Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 1

Results: 24

Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 11, doi. 10.1134/1.1187943

By:

Venger, E. F.;
Sadof’ev, Yu. G.;
Semenova, G. N.;
Korsunskaya, N. E.;
Klad’ko, V. P.;
Semtsiv, M. P.;
Borkovskaya, L. V.

Publication type:

Article

Current Transport in the Me–n–n[sup +] Schottky–Barrier Structures.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 108, doi. 10.1134/1.1187953

By:

Torkhov, N. A.;
Eremeev, S. V.

Publication type:

Article

Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 70, doi. 10.1134/1.1187948

By:

Ardyshev, V. M.;
Ardyshev, M. V.;
Khludkov, S. S.

Publication type:

Article

Light Emitting Diodes for the Spectral Range of λ = 3.3–4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 104, doi. 10.1134/1.1187963

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954

By:

Mikhrin, S. S.;
Zhukov, A. E.;
Kovsh, A. R.;
Maleev, N. A.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Kayander, I. N.;
Kondrat’eva, E. Yu.;
Livshits, D. A.;
Tarasov, I. S.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Bimberg, D.;
Alferov, Zh. I.

Publication type:

Article

Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 115, doi. 10.1134/1.1187964

By:

Lebedev, A. A.;
Davydov, D. V.

Publication type:

Article

Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 95, doi. 10.1134/1.1187961

By:

Lebedev, É. A.;
Tséndin, K. D.;
Kazakova, L. P.

Publication type:

Article

Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 17, doi. 10.1134/1.1187955

By:

Kvit, A. V.;
Klevkov, Yu. V.;
Medvedev, S. A.;
Bagaev, V. S.;
Perestoronin, A. V.;
Plotnikov, A. F.

Publication type:

Article

Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 1, doi. 10.1134/1.1187941

By:

Aleksandrov, O. V.;
Nikolaev, Yu. A.;
Sobolev, N. A.

Publication type:

Article

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944

By:

Kachurin, G. A.;
Rebohle, L.;
Tyschenko, I. E.;
Volodin, V. A.;
Voelskow, M.;
Skorupa, W.;
Froeb, H.

Publication type:

Article

Special Features of Electrical Activation of [sup 28]Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 27, doi. 10.1134/1.1187945

By:

Ardyshev, V. M.;
Ardyshev, M. V.;
Khludkov, S. S.

Publication type:

Article

Electrophysical Properties of Hg[sub 1 – ][sub x]Cd[sub x]Te Crystals under Hydrostatic Pressure.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 32, doi. 10.1134/1.1187956

By:

Virt, I. V.;
Prozorovskiı, V. D.;
Tsyutsyura, D. I.

Publication type:

Article

Band Structure and Spatial Charge Distribution in Al[sub x]Ga[sub 1 – ][sub x]N.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 35, doi. 10.1134/1.1187957

By:

Deıbuk, V. G.;
Voznyı, A. V.;
Sletov, M. M.

Publication type:

Article

Field Dependence of the Rate of Thermal Emission of Holes from the V[sub Ga]S[sub As] Complex in Gallium Arsenide.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 40, doi. 10.1134/1.1187958

By:

Bulyarskiı, S. V.;
Grushko, N. S.;
Zhukov, A. V.

Publication type:

Article

Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 45, doi. 10.1134/1.1187959

By:

Veınger, A. I.;
Zabrodskiı, A. G.;
Tisnek, T. V.

Publication type:

Article

Ellipsometric Study of Ultrathin Al[sub x]Ga[sub 1 – ][sub x]As Layers.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 56, doi. 10.1134/1.1187946

By:

Sukhorukova, M. V.;
Skorokhodova, I. A.;
Khvostikov, V. P.

Publication type:

Article

Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947

By:

Volodin, V. A.;
Efremov, M. D.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Bolotov, V. V.;
Sachkov, V. A.

Publication type:

Article

Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 67, doi. 10.1134/1.1187960

By:

Mamatkarimov, O. O.;
Zaınabidinov, S. Z.;
Abduraimov, A.;
Khamidov, R. Kh.;
Tuıchiev, U. A.

Publication type:

Article

Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001).

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 6, doi. 10.1134/1.1187942

By:

Vostokov, N. V.;
Gusev, S. A.;
Dolgov, I. V.;
Drozdov, Yu. N.;
Krasil’nik, Z. F.;
Lobanov, D. N.;
Moldavskaya, L. D.;
Novikov, A. V.;
Postnikov, V. V.;
Filatov, D. O.

Publication type:

Article

Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 73, doi. 10.1134/1.1187949

By:

Kuz’menko, R. V.;
Ganzha, A. V.;
Bochurova, O. V.;
Domashevskaya, É. P.;
Schreiber, J.;
Hildebrandt, S.;
Mo, S.;
Peiner, E.;
Schlachetzki, A.

Publication type:

Article

Energy Distribution of Localized States in Amorphous Hydrogenated Silicon.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 81, doi. 10.1134/1.1187950

By:

Kougiya, K. V.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si[sup +] Ions.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 87, doi. 10.1134/1.1187951

By:

Golikova, O. A.;
Kuznetsov, A. N.;
Kudoyarova, V. Kh.;
Petrov, I. N.;
Domashevskaya, É. P.;
Terekhov, V. A.

Publication type:

Article

The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 92, doi. 10.1134/1.1187952

By:

Terukov, E. I.;
Kudoyarova, V. Kh.;
Kon’kov, O. I.;
Konstantinova, E. A.;
Kamenev, B. V.;
Timoshenko, V. Yu.

Publication type:

Article

Growth of a-C:H and a-C:H<Cu> Films Produced by Magnetron Sputtering.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 98, doi. 10.1134/1.1187962

By:

Zvonareva, T. K.;
Ivanov-Omskiı, V. I.;
Nashchekin, A. V.;
Sharonova, L. V.

Publication type:

Article