Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 5

Results: 25

Study of Decay of Elastically Strained Germanium Film at the Silicon Surface.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 589, doi. 10.1134/1.1188033

By:

Zakurdaev, I. V.;
Baızer, M. V.;
Sadof’ev, S. Yu.;
Rzaev, M. M.

Publication type:

Article

Exciton Energy States and Photoluminescence Spectra of the Strained-Layer ZnS–ZnSe Superlattices.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 568

By:

Bondar’, N. V.;
Tishchenko, V. V.;
Brodin, M. S.

Publication type:

Article

On the Spectra of Electrons and Holes in an Open Spherical Nanoheterostructure (through the Example of GaAs/Al[sub x]Ga[sub 1 – ][sub x]As/GaAs).

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 583, doi. 10.1134/1.1188032

By:

Tkach, N. V.;
Holovatsky, V. A.;
Voıtsekhivska, O. N.

Publication type:

Article

Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034

By:

Maleev, N. A.;
Zhukov, A. E.;
Kovsh, A. R.;
Mikhrin, S. S.;
Ustinov, V. M.;
Bedarev, D. A.;
Volovik, B. V.;
Krestnikov, I. L.;
Kayander, I. N.;
Odnoblyudov, V. A.;
Suvorova, A. A.;
Tsatsul’nikov, A. F.;
Shernyakov, Yu. M.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Interaction between Copper and Antimony in a Solid Solution Based on Germanium with the Formation of a Charged Complex.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 495, doi. 10.1134/1.1188014

By:

Glazov, V. M.;
Potemkin, A. Ya.

Publication type:

Article

Special Features of the Sublimational Molecular-Beam Epitaxy of Si and Its Potentialities for Growing Si:Er/Si Structures.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 502, doi. 10.1134/1.1188015

By:

Kuznetsov, V. P.;
Rubtsova, R. A.

Publication type:

Article

The Influence of Electrically Inactive Impurities on the Formation of Donor Centers in Silicon Layers Implanted with Erbium.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 510, doi. 10.1134/1.1188016

By:

Aleksandrov, O. V.;
Zakhar’in, A. O.;
Sobolev, N. A.;
Nikolaev, Yu. A.

Publication type:

Article

Carbon-Stimulated Increase in the Concentration of Gallium Divacancies in Semi-Insulating Undoped GaAs Crystals.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 514, doi. 10.1134/1.1188017

By:

Glinchuk, K. D.;
Litovchenko, N. M.;
Prokhorovich, A. V.;
Stril’chuk, O. N.

Publication type:

Article

Effect of Diffusion Length and Surface Recombination on the Photopleochroism of Anisotropic Crystals.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 517, doi. 10.1134/1.1188018

By:

Medvedkin, G. A.

Publication type:

Article

Effect of Diffusion Length and Surface Recombination on the Polarization Quantum Efficiency of Anisotropic Crystals.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 521, doi. 10.1134/1.1188019

By:

Medvedkin, G. A.

Publication type:

Article

Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 525, doi. 10.1134/1.1188020

By:

Gadzhialiev, M. M.

Publication type:

Article

Influence of Annealing on the Dislocation-Related Electrical Conductivity of Germanium.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 527, doi. 10.1134/1.1188021

By:

Shevchenko, S. A.

Publication type:

Article

Optical Spectroscopy of Excitonic States in CuInSe[sub 2].

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 534, doi. 10.1134/1.1188022

By:

Mudryı, A. V.;
Yakushev, M. V.;
Tomlinson, R. D.;
Hill, A. E.;
Pilkington, R. D.;
Bodnar’, I. V.;
Viktorov, I. A.;
Gremenok, V. F.;
Shakin, I. A.;
Patuk, A. I.

Publication type:

Article

Effect of Uniaxial Deformation on Electrophysical Parameters of 6H-SiC p–n Structures.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 538, doi. 10.1134/1.1188023

By:

Lebedev, A. A.

Publication type:

Article

Deep-Level Centers in Undoped p-GaAs Layers Grown by Liquid Phase Epitaxy.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 541, doi. 10.1134/1.1188024

By:

Berman, L. S.;
Danil’chenko, V. G.;
Korol’kov, V. I.;
Soldatenkov, F. Yu.

Publication type:

Article

Photocapacitance Effect in a Monopolar Metal–Insulator–Semiconductor Capacitor at Low Temperatures.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 545, doi. 10.1134/1.1188025

By:

Penin, N. A.

Publication type:

Article

Conditions for Negative Differential Resistance and Switching in a Tunnel Diode under the Effect of an External Microwave Signal.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 550, doi. 10.1134/1.1188026

By:

Usanov, D. A.;
Skripal’, A. V.;
Ugryumova, N. V.;
Venig, S. B.;
Orlov, V. E.

Publication type:

Article

Hot Carrier Electromotive Force Caused by Surface Potential Modulation in a Strong Microwave Field.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 555, doi. 10.1134/1.1188027

By:

Gulyamov, G.;
Dadamirzaev, M. G.;
Boıdedaev, S. R.

Publication type:

Article

Photosensitivity of Thin-Film Structures Based on (CuInSe[sub 2])[sub x](2ZnSe)[sub 1 – ][sub x] Solid Solutions.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 558

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Bekimbetov, R. N.;
Gremenok, V. F.;
Bodnar’, I. V.;
Rusak, L. V.

Publication type:

Article

Shallow Acceptors in Strained Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures with Quantum Wells.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 563, doi. 10.1134/1.1188029

By:

Aleshkin, V. Ya.;
Andreev, B. A.;
Gavrilenko, V. I.;
Erofeeva, I. V.;
Kozlov, D. V.;
Kuznetsov, O. A.

Publication type:

Article

Zero-Phonon and Dipole Γ–X Electron Transitions in GaAs/AlAs Quantum-Well Heterostructures in a Longitudinal Electric Field.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 575, doi. 10.1134/1.1188031

By:

Aleshkin, V. Ya.;
Andronov, A. A.

Publication type:

Article

Current–Voltage Characteristics of Electroluminescent Me/(a-Si:H):Er/c-Si Structures Prepared by Magnetron Sputtering.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 598, doi. 10.1134/1.1188035

By:

Ivanov, P. A.;
Kon’kov, O. I.;
Terukov, E. I.

Publication type:

Article

Power Conversion Efficiency of Quantum Dot Laser Diodes.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038

By:

Zhukov, A. E.;
Kovsh, A. R.;
Mikhrin, S. S.;
Maleev, N. A.;
Odnoblyudov, V. A.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Kondrat’eva, E. Yu.;
Livshits, D. A.;
Tarasov, I. S.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Charge-Carrier Transport in a Double-Collector Magnetotransistor.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 603, doi. 10.1134/1.1188036

By:

Glauberman, M. A.;
Kozel, V. V.;
Nakhabin, A. V.

Publication type:

Article

A Method for Modulation of the Charge-Carrier Mobility in a Semiconductor.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 606, doi. 10.1134/1.1188037

By:

Novikov, V. V.;
Vardanyan, R. R.;
Pakhomov, É. E.

Publication type:

Article