Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 12

Results: 12

The Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy of Amorphous Carbon.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1355, doi. 10.1134/1.1331790
By:
- Ivanov-Omskiı, V. I.;
- Lodygin, A. B.;
- Yastrebov, S. G.
Publication type:
Article
Influence of Sn Resonance States on the Electrical Homogeneity of Bi[sub 2]Te[sub 3] Single Crystals.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1363, doi. 10.1134/1.1331791
By:
- Zhitinskaya, M. K.;
- Nemov, S. A.;
- Svechnikova, T. E.;
- Reinshaus, P.;
- Müller, E.
Publication type:
Article
The In/PbTe Barrier Structures with a Thin Intermediate Insulating Layer.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1365, doi. 10.1134/1.1331792
By:
- Aleksandrova, O. A.;
- Akhmedzhanov, A. T.;
- Bondokov, R. Ts.;
- Moshnikov, V. A.;
- Saunin, I. V.;
- Tairov, Yu. M.;
- Shtanov, V. I.;
- Yashina, L. V.
Publication type:
Article
The Formation Kinetics of a Strongly Absorbing State in a Bistable Excitonic Noncavity System.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1370, doi. 10.1134/1.1331793
By:
- Gudyma, Yu. V.
Publication type:
Article
Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1376, doi. 10.1134/1.1331794
By:
- Moiseev, K. D.;
- Toropov, A. A.;
- Terent’ev, Ya. V.;
- Mikhaılova, M. P.;
- Yakovlev, Yu. P.
Publication type:
Article
Type II Broken-Gap InAs/GaIn[sub 0.17]As[sub 0.22]Sb Heterostructures with Abrupt Planar Interface.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1381, doi. 10.1134/1.1331795
By:
- Moiseev, K. D.;
- Sitnikova, A. A.;
- Faleev, N. N.;
- Yakovlev, Yu. P.
Publication type:
Article
Special Features of Alpha-Particle Detection with Thin Semi-Insulating 6H-SiC Films.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1386, doi. 10.1134/1.1331796
By:
- Strokan, N. B.;
- Lebedev, A. A.;
- Ivanov, A. M.;
- Davydov, D. V.;
- Kozlovskiı, V. V.
Publication type:
Article
Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1391, doi. 10.1134/1.1331797
By:
- Ivanov-Omskiı, V. I.;
- Zvonareva, T. K.;
- Frolova, G. S.
Publication type:
Article
On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1397, doi. 10.1134/1.1331798
By:
- Leshko, A. Yu.;
- Lyutetskiı, A. V.;
- Pikhtin, N. A.;
- Skrynnikov, G. V.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Fetisova, N. V.
Publication type:
Article
Long-wavelength Light-Emitting Diodes (λ = 3.4–3.9μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1402, doi. 10.1134/1.1331799
By:
- Zotova, N. V.;
- Kizhaev, S. S.;
- Molchanov, S. S.;
- Popova, T. B.;
- Yakovlev, Yu. P.
Publication type:
Article
Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers.
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1406, doi. 10.1134/1.1331800
By:
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Kubat, P.;
- Civish, S.;
- Yakovlev, Yu. P.
Publication type:
Article
Sergeı Petrovich Solov’ev (1932–2000).
Published in:
Semiconductors, 2000, v. 34, n. 12, p. 1410, doi. 10.1134/1.1331801
By:
- Brudnyı, V. N.;
- Bublik, V. T.;
- Goshitskiı, B. N.;
- Emtsev, V. V.;
- Kazanskiı, Yu. A.;
- Konopleva, R. F.;
- Konobeev, Yu. V.;
- Kolin, N. G.;
- Kuz’min, I. I.;
- Mil’vidskiı, M. G.;
- Ozerov, R. P.;
- Osvenskiı, V. B.;
- Plotnikov, V. G.;
- Simonov, A. P.;
- Smirnov, L. S.;
- Kharchenko, V. A.
Publication type:
Article