Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 8
Results: 28
The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals.
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- Semiconductors, 1999, v. 33, n. 8, p. 845, doi. 10.1134/1.1187794
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Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation.
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- Semiconductors, 1999, v. 33, n. 8, p. 821, doi. 10.1134/1.1187789
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Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](λ=1.2 μm).
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- Semiconductors, 1999, v. 33, n. 8, p. 830, doi. 10.1134/1.1187791
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- Article
Determining the position of antimony impurity atoms in PbS by [sup 119]Sb([sup 119m]Sn) emission Mössbauer spectroscopy.
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- Semiconductors, 1999, v. 33, n. 8, p. 836, doi. 10.1134/1.1187792
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- Article
Intrinsic photoconductivity of copper-doped gallium phosphide.
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- Semiconductors, 1999, v. 33, n. 8, p. 838, doi. 10.1134/1.1187632
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- Article
Determining the energy levels of elementary primary defects in silicon.
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- Semiconductors, 1999, v. 33, n. 8, p. 842, doi. 10.1134/1.1187793
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- Article
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
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- Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
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Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor.
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- Semiconductors, 1999, v. 33, n. 8, p. 847, doi. 10.1134/1.1187795
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Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O.
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- Semiconductors, 1999, v. 33, n. 8, p. 850, doi. 10.1134/1.1187796
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- Article
Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary.
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- Semiconductors, 1999, v. 33, n. 8, p. 852, doi. 10.1134/1.1187797
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- Article
Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1-xAs/p-AlyGa1-yAs from C-V measurements.
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- Semiconductors, 1999, v. 33, n. 8, p. 858, doi. 10.1134/1.1187798
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- Article
Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors.
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- Semiconductors, 1999, v. 33, n. 8, p. 862, doi. 10.1134/1.1187799
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- Article
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide.
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- Semiconductors, 1999, v. 33, n. 8, p. 865, doi. 10.1134/1.1187800
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- Article
Photosensitivity of structures produced by heat treatment of CuInSe2 in different media.
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- Semiconductors, 1999, v. 33, n. 8, p. 870
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- Article
Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes.
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- Semiconductors, 1999, v. 33, n. 8, p. 875, doi. 10.1134/1.1187802
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- Article
Free ion transport in the insulator layer and electron–ion exchange at an insulator–semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 877, doi. 10.1134/1.1187803
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- Article
Transformation of a metal–oxide–silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states.
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- Semiconductors, 1999, v. 33, n. 8, p. 883, doi. 10.1134/1.1187804
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- Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
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- Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
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- Article
Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry.
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- Semiconductors, 1999, v. 33, n. 8, p. 889, doi. 10.1134/1.1187625
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- Article
Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.
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- Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626
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New approach to the analysis of negative magnetostriction in two-dimensional structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 898, doi. 10.1134/1.1187920
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Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
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- Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
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- Article
Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field.
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- Semiconductors, 1999, v. 33, n. 8, p. 906, doi. 10.1134/1.1187634
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Multiple bonds in hydrogen-free amorphous silicon.
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- Semiconductors, 1999, v. 33, n. 8, p. 911, doi. 10.1134/1.1187628
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Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II).
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- Semiconductors, 1999, v. 33, n. 8, p. 915, doi. 10.1134/1.1187629
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- Article
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5 μm.
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- Semiconductors, 1999, v. 33, n. 8, p. 920, doi. 10.1134/1.1187633
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Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.
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- Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630
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Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
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