Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 10

Results: 26

Luminescent ZnS:Cu Films Prepared by Chemical Methods.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1128, doi. 10.1134/1.1317569

By:

Svechnikov, S. V.;
Zav’yalova, L. V.;
Roshchina, N. N.;
Rodionov, V. E.;
Khomchenko, V. S.;
Berezhinskiı, L. I.;
Prokopenko, I. V.;
Litvin, P. M.;
Litvin, O. S.;
Kolomzarov, Yu. V.;
Tsyrkunov, Yu. A.

Publication type:

Article

Special Features of Photoelectric Properties of p-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1137, doi. 10.1134/1.1317571

By:

Gasan-Zade, S. G.;
Staryı, S. V.;
Strikha, M. V.;
Shepel’skiı, G. A.

Publication type:

Article

Evolution of the Density of States during Phase Transitions in Films of Cadmium Sulfotellurides Synthesized under Profoundly Nonequilibrium Conditions.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1157, doi. 10.1134/1.1317575

By:

Belyaev, A. P.;
Rubets, V. P.;
Nuzhdin, M. Yu.

Publication type:

Article

Band Gap Estimation for a Triaminotrinitrobenzene Molecular Crystal by the Density-Functional Method.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1161, doi. 10.1134/1.1317576

By:

Grebenkin, K. F.;
Kutepov, A. L.

Publication type:

Article

Static and High-Frequency Transverse Electrical Conductivity of Isotypical Silicon Structures Obtained by Direct Bonding.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1163, doi. 10.1134/1.1317577

By:

Stuchinskiı, V. A.;
Kamaev, G. N.

Publication type:

Article

Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si[sub 1 – ][sub x]Ge[sub x] Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH[sub 4].

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1103, doi. 10.1134/1.1317564

By:

Orlov, L. K.;
Ivina, N. L.;
Potapov, A. V.

Publication type:

Article

Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1109, doi. 10.1134/1.1322870

By:

Kachlishvili, Z. S.;
Metreveli, N. K.

Publication type:

Article

A Verification of the Applicability of the Monovalent-Defect Model to the Description of Properties of the Vacancy–Oxygen Complex in Silicon.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1112, doi. 10.1134/1.1317565

By:

Makarenko, L. F.

Publication type:

Article

Space-Charge-Limited Currents in a Synthetic Semiconducting Diamond.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1116, doi. 10.1134/1.1317566

By:

Detchuev, Yu. A.;
Kryachkov, V. A.;
Pel’, É. G.;
Sanzharlinskiı, N. G.

Publication type:

Article

Optical Properties of Ca[sub 4]Ga[sub 2]S[sub 7]:Eu[sup 2+].

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1120, doi. 10.1134/1.1317567

By:

Tagiev, B. G.;
Kasumov, U. F.;
Musaeva, N. N.;
Dzhabbarov, R. B.;
Abushov, A. S.

Publication type:

Article

Dielectric Properties of Cd[sub 1 – ][sub x]Fe[sub x]Se Compounds.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1124

By:

Zukowski, P. V.;
Partyka, J.;
Wagierek, P.;
Shostak, Yu.;
Sidorenko, Yu.;
Rodzik, A.

Publication type:

Article

Influence of an Electric Field on the Strained State of a Heterostructure.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1172, doi. 10.1134/1.1317578

By:

Peleshchak, R. M.;
Lukiyanets, B. A.;
Zegrya, G. G.

Publication type:

Article

Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570

By:

Lebedev, A. A.;
Davydov, D. V.;
Savkina, N. S.;
Tregubova, A. S.;
Shcheglov, M. P.;
Yakimova, R.;
Syväjärvi, M.;
Janzén, E.

Publication type:

Article

Instability of DX-like Impurity Centers in PbTe:Ga at Annealing.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1144, doi. 10.1134/1.1317572

By:

Dolzhenko, D. E.;
Demin, V. N.;
Ivanchik, I. I.;
Khokhlov, D. R.

Publication type:

Article

Effect of Doping with Gadolinium on the Physical Properties of Hg[sub 3]In[sub 2]Te[sub 6].

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1147, doi. 10.1134/1.1317573

By:

Grushka, O. G.;
Gorleı, P. M.;
Bestsennyı, A. V.;
Grushka, Z. M.

Publication type:

Article

Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1151, doi. 10.1134/1.1317574

By:

Gutkin, A. A.;
Reshchikov, M. A.;
Sedov, V. E.

Publication type:

Article

Effect of Low-Temperature Interphase Charge Transport at the Si/SiO[sub 2] Interface on the Photoresponse of Silicon Barrier Structures.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1177, doi. 10.1134/1.1317579

By:

Bochkareva, N. I.;
Khorev, S. A.

Publication type:

Article

ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1186, doi. 10.1134/1.1317581

By:

Kozlovskiı, V. I.;
Trubenko, P. A.;
Korostelin, Yu. V.;
Roddatis, V. V.

Publication type:

Article

A Study of an Al–Ge[sub 3]N[sub 4]–Ge Structure by the Method of Photo-Capacitance–Voltage Characteristics.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1183, doi. 10.1134/1.1317580

By:

Dzhanelidze, R. B.;
Dzhanelidze, M. B.;
Katsiashvili, M. R.

Publication type:

Article

On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1193, doi. 10.1134/1.1317582

By:

Krevchik, V. D.;
Zaıtsev, R. V.;
Evstifeev, V. V.

Publication type:

Article

A Model of Conduction in Carbon Nanopipe Bundles and Films.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1199, doi. 10.1134/1.1317583

By:

Kaminskiı, V. É.

Publication type:

Article

Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1203, doi. 10.1134/1.1317584

By:

Zhuravlev, K. S.;
Kobitsky, A. Yu.

Publication type:

Article

Anomalous Dispersion, Differential Gain, and Dispersion of the α-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1207, doi. 10.1134/1.1317585

By:

Bogatov, A. P.;
Boltaseva, A. E.;
Drakin, A. E.;
Belkin, M. A.;
Konyaev, V. P.

Publication type:

Article

An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1214, doi. 10.1134/1.1317586

By:

Pshenaı-Severin, D. A.;
Ravich, Yu. I.;
Vedernikov, M. V.

Publication type:

Article

Injection Currents in Silicon Structures with Blocked Hopping Conduction.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1219, doi. 10.1134/1.1317587

By:

Esaev, D. G.;
Sinitsa, S. P.

Publication type:

Article

Charge Transport Mechanism and Photoelectric Characteristics of n[sup +]-Si–n-Si–Al[sub 2]O[sub 3]–Pd Diode Structures.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1224, doi. 10.1134/1.1317588

By:

Slobodchikov, S. V.;
Salikhov, Kh. M.;
Russu, E. V.

Publication type:

Article