Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 7

Results: 25

Influence of native defects on polytypism in SiC.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 707, doi. 10.1134/1.1187764
By:
- Lebedev, A. A.
Publication type:
Article
Antistructural defects in PbTe-type semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 710, doi. 10.1134/1.1187765
By:
- Masterov, V. F.;
- Bondarevskiı, S. I.;
- Nasredinov, F. S.;
- Seregin, N. P.;
- Seregin, P. P.
Publication type:
Article
Electrical properties of nuclear-doped indium antimonide.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 712, doi. 10.1134/1.1187766
By:
- Kolin, N. G.;
- Merkurisov, D. I.;
- Solov’ev, S. P.
Publication type:
Article
Study of the polarization photoluminescence of thick epitaxial GaN layers.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 716, doi. 10.1134/1.1187767
By:
- Zhilyaev, Yu. V.;
- Krivolapchuk, V. V.;
- Safronov, I. N.
Publication type:
Article
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Moiseev, K. D.;
- Rozov, A. E.;
- Sipovskaya, M. A.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Hubbard energy of two-electron tin centers in PbS1-zTez solid solutions.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 726, doi. 10.1134/1.1187769
By:
- Masterov, V. F.;
- Nasredinov, F. S.;
- Nemov, S. A.;
- Seregin, P. P.;
- Seregin, N. P.
Publication type:
Article
Investigation of MOVPE-grown GaN layers doped with As atoms.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
By:
- Tsatsul’nikov, A. F.;
- Ber, B. Ya.;
- Kartashova, A. P.;
- Kudryavtsev, Yu. A.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Usikov, A. S.;
- Alfërov, Zh. I.;
- Hoffmann, A.
Publication type:
Article
Photolectric effects in silicon switching structures utilizing rare-earth fluorides.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 731, doi. 10.1134/1.1187771
By:
- Rozhkov, V. A.;
- Shalimova, M. B.
Publication type:
Article
Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 736
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 740
By:
- Bodnar’, I. V.;
- Gremenok, V. F.;
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 744, doi. 10.1134/1.1187774
By:
- Kozlovskiı,, V. I.;
- Krysa, A. B.;
- Sadof’ev, Yu. G.;
- Tur’yanskiı, A. G.
Publication type:
Article
Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 749, doi. 10.1134/1.1187775
By:
- Reznikov, B. I.
Publication type:
Article
Heterojunctions utilizing CuInxGa1-xTe2 thin films.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 757
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Bekimbetov, R. N.;
- Gremenok, V. F.;
- Viktorov, I. A.;
- Bodnar’, I. V.;
- Krivolap, D. D.
Publication type:
Article
Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 761, doi. 10.1134/1.1187777
By:
- Sinyavskiı, É. P.;
- Sokovnich, S. M.
Publication type:
Article
Polar state of a particle with a degenerate band spectrum in a quantum dot.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 765, doi. 10.1134/1.1187778
By:
- Ipatova, I. P.;
- Maslov, A. Yu.;
- Proshina, O. V.
Publication type:
Article
Transport and optical properties of tin δ-doped GaAs structures.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 771, doi. 10.1134/1.1187779
By:
- Kul’bachinskiı, V. A.;
- Kytin, V. G.;
- Lunin, R. A.;
- Mokerov, V. G.;
- Senichkin, A. P.;
- Bugaev, A. S.;
- Karuzskiı, A. L.;
- Perestoronin, A. V.;
- van Schaijk, R. T. F.;
- Visser, A. de
Publication type:
Article
Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 779, doi. 10.1134/1.1187780
By:
- Georgievskiı, A. M.;
- Zaıtsev, S. V.;
- Gordeev, N. Yu.;
- Kopchatov, V. I.;
- Karachinskiı, L. Ya.;
- Novikov, I. I.;
- Kop’ev, P. S.
Publication type:
Article
Electron-beam-induced conductivity in self-organized silicon quantum wells.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 782, doi. 10.1134/1.1187781
By:
- Andronov, A. N.;
- Robozerov, S. V.;
- Bagraev, N. T.;
- Klyachkin, L. E.;
- Malyarenko, A. M.
Publication type:
Article
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 788, doi. 10.1134/1.1187782
By:
- Vinokurov, D. A.;
- Kapitonov, V. A.;
- Kovalenkov, O. V.;
- Livshits, D. A.;
- Sokolova, Z. N.;
- Tarasov, I. S.;
- Alferov, Zh. I.
Publication type:
Article
Photocapacitance relaxation in amorphous As[sub 2]Se[sub 3] films.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 792, doi. 10.1134/1.1187783
By:
- Vasiliev, I. A.;
- Shutov, S. D.
Publication type:
Article
Controlling the U[sup -]-center density in Se–As chalcogenide-glass semiconductors by doping with metals and halogens.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 795, doi. 10.1134/1.1187784
By:
- Kazakova, L. P.;
- Tsendin, K. D.
Publication type:
Article
Theory of photoresistors based on trapezoidal δ-doped superlattices.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 799, doi. 10.1134/1.1187785
By:
- Osipov, V. V.;
- Selyakov, A. Yu.;
- Foygel, M.
Publication type:
Article
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 804, doi. 10.1134/1.1187786
By:
- Goldberg, Yu. A.;
- Konstantinov, O. V.;
- Lantratov, V. M.;
- Obolensky, O. I.;
- Petelina, T. V.;
- Posse, E. A.;
- Shvarts, M. Z.
Publication type:
Article
Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 807, doi. 10.1134/1.1187787
By:
- Guk, E. G.;
- Podlaskin, B. G.;
- Tokranova, N. A.;
- Voronkov, V. B.;
- Kozlov, V. A.
Publication type:
Article
Polarization selection in VCSELs due to current carrier heating.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 813, doi. 10.1134/1.1187788
By:
- Ryvkin, B. S.;
- Georgievskiı, A. M.
Publication type:
Article