Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 8

Results: 28

Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II).

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 915, doi. 10.1134/1.1187629

By:

Esaev, D. G.;
Sinitsa, S. P.;
Chernyavskiı, E. V.

Publication type:

Article

Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 821, doi. 10.1134/1.1187789

By:

Barabanenkov, M. Yu.;
Leonov, A. V.;
Mordkovich, V. N.;
Omelyanovskaya, N. M.

Publication type:

Article

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790

By:

Vilisova, M. D.;
Ivonin, I. V.;
Lavrentieva, L. G.;
Subach, S. V.;
Yakubenya, M. P.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Musikhin, Yu. G.;
Chaldyshev, V. V.

Publication type:

Article

Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](λ=1.2 μm).

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 830, doi. 10.1134/1.1187791

By:

Karachevtseva, M. V.;
Strakhov, V. A.;
Yaremenko, N. G.

Publication type:

Article

Determining the position of antimony impurity atoms in PbS by [sup 119]Sb([sup 119m]Sn) emission Mössbauer spectroscopy.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 836, doi. 10.1134/1.1187792

By:

Masterov, V. F.;
Nasredinov, F. S.;
Seregin, P. P.;
Seregin, N. P.;
Ermolaev, A. V.;
Bondarevskiı, S. I.

Publication type:

Article

Intrinsic photoconductivity of copper-doped gallium phosphide.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 838, doi. 10.1134/1.1187632

By:

Pribylov, N. N.;
Buslov, V. A.;
Rembeza, S. I.;
Spirin, A. I.;
Sushkov, S. A.

Publication type:

Article

Determining the energy levels of elementary primary defects in silicon.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 842, doi. 10.1134/1.1187793

By:

Luk’yanitsa, V. V.

Publication type:

Article

The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 845, doi. 10.1134/1.1187794

By:

Basheleishvili, Z. V.;
Pagava, T. A.

Publication type:

Article

Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 847, doi. 10.1134/1.1187795

By:

Kolin, N. G.;
Merkurisov, D. I.;
Solov’ev, S. P.

Publication type:

Article

Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 850, doi. 10.1134/1.1187796

By:

Sobolev, N. A.;
Emel’yanov, A. M.;
Nikolaev, Yu. A.

Publication type:

Article

Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 852, doi. 10.1134/1.1187797

By:

Goldman, E. I.;
Zhdan, A. G.;
Chucheva, G. V.

Publication type:

Article

Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 858, doi. 10.1134/1.1187798

By:

Zubkov, V. I.;
Mel’nik, M. A.;
Solomonov, A. V.;
Pikhtin, A. N.;
Bugge, F.

Publication type:

Article

Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 862, doi. 10.1134/1.1187799

By:

Arkhipov, V. I.;
Nikitenko, V. R.

Publication type:

Article

Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 865, doi. 10.1134/1.1187800

By:

Venger, E. F.;
Milenin, V. V.;
Ermolovich, I. B.;
Konakova, R. V.;
Ivanov, V. N.;
Voıtsikhovskiı, D. I.

Publication type:

Article

Photosensitivity of structures produced by heat treatment of CuInSe2 in different media.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 870

By:

Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 875, doi. 10.1134/1.1187802

By:

Lebedev, A. A.;
Davydov, D. V.;
Zelenin, V. V.;
Korogodskiı, M. L.

Publication type:

Article

Free ion transport in the insulator layer and electron–ion exchange at an insulator–semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 877, doi. 10.1134/1.1187803

By:

Gol’dman, E. I.;
Zhdan, A. G.;
Chucheva, G. V.

Publication type:

Article

Transformation of a metal–oxide–silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 883, doi. 10.1134/1.1187804

By:

Kareva, G. G.

Publication type:

Article

Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805

By:

Tsatsul’nikov, A. F.;
Bedarev, D. A.;
Volovik, B. V.;
Ivanov, S. V.;
Maksimov, M. V.;
Musikhin, Yu. G.;
Ledentsov, N. N.;
Mel’tser, B. Ya.;
Solov’ev, V. A.;
Kop’ev, P. S.;
Chernyshov, A. Yu.;
Belousov, M. V.

Publication type:

Article

Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 889, doi. 10.1134/1.1187625

By:

Suchalkin, S. D.;
Vasil’ev, Yu. B.;
Ivanov, S. V.;
Kop’ev, P. S.

Publication type:

Article

Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626

By:

Drichko, I. L.;
D’yakonov, A. M.;
Smirnov, I. Yu.;
Preobrazhenskiı, V. V.;
Toropov, A. I.

Publication type:

Article

New approach to the analysis of negative magnetostriction in two-dimensional structures.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 898, doi. 10.1134/1.1187920

By:

Min’kov, G. M.;
Negashev, S. A.;
Rut, O. É.;
Germanenko, A. V.;
Khrykin, O. I.;
Shashkin, V. I.;
Danil’tsev, V. M.

Publication type:

Article

Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627

By:

Volovik, B. V.;
Tsatsul’nikov, A. F.;
Bedarev, D. A.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Ledentsov, N. N.;
Maksimov, M. V.;
Maleev, N. A.;
Musikhin, Yu. G.;
Suvorova, A. A.;
Ustinov, V. M.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.;
Werner, P.

Publication type:

Article

Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 906, doi. 10.1134/1.1187634

By:

Voronkov, É. N.

Publication type:

Article

Multiple bonds in hydrogen-free amorphous silicon.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 911, doi. 10.1134/1.1187628

By:

Mashin, A. I.;
Khokhlov, A. F.

Publication type:

Article

Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5 μm.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 920, doi. 10.1134/1.1187633

By:

Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631

By:

Kovsh, A. R.;
Zhukov, A. E.;
Maleev, N. A.;
Mikhrin, S. S.;
Ustinov, V. M.;
Tsatsul’nikov, A. F.;
Maksimov, M. V.;
Volovik, B. V.;
Bedarev, D. A.;
Shernyakov, Yu. M.;
Kondrat’eva, E. Yu.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article