Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 3

Results: 24

Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 265, doi. 10.1134/1.1187676
By:
- Guk, E. G.;
- Kamanin, A. V.;
- Shmidt, N. M.;
- Shuman, V. B.;
- Yurre, T. A.
Publication type:
Article
Dielectric properties of the semiconducting compounds Cd[sub 1-x]Fe[sub x]Te.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 276
By:
- Żukowski, P. V.;
- Partyka, J.;
- Wegierek, P.;
- Sidorenko, J. W.;
- Szostak, J. A.;
- Rodzik, A.
Publication type:
Article
Current-illumination characteristics of CdHgTe crystals with photoactive inclusions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 278, doi. 10.1134/1.1187677
By:
- Vlasenko, A. I.;
- Vlasenko, Z. K.
Publication type:
Article
Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 282, doi. 10.1134/1.1187678
By:
- Vlasenko, A. I.;
- Vlasenko, Z. K.
Publication type:
Article
Raman scattering spectroscopy of Zn[sub 1-x]Cd[sub x]Se films grown on GaAs substrates by molecular-beam epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 286, doi. 10.1134/1.1187679
By:
- Vodop’yanov, L. K.;
- Mel’nik, N. N.;
- Sadof’ev, Yu. G.
Publication type:
Article
Optical and photoelectric properties of Zn[sub 1-x]Fe[sub x]Te crystals.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 289, doi. 10.1134/1.1187680
By:
- Gnatenko, Yu. P.;
- Farina, I. A.;
- Gamernyk, R. V.
Publication type:
Article
Calculating the band structure of InSb[sub 1-x]Bi[sub x] solid solutions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 293
By:
- Deıbuk, V. G.;
- Viklyuk, Ya. I.;
- Rarenko, I. M.
Publication type:
Article
Effective charge carrier lifetime in CdHgTe variable-gap structures.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 297
By:
- Osadchiı, V. M.;
- Suslyakov, A. O.;
- Vasil’ev, V. V.;
- Dvoretsky, S. A.
Publication type:
Article
Polarization photosensitivity of GaN/Si heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 301, doi. 10.1134/1.1187683
By:
- Botnaruk, V. M.;
- Raevsky, S. D.;
- Belkov, V. V.;
- Zhilyaev, Yu. V.;
- Rud, Yu. V.;
- Fedorov, L. M.;
- Rud, V. Yu.
Publication type:
Article
Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 305, doi. 10.1134/1.1187684
By:
- Gerlovin, I. Ya.;
- Dolgikh, Yu. K.;
- Eliseev, S. A.;
- Efimov, Yu. P.;
- Nodokus, I. A.;
- Ovsyankin, V. V.;
- Petrov, V. V.;
- Ber, B. Ya.
Publication type:
Article
Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 308, doi. 10.1134/1.1187685
By:
- Goldman, E. I.;
- Zhdan, A. G.;
- Kukharskaya, N. F.
Publication type:
Article
Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 313, doi. 10.1134/1.1187686
By:
- Orlov, L. K.;
- Rubtsova, R. A.;
- Orlova, N. L.
Publication type:
Article
Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 318
By:
- Kul’bachinskiı, V. A.;
- Kytin, V. G.;
- Lunin, R. A.;
- Golikov, A. V.;
- Malkina, I. G.;
- Zvonkov, B. N.;
- Saf’yanov, Yu. N.
Publication type:
Article
Comparative study of the optical properties of porous silicon and the oxides SiO and SiO[sub 2].
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 323, doi. 10.1134/1.1187688
By:
- Obraztsov, A. N.;
- Timoshenko, V. Yu.;
- Okushi, H.;
- Watanabe, H.
Publication type:
Article
Photosensitive structures based on porous silicon.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 327, doi. 10.1134/1.1187689
By:
- Kaganovich, É. B.;
- Manoılov, É. G.;
- Svechnikov, S. V.
Publication type:
Article
Photoconductivity of amorphous hydrated silicon doped by ion implantation.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 332
By:
- Kazanskiı, A. G.;
- Ryzhkova, N. V.;
- Pietruszko, S. M.
Publication type:
Article
Electronic properties and structure of a-Si : H films with higher photosensitivity.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 335, doi. 10.1134/1.1187892
By:
- Golikova, O. A.;
- Kazanin, M. M.
Publication type:
Article
Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 339, doi. 10.1134/1.1187893
By:
- Slobodchikov, S. V.;
- Goryachev, D. N.;
- Salikhov, Kh. M.;
- Sreseli, O. M.
Publication type:
Article
Temperature dependence of the quantum efficiency of silicon p-n photodiodes.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 343, doi. 10.1134/1.1187691
By:
- Goldberg, Yu. A.;
- Zabrodsky, V. V.;
- Obolensky, O. I.;
- Petelina, T. V.;
- Suhanov, V. L.
Publication type:
Article
Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 345, doi. 10.1134/1.1187692
By:
- Maleev, N. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Volkov, V. V.;
- Kokorev, M. F.
Publication type:
Article
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 350, doi. 10.1134/1.1187693
By:
- Zegrya, G. G.;
- Mikhaılova, M. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Moiseev, K. D.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 355, doi. 10.1134/1.1187694
By:
- Zhurtanov, B. E.;
- Moiseev, K. D.;
- Mikhaılova, M. P.;
- Voronina, T. I.;
- Stoyanov, N. D.;
- Yakovlev, Yu. P.
Publication type:
Article
Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 359, doi. 10.1134/1.1187695
By:
- Astrova, E. V.;
- Voronkov, V. B.;
- Lebedev, A. A.;
- Lodygin, A. N.;
- Remenyuk, A. D.
Publication type:
Article
Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter.
Published in:
Semiconductors, 1999, v. 33, n. 3, p. 366, doi. 10.1134/1.1187696
By:
- Babichev, G. G.;
- Kozlovskiı, S. I.;
- Romanov, V. A.
Publication type:
Article