Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure.
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- Semiconductors, 2000, v. 34, n. 6, p. 665, doi. 10.1134/1.1188051
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 6
Results: 26
1
2
Special Features of Generation–Recombination Processes in the p–n Junctions Based on HgMnTe.
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- Semiconductors, 2000, v. 34, n. 6, p. 668, doi. 10.1134/1.1188052
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- Publication type:
- Article
3
Investigation of the Influence of External Effects on the Behavior of Gold Impurity in Silicon.
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- Semiconductors, 2000, v. 34, n. 6, p. 615, doi. 10.1134/1.1188039
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- Publication type:
- Article
4
Internal Friction Related to Changes in the Shape of Small Inclusions.
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- Semiconductors, 2000, v. 34, n. 6, p. 618, doi. 10.1134/1.1188040
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- Publication type:
- Article
5
Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron.
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- Semiconductors, 2000, v. 34, n. 6, p. 629, doi. 10.1134/1.1188043
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- Publication type:
- Article
6
Photoelectric Phenomena in a-Si:H/p-CuInSe[sub 2] Heterostructures.
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- Semiconductors, 2000, v. 34, n. 6, p. 658, doi. 10.1134/1.1188049
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- Publication type:
- Article
7
Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to α-Particle Bombardment.
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- Semiconductors, 2000, v. 34, n. 6, p. 641, doi. 10.1134/1.1188045
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- Publication type:
- Article
8
Specifics of MOCVD Formation of In[sub x]Ga[sub 1 – ][sub x]N Inclusions in a GaN Matrix.
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- Semiconductors, 2000, v. 34, n. 6, p. 621, doi. 10.1134/1.1188041
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- Publication type:
- Article
9
Interband Emission of Cadmium Thiogallate.
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- Semiconductors, 2000, v. 34, n. 6, p. 626, doi. 10.1134/1.1188042
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- Publication type:
- Article
10
Equilibrium Energy Distribution of Localized Carriers in Disordered Semiconductors Subjected to an External Electric Field at Low Temperature.
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- Semiconductors, 2000, v. 34, n. 6, p. 655, doi. 10.1134/1.1188048
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- Publication type:
- Article
11
Multiphonon Capture of Charge Carriers by Deep-Level Centers in a Depletion Region of a Semiconductor.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 634, doi. 10.1134/1.1188044
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- Publication type:
- Article
12
Thermoelectric and Photoelectric Properties of the p–nCuInSe[sub 2]/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 662, doi. 10.1134/1.1188050
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- Publication type:
- Article
13
Charge Carrier Mobility in n-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals Subjected to Dynamic Ultrasonic Stressing.
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- Semiconductors, 2000, v. 34, n. 6, p. 644, doi. 10.1134/1.1188046
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- Publication type:
- Article
14
On the Origin of the Thermal–Field Asymmetry in Ionic Polarization/Depolarization of Oxide in Si-MOS Structures.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 650, doi. 10.1134/1.1188047
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- Publication type:
- Article
15
Influence of SiO[sub 2] Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 671, doi. 10.1134/1.1188053
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- Publication type:
- Article
16
Photosensitivity of a-Si:H/n-InSe Heterocontacts.
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- Semiconductors, 2000, v. 34, n. 6, p. 677, doi. 10.1134/1.1188054
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- Publication type:
- Article
17
Surface Magnetoplasma Waves in a Ferromagnetic Semiconductor and their Excitation by a Magnetic Dipole.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 680
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- Publication type:
- Article
18
Low-Temperature Photoluminescence and X-ray Diffractometry Study of In[sub x]Ga[sub 1 – ][sub x]As Quantum Wells.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 693, doi. 10.1134/1.1188057
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- Publication type:
- Article
19
Self-Ordered Microcavities Embedded in Ultrashallow Silicon p–n Junctions.
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- Semiconductors, 2000, v. 34, n. 6, p. 700, doi. 10.1134/1.1188058
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- Publication type:
- Article
20
Reflection Coefficient of a Semiconductor Superlattice Subjected to a Magnetic Field.
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- Semiconductors, 2000, v. 34, n. 6, p. 686, doi. 10.1134/1.1188056
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- Publication type:
- Article
21
Ballistic Conductance of a Quantum Wire at Finite Temperatures.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 712, doi. 10.1134/1.1188059
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- Publication type:
- Article
22
Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 717, doi. 10.1134/1.1188060
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- Publication type:
- Article
23
The Staebler–Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 723, doi. 10.1134/1.1188061
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- Publication type:
- Article
24
Modification of Optoelectronic Properties of Porous Silicon Produced in an Electrolyte Based on Heavy Water.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 728, doi. 10.1134/1.1188062
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- Publication type:
- Article
25
Optical and Electrical Properties of Porous Gallium Arsenide.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 732, doi. 10.1134/1.1188063
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- Publication type:
- Article
26
Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films.
- Published in:
- Semiconductors, 2000, v. 34, n. 6, p. 737, doi. 10.1134/1.1188064
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- Publication type:
- Article