Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 8

Results: 28

The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 845, doi. 10.1134/1.1187794
By:
- Basheleishvili, Z. V.;
- Pagava, T. A.
Publication type:
Article
Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 821, doi. 10.1134/1.1187789
By:
- Barabanenkov, M. Yu.;
- Leonov, A. V.;
- Mordkovich, V. N.;
- Omelyanovskaya, N. M.
Publication type:
Article
Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](λ=1.2 μm).
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 830, doi. 10.1134/1.1187791
By:
- Karachevtseva, M. V.;
- Strakhov, V. A.;
- Yaremenko, N. G.
Publication type:
Article
Determining the position of antimony impurity atoms in PbS by [sup 119]Sb([sup 119m]Sn) emission Mössbauer spectroscopy.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 836, doi. 10.1134/1.1187792
By:
- Masterov, V. F.;
- Nasredinov, F. S.;
- Seregin, P. P.;
- Seregin, N. P.;
- Ermolaev, A. V.;
- Bondarevskiı, S. I.
Publication type:
Article
Intrinsic photoconductivity of copper-doped gallium phosphide.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 838, doi. 10.1134/1.1187632
By:
- Pribylov, N. N.;
- Buslov, V. A.;
- Rembeza, S. I.;
- Spirin, A. I.;
- Sushkov, S. A.
Publication type:
Article
Determining the energy levels of elementary primary defects in silicon.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 842, doi. 10.1134/1.1187793
By:
- Luk’yanitsa, V. V.
Publication type:
Article
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
By:
- Vilisova, M. D.;
- Ivonin, I. V.;
- Lavrentieva, L. G.;
- Subach, S. V.;
- Yakubenya, M. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.
Publication type:
Article
Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 847, doi. 10.1134/1.1187795
By:
- Kolin, N. G.;
- Merkurisov, D. I.;
- Solov’ev, S. P.
Publication type:
Article
Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 850, doi. 10.1134/1.1187796
By:
- Sobolev, N. A.;
- Emel’yanov, A. M.;
- Nikolaev, Yu. A.
Publication type:
Article
Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 852, doi. 10.1134/1.1187797
By:
- Goldman, E. I.;
- Zhdan, A. G.;
- Chucheva, G. V.
Publication type:
Article
Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 858, doi. 10.1134/1.1187798
By:
- Zubkov, V. I.;
- Mel’nik, M. A.;
- Solomonov, A. V.;
- Pikhtin, A. N.;
- Bugge, F.
Publication type:
Article
Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 862, doi. 10.1134/1.1187799
By:
- Arkhipov, V. I.;
- Nikitenko, V. R.
Publication type:
Article
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 865, doi. 10.1134/1.1187800
By:
- Venger, E. F.;
- Milenin, V. V.;
- Ermolovich, I. B.;
- Konakova, R. V.;
- Ivanov, V. N.;
- Voıtsikhovskiı, D. I.
Publication type:
Article
Photosensitivity of structures produced by heat treatment of CuInSe2 in different media.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 870
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 875, doi. 10.1134/1.1187802
By:
- Lebedev, A. A.;
- Davydov, D. V.;
- Zelenin, V. V.;
- Korogodskiı, M. L.
Publication type:
Article
Free ion transport in the insulator layer and electron–ion exchange at an insulator–semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 877, doi. 10.1134/1.1187803
By:
- Gol’dman, E. I.;
- Zhdan, A. G.;
- Chucheva, G. V.
Publication type:
Article
Transformation of a metal–oxide–silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 883, doi. 10.1134/1.1187804
By:
- Kareva, G. G.
Publication type:
Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
By:
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Ivanov, S. V.;
- Maksimov, M. V.;
- Musikhin, Yu. G.;
- Ledentsov, N. N.;
- Mel’tser, B. Ya.;
- Solov’ev, V. A.;
- Kop’ev, P. S.;
- Chernyshov, A. Yu.;
- Belousov, M. V.
Publication type:
Article
Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 889, doi. 10.1134/1.1187625
By:
- Suchalkin, S. D.;
- Vasil’ev, Yu. B.;
- Ivanov, S. V.;
- Kop’ev, P. S.
Publication type:
Article
Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626
By:
- Drichko, I. L.;
- D’yakonov, A. M.;
- Smirnov, I. Yu.;
- Preobrazhenskiı, V. V.;
- Toropov, A. I.
Publication type:
Article
New approach to the analysis of negative magnetostriction in two-dimensional structures.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 898, doi. 10.1134/1.1187920
By:
- Min’kov, G. M.;
- Negashev, S. A.;
- Rut, O. É.;
- Germanenko, A. V.;
- Khrykin, O. I.;
- Shashkin, V. I.;
- Danil’tsev, V. M.
Publication type:
Article
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
By:
- Volovik, B. V.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Suvorova, A. A.;
- Ustinov, V. M.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.;
- Werner, P.
Publication type:
Article
Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 906, doi. 10.1134/1.1187634
By:
- Voronkov, É. N.
Publication type:
Article
Multiple bonds in hydrogen-free amorphous silicon.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 911, doi. 10.1134/1.1187628
By:
- Mashin, A. I.;
- Khokhlov, A. F.
Publication type:
Article
Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II).
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 915, doi. 10.1134/1.1187629
By:
- Esaev, D. G.;
- Sinitsa, S. P.;
- Chernyavskiı, E. V.
Publication type:
Article
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5 μm.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 920, doi. 10.1134/1.1187633
By:
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.
Publication type:
Article
Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Tsatsul’nikov, A. F.;
- Maksimov, M. V.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Shernyakov, Yu. M.;
- Kondrat’eva, E. Yu.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article