Influence of Au and Pt on the Concentration Profile of Mn in Si.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 161, doi. 10.1134/1.1187926
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 2
Results: 21
1
2
Control of the Excitation Conditions and the Parameters of Self-Sustained Oscillations of Current in Compensated Silicon Doped with Manganese.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 171, doi. 10.1134/1.1187929
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- Publication type:
- Article
3
Electrical Properties of Transmutation-Doped Indium Phosphide.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 150, doi. 10.1134/1.1187924
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- Publication type:
- Article
4
Electronic Properties of Variably Charged Defects in Crystalline Semiconductors.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 141, doi. 10.1134/1.1187922
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- Publication type:
- Article
5
Modification of Semiconductors with Proton Beams. A Review.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 123, doi. 10.1134/1.1187921
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- Publication type:
- Article
6
Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 146, doi. 10.1134/1.1187923
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- Publication type:
- Article
7
Physicochemical Properties of the Surface and Near-Surface Region of Epitaxial n-GaAs Layers Modified by Atomic Hydrogen.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 181, doi. 10.1134/1.1187931
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- Publication type:
- Article
8
The Effect of Ultrafast Low-Temperature Doping of Vitreous As–Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect).
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 213, doi. 10.1134/1.1187934
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- Publication type:
- Article
9
Thermal Acceptors in Irradiated Silicon.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 155
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- Publication type:
- Article
10
Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 189, doi. 10.1134/1.1187965
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- Publication type:
- Article
11
Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 163, doi. 10.1134/1.1187927
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- Publication type:
- Article
12
Contribution of the Electron Subsystem of Crystal into Reactions between Multicharge Centers in Semiconductors.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 166, doi. 10.1134/1.1187928
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- Publication type:
- Article
13
Reconstruction Transition (4×2) [long_right_arrow] (2×4) on the (001) Surfaces of InAs and GaAs.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 174, doi. 10.1134/1.1187930
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- Publication type:
- Article
14
On the Constriction of the Hall Current in the Corbino Disk under Quantum Hall Effect Conditions.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 205, doi. 10.1134/1.1187933
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- Publication type:
- Article
15
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 195, doi. 10.1134/1.1187932
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- Publication type:
- Article
16
Single-Mode InAsSb/InAsSbP Laser (λapprox. 3.2μm) Tunable over 100 Å.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 237, doi. 10.1134/1.1187939
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- Publication type:
- Article
17
Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 217, doi. 10.1134/1.1187935
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- Publication type:
- Article
18
Mechanisms of Transport and Injection of Carriers into a Porous Silicon: Electroluminescence in Electrolytes.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 221, doi. 10.1134/1.1187936
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- Publication type:
- Article
19
Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 233
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- Publication type:
- Article
20
Quantum-Mechanical Features of the Field Effect in Heterotransistors with Modulation- and δ-Doped Regions.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 228
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- Publication type:
- Article
21
6H-SiC Epilayers as Nuclear Particle Detectors.
- Published in:
- Semiconductors, 2000, v. 34, n. 2, p. 243, doi. 10.1134/1.1187940
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- Publication type:
- Article