Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 3

Results: 20

Electrical and Optical Properties of Pristine and Polymerized Fullerenes.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 243, doi. 10.1134/1.1356145
By:
- Makarova, T. L.
Publication type:
Article
Heteroepitaxy of II–VI Compound Semiconductors on Cooled Substrates.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 279, doi. 10.1134/1.1356146
By:
- Belyaev, A. P.;
- Rubets, V. P.
Publication type:
Article
Molecular-Dynamics Simulation of Structural Properties of Ge[sub 1 – ][sub x]Sn[sub x] Substitutional Solid Solutions.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 283, doi. 10.1134/1.1356147
By:
- Deıbuk, V. G.;
- Korolyuk, Yu. G.
Publication type:
Article
Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 287, doi. 10.1134/1.1356148
By:
- Matyushin, V. M.
Publication type:
Article
A New Magnetic Semiconductor Cd[sub 1 – ][sub x]Mn[sub x]GeP[sub 2].
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 291, doi. 10.1134/1.1356149
By:
- Medvedkin, G. A.;
- Ishibashi, T.;
- Nishi, T.;
- Sato, K.
Publication type:
Article
Temperature Dependence of a Magnetoresistance Effect in the Films of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 295, doi. 10.1134/1.1356150
By:
- Kabanov, V. F.;
- Karasev, S. A.;
- Fedorenko, Ya. G.
Publication type:
Article
Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III–V Semiconductors.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 298, doi. 10.1134/1.1356151
By:
- Borisenko, S. I.
Publication type:
Article
On the Stabilization of Electrical Properties of Compensated Silicon as a Result of Irradiation with [sup 60]Co Gamma-Ray Quanta.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 302, doi. 10.1134/1.1356152
By:
- Yunusov, M. S.;
- Karimov, M.;
- Dzhalelov, M. A.
Publication type:
Article
Generation–Recombination Processes in Semiconductors.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 306, doi. 10.1134/1.1356153
By:
- Volovichev, I. N.;
- Gurevich, Yu. G.
Publication type:
Article
Capacitance–Voltage Characteristics of p–n Structures Based on (111)Si Doped with Erbium and Oxygen.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 316, doi. 10.1134/1.1356154
By:
- Emel’yanov, A. M.;
- Sobolev, N. A.;
- Yakimenko, A. N.
Publication type:
Article
Negative Luminescence in p-InAsSbP/n-InAs Diodes.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 321, doi. 10.1134/1.1356155
By:
- Aıdaraliev, M.;
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.
Publication type:
Article
Characterization of Electroluminescent Structures Based on Gallium Arsenide Ion-Implanted with Ytterbium and Oxygen.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 325, doi. 10.1134/1.1356156
By:
- Palmer, D. W.;
- Dravin, V. A.;
- Konnov, V. M.;
- Bobrova, E. A.;
- Loıko, N. N.;
- Chernook, S. G.;
- Gippius, A. A.
Publication type:
Article
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157
By:
- Voronina, T. I.;
- Zhurtanov, B. E.;
- Lagunova, T. S.;
- Mikhaılova, M. P.;
- Moiseev, K. D.;
- Rozov, A. E.;
- Yakovlev, Yu. P.
Publication type:
Article
Extension of the Frequency Range of the Noise Spectral Density in Silicon p–n Structures Irradiated with Gamma-Ray Quanta.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 338, doi. 10.1134/1.1356158
By:
- Baranovskiı, O. K.;
- Kuchinskiı, P. V.;
- Lutkovskiı, V. M.;
- Petrunin, A. P.;
- Savenok, E. D.
Publication type:
Article
Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 343, doi. 10.1134/1.1356159
By:
- Asryan, L. V.;
- Suris, R. A.
Publication type:
Article
Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 347, doi. 10.1134/1.1356160
By:
- Soshnikov, I. P.;
- Gorbenko, O. M.;
- Golubok, A. O.;
- Ledentsov, N. N.
Publication type:
Article
Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 353, doi. 10.1134/1.1356161
By:
- Kurova, I. A.;
- Ormont, N. N.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Afanas’ev, V. P.;
- Gudovskikh, A. S.
Publication type:
Article
Optically Pumped Mid-Infrared InGaAs(Sb) LEDs.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 357, doi. 10.1134/1.1356162
By:
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.;
- Shustov, V. V.
Publication type:
Article
Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3μm.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 360, doi. 10.1134/1.1356163
By:
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Kubat, P.;
- Moiseev, K. D.;
- Civis, C.;
- Yakovlev, Yu. P.
Publication type:
Article
Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 365, doi. 10.1134/1.1356164
By:
- Livshits, D. A.;
- Egorov, A. Yu.;
- Kochnev, I. V.;
- Kapitonov, V. A.;
- Lantratov, V. M.;
- Ledentsov, N. N.;
- Nalyot, T. A.;
- Tarasov, I. S.
Publication type:
Article