Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 1

Results: 24

Light Emitting Diodes for the Spectral Range of λ = 3.3–4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 104, doi. 10.1134/1.1187963
By:
- Aıdaraliev, M.;
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.
Publication type:
Article
Current Transport in the Me–n–n[sup +] Schottky–Barrier Structures.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 108, doi. 10.1134/1.1187953
By:
- Torkhov, N. A.;
- Eremeev, S. V.
Publication type:
Article
Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 115, doi. 10.1134/1.1187964
By:
- Lebedev, A. A.;
- Davydov, D. V.
Publication type:
Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
By:
- Mikhrin, S. S.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Shernyakov, Yu. M.;
- Kayander, I. N.;
- Kondrat’eva, E. Yu.;
- Livshits, D. A.;
- Tarasov, I. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 11, doi. 10.1134/1.1187943
By:
- Venger, E. F.;
- Sadof’ev, Yu. G.;
- Semenova, G. N.;
- Korsunskaya, N. E.;
- Klad’ko, V. P.;
- Semtsiv, M. P.;
- Borkovskaya, L. V.
Publication type:
Article
Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 17, doi. 10.1134/1.1187955
By:
- Kvit, A. V.;
- Klevkov, Yu. V.;
- Medvedev, S. A.;
- Bagaev, V. S.;
- Perestoronin, A. V.;
- Plotnikov, A. F.
Publication type:
Article
Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 1, doi. 10.1134/1.1187941
By:
- Aleksandrov, O. V.;
- Nikolaev, Yu. A.;
- Sobolev, N. A.
Publication type:
Article
Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Tyschenko, I. E.;
- Volodin, V. A.;
- Voelskow, M.;
- Skorupa, W.;
- Froeb, H.
Publication type:
Article
Special Features of Electrical Activation of [sup 28]Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 27, doi. 10.1134/1.1187945
By:
- Ardyshev, V. M.;
- Ardyshev, M. V.;
- Khludkov, S. S.
Publication type:
Article
Electrophysical Properties of Hg[sub 1 – ][sub x]Cd[sub x]Te Crystals under Hydrostatic Pressure.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 32, doi. 10.1134/1.1187956
By:
- Virt, I. V.;
- Prozorovskiı, V. D.;
- Tsyutsyura, D. I.
Publication type:
Article
Band Structure and Spatial Charge Distribution in Al[sub x]Ga[sub 1 – ][sub x]N.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 35, doi. 10.1134/1.1187957
By:
- Deıbuk, V. G.;
- Voznyı, A. V.;
- Sletov, M. M.
Publication type:
Article
Field Dependence of the Rate of Thermal Emission of Holes from the V[sub Ga]S[sub As] Complex in Gallium Arsenide.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 40, doi. 10.1134/1.1187958
By:
- Bulyarskiı, S. V.;
- Grushko, N. S.;
- Zhukov, A. V.
Publication type:
Article
Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 45, doi. 10.1134/1.1187959
By:
- Veınger, A. I.;
- Zabrodskiı, A. G.;
- Tisnek, T. V.
Publication type:
Article
Ellipsometric Study of Ultrathin Al[sub x]Ga[sub 1 – ][sub x]As Layers.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 56, doi. 10.1134/1.1187946
By:
- Sukhorukova, M. V.;
- Skorokhodova, I. A.;
- Khvostikov, V. P.
Publication type:
Article
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947
By:
- Volodin, V. A.;
- Efremov, M. D.;
- Preobrazhenskiı, V. V.;
- Semyagin, B. R.;
- Bolotov, V. V.;
- Sachkov, V. A.
Publication type:
Article
Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 67, doi. 10.1134/1.1187960
By:
- Mamatkarimov, O. O.;
- Zaınabidinov, S. Z.;
- Abduraimov, A.;
- Khamidov, R. Kh.;
- Tuıchiev, U. A.
Publication type:
Article
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001).
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 6, doi. 10.1134/1.1187942
By:
- Vostokov, N. V.;
- Gusev, S. A.;
- Dolgov, I. V.;
- Drozdov, Yu. N.;
- Krasil’nik, Z. F.;
- Lobanov, D. N.;
- Moldavskaya, L. D.;
- Novikov, A. V.;
- Postnikov, V. V.;
- Filatov, D. O.
Publication type:
Article
Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 70, doi. 10.1134/1.1187948
By:
- Ardyshev, V. M.;
- Ardyshev, M. V.;
- Khludkov, S. S.
Publication type:
Article
Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 73, doi. 10.1134/1.1187949
By:
- Kuz’menko, R. V.;
- Ganzha, A. V.;
- Bochurova, O. V.;
- Domashevskaya, É. P.;
- Schreiber, J.;
- Hildebrandt, S.;
- Mo, S.;
- Peiner, E.;
- Schlachetzki, A.
Publication type:
Article
Energy Distribution of Localized States in Amorphous Hydrogenated Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 81, doi. 10.1134/1.1187950
By:
- Kougiya, K. V.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si[sup +] Ions.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 87, doi. 10.1134/1.1187951
By:
- Golikova, O. A.;
- Kuznetsov, A. N.;
- Kudoyarova, V. Kh.;
- Petrov, I. N.;
- Domashevskaya, É. P.;
- Terekhov, V. A.
Publication type:
Article
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 92, doi. 10.1134/1.1187952
By:
- Terukov, E. I.;
- Kudoyarova, V. Kh.;
- Kon’kov, O. I.;
- Konstantinova, E. A.;
- Kamenev, B. V.;
- Timoshenko, V. Yu.
Publication type:
Article
Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 95, doi. 10.1134/1.1187961
By:
- Lebedev, É. A.;
- Tséndin, K. D.;
- Kazakova, L. P.
Publication type:
Article
Growth of a-C:H and a-C:H<Cu> Films Produced by Magnetron Sputtering.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 98, doi. 10.1134/1.1187962
By:
- Zvonareva, T. K.;
- Ivanov-Omskiı, V. I.;
- Nashchekin, A. V.;
- Sharonova, L. V.
Publication type:
Article