Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 1
Results: 22
Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF[sub 2] Structures with Participation of Traps.
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- Semiconductors, 2001, v. 35, n. 1, p. 112, doi. 10.1134/1.1340300
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Resonance Tunneling of X-Electrons in AlAs/GaAs(111) Structures: Pseudopotential Calculations and Models.
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- Semiconductors, 2001, v. 35, n. 1, p. 106, doi. 10.1134/1.1340299
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Kinetics of Production of Oxygen-Containing Quenched-in Donors in Silicon and Their Nonuniform Distribution: An Analytical Solution.
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- Semiconductors, 2001, v. 35, n. 1, p. 10, doi. 10.1134/1.1340282
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An Avalanche Photodiode with Metal–Insulator–Semiconductor Properties.
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- Semiconductors, 2001, v. 35, n. 1, p. 117, doi. 10.1134/1.1340301
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Vladimir Mikhaılovich Arutyunyan (dedicated to his 60th birthday).
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- Semiconductors, 2001, v. 35, n. 1, p. 122, doi. 10.1134/1.1345011
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- Article
Mössbauer-Effect Study of Off-Center Atoms in IV–VI Semiconductors.
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- Semiconductors, 2001, v. 35, n. 1, p. 14, doi. 10.1134/1.1340283
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Magnetotransistors.
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- Semiconductors, 2001, v. 35, n. 1, p. 1, doi. 10.1134/1.1340281
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A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation.
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- Semiconductors, 2001, v. 35, n. 1, p. 20, doi. 10.1134/1.1340284
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- Article
A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe.
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- Semiconductors, 2001, v. 35, n. 1, p. 24, doi. 10.1134/1.1340285
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- Article
The Concentration Dependence of Acceptor-State Radii in p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals.
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- Semiconductors, 2001, v. 35, n. 1, p. 33, doi. 10.1134/1.1340286
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Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length in Semiconductor-Grade Silicon Ingots.
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- Semiconductors, 2001, v. 35, n. 1, p. 40, doi. 10.1134/1.1340287
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- Article
Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy.
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- Semiconductors, 2001, v. 35, n. 1, p. 48, doi. 10.1134/1.1340288
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- Article
Effect of the Charge-Carrier Drift in a Built-in Quasi-Electric Field on the Emission Spectrum of the Graded-Gap Semiconductors.
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- Semiconductors, 2001, v. 35, n. 1, p. 54, doi. 10.1134/1.1340289
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- Article
The Electronic Spectrum and Electrical Properties of Germanium with a Doubly Charged Gold Impurity on Both Sides of the L[sub 1]⇄Δ[sub 1] Intervalley Transition for Uniform Pressures of up to 7 GPa.
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- Semiconductors, 2001, v. 35, n. 1, p. 59, doi. 10.1134/1.1340290
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- Article
Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs.
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- Semiconductors, 2001, v. 35, n. 1, p. 67, doi. 10.1134/1.1340291
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- Article
On the Physical Nature of a Photomechanical Effect.
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- Semiconductors, 2001, v. 35, n. 1, p. 72, doi. 10.1134/1.1340292
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- Article
Excess Tunneling Currents in p-Si–n-3C-SiC Heterostructures.
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- Semiconductors, 2001, v. 35, n. 1, p. 77, doi. 10.1134/1.1340293
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- Article
Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal–Insulator–p-GaAs Structures.
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- Semiconductors, 2001, v. 35, n. 1, p. 80, doi. 10.1134/1.1340294
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- Article
Deep Levels Related to Gallium Atom Clusters in GaAs.
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- Semiconductors, 2001, v. 35, n. 1, p. 86, doi. 10.1134/1.1340295
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- Article
Vibrational Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe Superlattices in Terms of the Keating Model.
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- Semiconductors, 2001, v. 35, n. 1, p. 91, doi. 10.1134/1.1340296
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Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition.
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- Semiconductors, 2001, v. 35, n. 1, p. 93, doi. 10.1134/1.1340297
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Persistent Photoeffects in p–i–n GaAs/AlGaAs Heterostructures with Double Quantum Wells.
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- Semiconductors, 2001, v. 35, n. 1, p. 99, doi. 10.1134/1.1340298
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