Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 10
Results: 22
Some Aspects of SiC CVD Epitaxy.
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- Semiconductors, 2001, v. 35, n. 10, p. 1117, doi. 10.1134/1.1410646
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- Article
The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation.
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- Semiconductors, 2001, v. 35, n. 10, p. 1120, doi. 10.1134/1.1410647
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- Article
Analysis of the Temperature Dependence of Electron Concentration in CdGeAs[sub 2] Single Crystals.
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- Semiconductors, 2001, v. 35, n. 10, p. 1123, doi. 10.1134/1.1410648
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Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon under Optical Illumination.
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- Semiconductors, 2001, v. 35, n. 10, p. 1126, doi. 10.1134/1.1410649
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- Article
Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum.
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- Semiconductors, 2001, v. 35, n. 10, p. 1132, doi. 10.1134/1.1410650
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Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals.
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- Semiconductors, 2001, v. 35, n. 10, p. 1135
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Electrical and Photoelectric Properties of Polycrystalline Textured CdTe.
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- Semiconductors, 2001, v. 35, n. 10, p. 1139, doi. 10.1134/1.1410652
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- Article
Density of Localized States in (Pb[sub 0.78]Sn[sub 0.22])[sub 0.95]In[sub 0.05]Te Solid Solutions.
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- Semiconductors, 2001, v. 35, n. 10, p. 1144, doi. 10.1134/1.1410653
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Interference of Polarized Beams near the Isotropic Point of the CdS Crystal.
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- Semiconductors, 2001, v. 35, n. 10, p. 1147, doi. 10.1134/1.1410654
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- Article
Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium.
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- Semiconductors, 2001, v. 35, n. 10, p. 1151, doi. 10.1134/1.1410655
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- Article
Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities.
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- Semiconductors, 2001, v. 35, n. 10, p. 1155, doi. 10.1134/1.1410656
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- Article
Thermoelectric Figure of Merit of a p–n Junction.
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- Semiconductors, 2001, v. 35, n. 10, p. 1161, doi. 10.1134/1.1410657
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- Article
The Influence of the Illumination Direction on the Field Distribution in High-Resistivity Metal–Semiconductor Structures.
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- Semiconductors, 2001, v. 35, n. 10, p. 1166, doi. 10.1134/1.1410658
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- Article
Effect of the Annealing Temperature on Erbium Ion Electroluminescence in Si:(Er,O) Diodes with (111) Substrate Orientation.
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- Semiconductors, 2001, v. 35, n. 10, p. 1171, doi. 10.1134/1.1410659
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- Article
Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy.
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- Semiconductors, 2001, v. 35, n. 10, p. 1175, doi. 10.1134/1.1410660
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- Article
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO[sub 2] Layers Implanted with Si[sup +] ions.
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- Semiconductors, 2001, v. 35, n. 10, p. 1182, doi. 10.1134/1.1410661
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Special Features of Photoelectric Properties of Nanostructured Films of Hydrogenated Silicon.
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- Semiconductors, 2001, v. 35, n. 10, p. 1187, doi. 10.1134/1.1410662
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- Article
Numerical Calculation of the Temperature Dependences of Photoconductivity in the p-type a-Si:H.
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- Semiconductors, 2001, v. 35, n. 10, p. 1191, doi. 10.1134/1.1410663
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- Article
Difference Mode Generation in Injection Lasers.
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- Semiconductors, 2001, v. 35, n. 10, p. 1203, doi. 10.1134/1.1410665
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- Article
High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3μm).
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- Semiconductors, 2001, v. 35, n. 10, p. 1208, doi. 10.1134/1.1410666
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Fabry–Perot a-Si:H/a-SiO[sub x]:H Microcavities with an Erbium-Doped a-Si:H Active Layer.
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- Semiconductors, 2001, v. 35, n. 10, p. 1213, doi. 10.1134/1.1410667
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Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films.
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- Semiconductors, 2001, v. 35, n. 10, p. 1197, doi. 10.1134/1.1410664
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- Article