Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 5
Results: 24
Oscillatory “Reactions” Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment.
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- Semiconductors, 2001, v. 35, n. 5, p. 491, doi. 10.1134/1.1371608
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Thermal Conductivity and the Wiedemann–Franz Relation in Melts of Indium and Gallium Antimonides.
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- Semiconductors, 2001, v. 35, n. 5, p. 499, doi. 10.1134/1.1371609
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Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers.
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- Semiconductors, 2001, v. 35, n. 5, p. 502, doi. 10.1134/1.1371610
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Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting with Electrons in a Semiconductor.
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- Semiconductors, 2001, v. 35, n. 5, p. 506, doi. 10.1134/1.1371611
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Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen.
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- Semiconductors, 2001, v. 35, n. 5, p. 512, doi. 10.1134/1.1371612
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On the Origin of the Luminescence Band with hν[sub m] = 1.5133 eV in Gallium Arsenide.
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- Semiconductors, 2001, v. 35, n. 5, p. 516, doi. 10.1134/1.1371613
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BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum.
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- Semiconductors, 2001, v. 35, n. 5, p. 520, doi. 10.1134/1.1371614
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Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics.
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- Semiconductors, 2001, v. 35, n. 5, p. 525, doi. 10.1134/1.1371615
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Mechanism of the Current Flow in Pd–(Heavily Doped p-Al[sub x]Ga[sub 1 – ][sub x]N) Ohmic Contact.
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- Semiconductors, 2001, v. 35, n. 5, p. 529, doi. 10.1134/1.1371616
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Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 5, p. 533, doi. 10.1134/1.1371617
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An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers.
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- Semiconductors, 2001, v. 35, n. 5, p. 539, doi. 10.1134/1.1371618
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Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System.
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- Semiconductors, 2001, v. 35, n. 5, p. 543, doi. 10.1134/1.1371619
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- Article
Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures.
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- Semiconductors, 2001, v. 35, n. 5, p. 550, doi. 10.1134/1.1371620
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Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave.
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- Semiconductors, 2001, v. 35, n. 5, p. 554, doi. 10.1134/1.1371621
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Nonlinear Interaction of Waves in a Semiconductor Superlattice.
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- Semiconductors, 2001, v. 35, n. 5, p. 557, doi. 10.1134/1.1371622
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The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.
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- Semiconductors, 2001, v. 35, n. 5, p. 565
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Electron Transport in Silicon Carbide Natural Superlattices under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects.
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- Semiconductors, 2001, v. 35, n. 5, p. 573, doi. 10.1134/1.1371624
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Silicon Network in a-Si:H Films Containing Ordered Inclusions.
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- Semiconductors, 2001, v. 35, n. 5, p. 579, doi. 10.1134/1.1371625
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- Article
Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules.
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- Semiconductors, 2001, v. 35, n. 5, p. 583, doi. 10.1134/1.1371626
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- Article
Drift Mobility of Carriers in Porous Silicon.
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- Semiconductors, 2001, v. 35, n. 5, p. 588, doi. 10.1134/1.1371627
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The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films.
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- Semiconductors, 2001, v. 35, n. 5, p. 591, doi. 10.1134/1.1371628
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Light Emitting Diodes for the Spectral Range λ = 3.3–4.3μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 2[sup 1]).
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- Semiconductors, 2001, v. 35, n. 5, p. 598, doi. 10.1134/1.1371629
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A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor.
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- Semiconductors, 2001, v. 35, n. 5, p. 605, doi. 10.1134/1.1371630
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Impact Ionization Wave Breakdown of Drift Step Recovery Diodes.
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- Semiconductors, 2001, v. 35, n. 5, p. 608, doi. 10.1134/1.1371631
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