Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 7

Results: 25

Influence of native defects on polytypism in SiC.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 707, doi. 10.1134/1.1187764

By:

Lebedev, A. A.

Publication type:

Article

Antistructural defects in PbTe-type semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 710, doi. 10.1134/1.1187765

By:

Masterov, V. F.;
Bondarevskiı, S. I.;
Nasredinov, F. S.;
Seregin, N. P.;
Seregin, P. P.

Publication type:

Article

Electrical properties of nuclear-doped indium antimonide.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 712, doi. 10.1134/1.1187766

By:

Kolin, N. G.;
Merkurisov, D. I.;
Solov’ev, S. P.

Publication type:

Article

Study of the polarization photoluminescence of thick epitaxial GaN layers.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 716, doi. 10.1134/1.1187767

By:

Zhilyaev, Yu. V.;
Krivolapchuk, V. V.;
Safronov, I. N.

Publication type:

Article

Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768

By:

Voronina, T. I.;
Lagunova, T. S.;
Moiseev, K. D.;
Rozov, A. E.;
Sipovskaya, M. A.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Hubbard energy of two-electron tin centers in PbS1-zTez solid solutions.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 726, doi. 10.1134/1.1187769

By:

Masterov, V. F.;
Nasredinov, F. S.;
Nemov, S. A.;
Seregin, P. P.;
Seregin, N. P.

Publication type:

Article

Investigation of MOVPE-grown GaN layers doped with As atoms.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770

By:

Tsatsul’nikov, A. F.;
Ber, B. Ya.;
Kartashova, A. P.;
Kudryavtsev, Yu. A.;
Ledentsov, N. N.;
Lundin, V. V.;
Maksimov, M. V.;
Sakharov, A. V.;
Usikov, A. S.;
Alfërov, Zh. I.;
Hoffmann, A.

Publication type:

Article

Photolectric effects in silicon switching structures utilizing rare-earth fluorides.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 731, doi. 10.1134/1.1187771

By:

Rozhkov, V. A.;
Shalimova, M. B.

Publication type:

Article

Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 736

By:

Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 740

By:

Bodnar’, I. V.;
Gremenok, V. F.;
Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 744, doi. 10.1134/1.1187774

By:

Kozlovskiı,, V. I.;
Krysa, A. B.;
Sadof’ev, Yu. G.;
Tur’yanskiı, A. G.

Publication type:

Article

Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 749, doi. 10.1134/1.1187775

By:

Reznikov, B. I.

Publication type:

Article

Heterojunctions utilizing CuInxGa1-xTe2 thin films.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 757

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Bekimbetov, R. N.;
Gremenok, V. F.;
Viktorov, I. A.;
Bodnar’, I. V.;
Krivolap, D. D.

Publication type:

Article

Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 761, doi. 10.1134/1.1187777

By:

Sinyavskiı, É. P.;
Sokovnich, S. M.

Publication type:

Article

Polar state of a particle with a degenerate band spectrum in a quantum dot.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 765, doi. 10.1134/1.1187778

By:

Ipatova, I. P.;
Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

Transport and optical properties of tin δ-doped GaAs structures.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 771, doi. 10.1134/1.1187779

By:

Kul’bachinskiı, V. A.;
Kytin, V. G.;
Lunin, R. A.;
Mokerov, V. G.;
Senichkin, A. P.;
Bugaev, A. S.;
Karuzskiı, A. L.;
Perestoronin, A. V.;
van Schaijk, R. T. F.;
Visser, A. de

Publication type:

Article

Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 779, doi. 10.1134/1.1187780

By:

Georgievskiı, A. M.;
Zaıtsev, S. V.;
Gordeev, N. Yu.;
Kopchatov, V. I.;
Karachinskiı, L. Ya.;
Novikov, I. I.;
Kop’ev, P. S.

Publication type:

Article

A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 804, doi. 10.1134/1.1187786

By:

Goldberg, Yu. A.;
Konstantinov, O. V.;
Lantratov, V. M.;
Obolensky, O. I.;
Petelina, T. V.;
Posse, E. A.;
Shvarts, M. Z.

Publication type:

Article

Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 807, doi. 10.1134/1.1187787

By:

Guk, E. G.;
Podlaskin, B. G.;
Tokranova, N. A.;
Voronkov, V. B.;
Kozlov, V. A.

Publication type:

Article

Photocapacitance relaxation in amorphous As[sub 2]Se[sub 3] films.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 792, doi. 10.1134/1.1187783

By:

Vasiliev, I. A.;
Shutov, S. D.

Publication type:

Article

Controlling the U[sup -]-center density in Se–As chalcogenide-glass semiconductors by doping with metals and halogens.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 795, doi. 10.1134/1.1187784

By:

Kazakova, L. P.;
Tsendin, K. D.

Publication type:

Article

Theory of photoresistors based on trapezoidal δ-doped superlattices.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 799, doi. 10.1134/1.1187785

By:

Osipov, V. V.;
Selyakov, A. Yu.;
Foygel, M.

Publication type:

Article

Electron-beam-induced conductivity in self-organized silicon quantum wells.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 782, doi. 10.1134/1.1187781

By:

Andronov, A. N.;
Robozerov, S. V.;
Bagraev, N. T.;
Klyachkin, L. E.;
Malyarenko, A. M.

Publication type:

Article

Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 788, doi. 10.1134/1.1187782

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Kovalenkov, O. V.;
Livshits, D. A.;
Sokolova, Z. N.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Polarization selection in VCSELs due to current carrier heating.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 813, doi. 10.1134/1.1187788

By:

Ryvkin, B. S.;
Georgievskiı, A. M.

Publication type:

Article