Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 12

Results: 12

The Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy of Amorphous Carbon.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1355, doi. 10.1134/1.1331790

By:

Ivanov-Omskiı, V. I.;
Lodygin, A. B.;
Yastrebov, S. G.

Publication type:

Article

The In/PbTe Barrier Structures with a Thin Intermediate Insulating Layer.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1365, doi. 10.1134/1.1331792

By:

Aleksandrova, O. A.;
Akhmedzhanov, A. T.;
Bondokov, R. Ts.;
Moshnikov, V. A.;
Saunin, I. V.;
Tairov, Yu. M.;
Shtanov, V. I.;
Yashina, L. V.

Publication type:

Article

Influence of Sn Resonance States on the Electrical Homogeneity of Bi[sub 2]Te[sub 3] Single Crystals.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1363, doi. 10.1134/1.1331791

By:

Zhitinskaya, M. K.;
Nemov, S. A.;
Svechnikova, T. E.;
Reinshaus, P.;
Müller, E.

Publication type:

Article

The Formation Kinetics of a Strongly Absorbing State in a Bistable Excitonic Noncavity System.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1370, doi. 10.1134/1.1331793

By:

Gudyma, Yu. V.

Publication type:

Article

Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1376, doi. 10.1134/1.1331794

By:

Moiseev, K. D.;
Toropov, A. A.;
Terent’ev, Ya. V.;
Mikhaılova, M. P.;
Yakovlev, Yu. P.

Publication type:

Article

Type II Broken-Gap InAs/GaIn[sub 0.17]As[sub 0.22]Sb Heterostructures with Abrupt Planar Interface.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1381, doi. 10.1134/1.1331795

By:

Moiseev, K. D.;
Sitnikova, A. A.;
Faleev, N. N.;
Yakovlev, Yu. P.

Publication type:

Article

Special Features of Alpha-Particle Detection with Thin Semi-Insulating 6H-SiC Films.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1386, doi. 10.1134/1.1331796

By:

Strokan, N. B.;
Lebedev, A. A.;
Ivanov, A. M.;
Davydov, D. V.;
Kozlovskiı, V. V.

Publication type:

Article

Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1391, doi. 10.1134/1.1331797

By:

Ivanov-Omskiı, V. I.;
Zvonareva, T. K.;
Frolova, G. S.

Publication type:

Article

On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1397, doi. 10.1134/1.1331798

By:

Leshko, A. Yu.;
Lyutetskiı, A. V.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Sokolova, Z. N.;
Tarasov, I. S.;
Fetisova, N. V.

Publication type:

Article

Long-wavelength Light-Emitting Diodes (λ = 3.4–3.9μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1402, doi. 10.1134/1.1331799

By:

Zotova, N. V.;
Kizhaev, S. S.;
Molchanov, S. S.;
Popova, T. B.;
Yakovlev, Yu. P.

Publication type:

Article

Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1406, doi. 10.1134/1.1331800

By:

Imenkov, A. N.;
Kolchanova, N. M.;
Kubat, P.;
Civish, S.;
Yakovlev, Yu. P.

Publication type:

Article

Sergeı Petrovich Solov’ev (1932–2000).

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1410, doi. 10.1134/1.1331801

By:

Brudnyı, V. N.;
Bublik, V. T.;
Goshitskiı, B. N.;
Emtsev, V. V.;
Kazanskiı, Yu. A.;
Konopleva, R. F.;
Konobeev, Yu. V.;
Kolin, N. G.;
Kuz’min, I. I.;
Mil’vidskiı, M. G.;
Ozerov, R. P.;
Osvenskiı, V. B.;
Plotnikov, V. G.;
Simonov, A. P.;
Smirnov, L. S.;
Kharchenko, V. A.

Publication type:

Article