n. 5, p. 598, doi. 10.1134/1.1371629
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- Publication type:
- Article
23
A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor.
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- Semiconductors, 2001, v. 35, n. 5, p. 605, doi. 10.1134/1.1371630
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- Publication type:
- Article
24
Impact Ionization Wave Breakdown of Drift Step Recovery Diodes.
- Published in:
- Semiconductors, 2001, v. 35, n. 5, p. 608, doi. 10.1134/1.1371631
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- Publication type:
- Article