Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 3

Results: 20

Generation–Recombination Processes in Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 306, doi. 10.1134/1.1356153

By:

Volovichev, I. N.;
Gurevich, Yu. G.

Publication type:

Article

Heteroepitaxy of II–VI Compound Semiconductors on Cooled Substrates.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 279, doi. 10.1134/1.1356146

By:

Belyaev, A. P.;
Rubets, V. P.

Publication type:

Article

Capacitance–Voltage Characteristics of p–n Structures Based on (111)Si Doped with Erbium and Oxygen.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 316, doi. 10.1134/1.1356154

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Yakimenko, A. N.

Publication type:

Article

Electrical and Optical Properties of Pristine and Polymerized Fullerenes.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 243, doi. 10.1134/1.1356145

By:

Makarova, T. L.

Publication type:

Article

Negative Luminescence in p-InAsSbP/n-InAs Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 321, doi. 10.1134/1.1356155

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 347, doi. 10.1134/1.1356160

By:

Soshnikov, I. P.;
Gorbenko, O. M.;
Golubok, A. O.;
Ledentsov, N. N.

Publication type:

Article

Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 353, doi. 10.1134/1.1356161

By:

Kurova, I. A.;
Ormont, N. N.;
Terukov, E. I.;
Trapeznikova, I. N.;
Afanas’ev, V. P.;
Gudovskikh, A. S.

Publication type:

Article

Molecular-Dynamics Simulation of Structural Properties of Ge[sub 1 – ][sub x]Sn[sub x] Substitutional Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 283, doi. 10.1134/1.1356147

By:

Deıbuk, V. G.;
Korolyuk, Yu. G.

Publication type:

Article

Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 287, doi. 10.1134/1.1356148

By:

Matyushin, V. M.

Publication type:

Article

A New Magnetic Semiconductor Cd[sub 1 – ][sub x]Mn[sub x]GeP[sub 2].

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 291, doi. 10.1134/1.1356149

By:

Medvedkin, G. A.;
Ishibashi, T.;
Nishi, T.;
Sato, K.

Publication type:

Article

Temperature Dependence of a Magnetoresistance Effect in the Films of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 295, doi. 10.1134/1.1356150

By:

Kabanov, V. F.;
Karasev, S. A.;
Fedorenko, Ya. G.

Publication type:

Article

Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III–V Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 298, doi. 10.1134/1.1356151

By:

Borisenko, S. I.

Publication type:

Article

On the Stabilization of Electrical Properties of Compensated Silicon as a Result of Irradiation with [sup 60]Co Gamma-Ray Quanta.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 302, doi. 10.1134/1.1356152

By:

Yunusov, M. S.;
Karimov, M.;
Dzhalelov, M. A.

Publication type:

Article

Characterization of Electroluminescent Structures Based on Gallium Arsenide Ion-Implanted with Ytterbium and Oxygen.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 325, doi. 10.1134/1.1356156

By:

Palmer, D. W.;
Dravin, V. A.;
Konnov, V. M.;
Bobrova, E. A.;
Loıko, N. N.;
Chernook, S. G.;
Gippius, A. A.

Publication type:

Article

Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157

By:

Voronina, T. I.;
Zhurtanov, B. E.;
Lagunova, T. S.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Rozov, A. E.;
Yakovlev, Yu. P.

Publication type:

Article

Extension of the Frequency Range of the Noise Spectral Density in Silicon p–n Structures Irradiated with Gamma-Ray Quanta.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 338, doi. 10.1134/1.1356158

By:

Baranovskiı, O. K.;
Kuchinskiı, P. V.;
Lutkovskiı, V. M.;
Petrunin, A. P.;
Savenok, E. D.

Publication type:

Article

Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 343, doi. 10.1134/1.1356159

By:

Asryan, L. V.;
Suris, R. A.

Publication type:

Article

Optically Pumped Mid-Infrared InGaAs(Sb) LEDs.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 357, doi. 10.1134/1.1356162

By:

Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.;
Shustov, V. V.

Publication type:

Article

Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3μm.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 360, doi. 10.1134/1.1356163

By:

Imenkov, A. N.;
Kolchanova, N. M.;
Kubat, P.;
Moiseev, K. D.;
Civis, C.;
Yakovlev, Yu. P.

Publication type:

Article

Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 365, doi. 10.1134/1.1356164

By:

Livshits, D. A.;
Egorov, A. Yu.;
Kochnev, I. V.;
Kapitonov, V. A.;
Lantratov, V. M.;
Ledentsov, N. N.;
Nalyot, T. A.;
Tarasov, I. S.

Publication type:

Article