Classification of Electrical Properties of Porous Silicon.
- Published in:
- Semiconductors, 2000, v. 34, n. 3, p. 353, doi. 10.1134/1.1187985
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 3
Results: 24
1
2
Absorption and Photoconductivity of Boron-Compensated μc-Si:H.
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- Semiconductors, 2000, v. 34, n. 3, p. 367, doi. 10.1134/1.1187988
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- Publication type:
- Article
3
Ultrasound-Induced Surface Hardening of Dislocation-Free Silicon.
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- Semiconductors, 2000, v. 34, n. 3, p. 251, doi. 10.1134/1.1187989
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- Publication type:
- Article
4
Photoelectrical and Electrical Properties of Polycrystalline Cd[sub x]Hg[sub 1 – ][sub x]Te Layers on GaAs Substrates.
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- Semiconductors, 2000, v. 34, n. 3, p. 255, doi. 10.1134/1.1187966
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- Publication type:
- Article
5
Kinetics of Attaining the Steady State of Hot Carrier Thermoelectric Power in a p–n Junction with Consideration for Lattice Heating.
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- Semiconductors, 2000, v. 34, n. 3, p. 260, doi. 10.1134/1.1187967
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- Publication type:
- Article
6
Structure of the Metastable Centers of the Group-III Atoms in IV–VI Crystals.
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- Semiconductors, 2000, v. 34, n. 3, p. 264, doi. 10.1134/1.1187968
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- Publication type:
- Article
7
A Mössbauer Study of a Two-Electron Acceptor Impurity of Zinc in Silicon.
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- Semiconductors, 2000, v. 34, n. 3, p. 269, doi. 10.1134/1.1187969
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- Publication type:
- Article
8
Multivalley Splitting of the Shallow Donor Energy Spectrum in Semiconductors with Diamond and Sphalerite Structures.
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- Semiconductors, 2000, v. 34, n. 3, p. 272, doi. 10.1134/1.1187970
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- Publication type:
- Article
9
Generation of Minority Charge Carriers at the Semiconductor Surface during Thermally Activated Ionic Depolarization of Metal–Insulator–Semiconductor Structures.
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- Semiconductors, 2000, v. 34, n. 3, p. 277, doi. 10.1134/1.1187971
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- Publication type:
- Article
10
Influence of Humidity and Hydrogen on the Charge Transport in p-InP Diode Structures with a Palladium Contact.
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- Semiconductors, 2000, v. 34, n. 3, p. 284, doi. 10.1134/1.1187972
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- Publication type:
- Article
11
Study of GaN:O Films and Related Heterostructures.
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- Semiconductors, 2000, v. 34, n. 3, p. 291, doi. 10.1134/1.1187973
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- Publication type:
- Article
12
Computer Study of Phosphorus Segregation Mechanisms at a SiO[sub 2]/Si(100) Interface.
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- Semiconductors, 2000, v. 34, n. 3, p. 296, doi. 10.1134/1.1187974
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- Publication type:
- Article
13
Influence of Electric-Field-Assisted Thermal Ionization on the Formation of the Schottky Barrier between Metal and Amorphous Silicon.
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- Semiconductors, 2000, v. 34, n. 3, p. 300, doi. 10.1134/1.1187975
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- Publication type:
- Article
14
The Generation–Recombination Current through a Contact of Metal with Amorphous Silicon under the Conditions of Thermal Field Ionization in a Space-Charge Region.
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- Semiconductors, 2000, v. 34, n. 3, p. 305, doi. 10.1134/1.1187976
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- Publication type:
- Article
15
Effect of Oxygen Adsorption on the Conductivity of Thin SnO[sub 2] Films.
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- Semiconductors, 2000, v. 34, n. 3, p. 308, doi. 10.1134/1.1187977
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- Publication type:
- Article
16
Special Features of Spatial Redistribution of Selenium Atoms Implanted in Silicon.
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- Semiconductors, 2000, v. 34, n. 3, p. 312, doi. 10.1134/1.1187978
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- Publication type:
- Article
17
Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures.
- Published in:
- Semiconductors, 2000, v. 34, n. 3, p. 319, doi. 10.1134/1.1187979
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- Publication type:
- Article
18
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
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- Publication type:
- Article
19
Two-Level Wave Functions of Electrons in Double-Barrier Quantum-Size Structures in an Electric Field with Finite Amplitude.
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- Semiconductors, 2000, v. 34, n. 3, p. 327, doi. 10.1134/1.1187981
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- Publication type:
- Article
20
Alternating Space Charge and Ambiguity of Quantum States in Double-Barrier Structures.
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- Semiconductors, 2000, v. 34, n. 3, p. 334, doi. 10.1134/1.1187982
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- Publication type:
- Article
21
Absorption Features in a-Si/ZrO[sub x] Nanostructures.
- Published in:
- Semiconductors, 2000, v. 34, n. 3, p. 344, doi. 10.1134/1.1187983
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- Publication type:
- Article
22
Transformation of an Unordered Structural Network in Amorphous Hydrogenated Silicon Films as a Result of Doping with Boron.
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- Semiconductors, 2000, v. 34, n. 3, p. 348, doi. 10.1134/1.1187984
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- Publication type:
- Article
23
Special Features of Relaxation of Metastable States Induced Thermally and by Photoexcitation in (a-Si:H):P Films.
- Published in:
- Semiconductors, 2000, v. 34, n. 3, p. 358, doi. 10.1134/1.1187986
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- Publication type:
- Article
24
Amorphous Boron Films with Enhanced Electrical Conductivity.
- Published in:
- Semiconductors, 2000, v. 34, n. 3, p. 363, doi. 10.1134/1.1187987
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- Publication type:
- Article