Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 10
Results: 26
Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si[sub 1 – ][sub x]Ge[sub x] Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH[sub 4].
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- Semiconductors, 2000, v. 34, n. 10, p. 1103, doi. 10.1134/1.1317564
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- Article
Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering.
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- Semiconductors, 2000, v. 34, n. 10, p. 1109, doi. 10.1134/1.1322870
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- Article
A Verification of the Applicability of the Monovalent-Defect Model to the Description of Properties of the Vacancy–Oxygen Complex in Silicon.
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- Semiconductors, 2000, v. 34, n. 10, p. 1112, doi. 10.1134/1.1317565
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- Article
Space-Charge-Limited Currents in a Synthetic Semiconducting Diamond.
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- Semiconductors, 2000, v. 34, n. 10, p. 1116, doi. 10.1134/1.1317566
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- Article
Optical Properties of Ca[sub 4]Ga[sub 2]S[sub 7]:Eu[sup 2+].
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- Semiconductors, 2000, v. 34, n. 10, p. 1120, doi. 10.1134/1.1317567
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- Article
Dielectric Properties of Cd[sub 1 – ][sub x]Fe[sub x]Se Compounds.
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- Semiconductors, 2000, v. 34, n. 10, p. 1124
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Luminescent ZnS:Cu Films Prepared by Chemical Methods.
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- Semiconductors, 2000, v. 34, n. 10, p. 1128, doi. 10.1134/1.1317569
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- Article
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.
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- Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570
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- Article
Special Features of Photoelectric Properties of p-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress.
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- Semiconductors, 2000, v. 34, n. 10, p. 1137, doi. 10.1134/1.1317571
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- Article
Instability of DX-like Impurity Centers in PbTe:Ga at Annealing.
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- Semiconductors, 2000, v. 34, n. 10, p. 1144, doi. 10.1134/1.1317572
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- Article
Effect of Doping with Gadolinium on the Physical Properties of Hg[sub 3]In[sub 2]Te[sub 6].
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- Semiconductors, 2000, v. 34, n. 10, p. 1147, doi. 10.1134/1.1317573
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- Article
Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation.
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- Semiconductors, 2000, v. 34, n. 10, p. 1151, doi. 10.1134/1.1317574
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- Article
Evolution of the Density of States during Phase Transitions in Films of Cadmium Sulfotellurides Synthesized under Profoundly Nonequilibrium Conditions.
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- Semiconductors, 2000, v. 34, n. 10, p. 1157, doi. 10.1134/1.1317575
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- Article
Band Gap Estimation for a Triaminotrinitrobenzene Molecular Crystal by the Density-Functional Method.
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- Semiconductors, 2000, v. 34, n. 10, p. 1161, doi. 10.1134/1.1317576
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- Article
Static and High-Frequency Transverse Electrical Conductivity of Isotypical Silicon Structures Obtained by Direct Bonding.
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- Semiconductors, 2000, v. 34, n. 10, p. 1163, doi. 10.1134/1.1317577
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- Article
Influence of an Electric Field on the Strained State of a Heterostructure.
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- Semiconductors, 2000, v. 34, n. 10, p. 1172, doi. 10.1134/1.1317578
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- Article
Effect of Low-Temperature Interphase Charge Transport at the Si/SiO[sub 2] Interface on the Photoresponse of Silicon Barrier Structures.
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- Semiconductors, 2000, v. 34, n. 10, p. 1177, doi. 10.1134/1.1317579
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- Article
A Study of an Al–Ge[sub 3]N[sub 4]–Ge Structure by the Method of Photo-Capacitance–Voltage Characteristics.
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- Semiconductors, 2000, v. 34, n. 10, p. 1183, doi. 10.1134/1.1317580
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- Article
ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates.
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- Semiconductors, 2000, v. 34, n. 10, p. 1186, doi. 10.1134/1.1317581
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- Article
On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well.
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- Semiconductors, 2000, v. 34, n. 10, p. 1193, doi. 10.1134/1.1317582
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- Article
A Model of Conduction in Carbon Nanopipe Bundles and Films.
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- Semiconductors, 2000, v. 34, n. 10, p. 1199, doi. 10.1134/1.1317583
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- Article
Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide.
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- Semiconductors, 2000, v. 34, n. 10, p. 1203, doi. 10.1134/1.1317584
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- Article
Anomalous Dispersion, Differential Gain, and Dispersion of the α-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers.
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- Semiconductors, 2000, v. 34, n. 10, p. 1207, doi. 10.1134/1.1317585
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- Article
An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers.
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- Semiconductors, 2000, v. 34, n. 10, p. 1214, doi. 10.1134/1.1317586
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- Article
Injection Currents in Silicon Structures with Blocked Hopping Conduction.
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- Semiconductors, 2000, v. 34, n. 10, p. 1219, doi. 10.1134/1.1317587
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- Article
Charge Transport Mechanism and Photoelectric Characteristics of n[sup +]-Si–n-Si–Al[sub 2]O[sub 3]–Pd Diode Structures.
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- Semiconductors, 2000, v. 34, n. 10, p. 1224, doi. 10.1134/1.1317588
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- Article