Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 12

Results: 17

Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1304, doi. 10.1134/1.1187913

By:

Andreev, A. D.;
Lipovskiı, A. A.

Publication type:

Article

Position of the Fermi level on an indium arsenide surface treated in sulfur vapor.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1301, doi. 10.1134/1.1187912

By:

Bezryadin, N. N.;
Tatokhin, E. A.;
Budanov, A. V.;
Linnik, A. V.;
Arsent’ev, I. N.

Publication type:

Article

Nonpolarizing radiation detectors based on wide-gap semiconductor crystals.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1328, doi. 10.1134/1.1187919

By:

Kasherininov, P. G.;
Lodygin, A. N.;
Martynov, S. S.;
Khrunov, V. S.

Publication type:

Article

Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1265, doi. 10.1134/1.1187903

By:

Kozlovskiı, V. V.;
Kozlov, V. A.

Publication type:

Article

Superradiance in semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1309, doi. 10.1134/1.1187914

By:

Zaıtsev, S. V.;
Graham, L. A.;
Huffaker, D. L.;
Gordeev, N. Yu.;
Kopchatov, V. I.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Kop’ev, P. S.

Publication type:

Article

Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1267, doi. 10.1134/1.1187904

By:

Vaıpolin, A. A.;
Rud’, Yu. V.;
Ushakova, T. N.;
Rud’, V. Yu.

Publication type:

Article

Behavior of manganese impurities in Hg3In2Te6.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1272, doi. 10.1134/1.1187905

By:

Grushka, O. G.;
Grushka, Z. M.;
Frasunyak, V. M.;
Gerasimenko, V. S.

Publication type:

Article

Photoelectric properties of Hg[sub 1-x]Cd[sub x]Te single crystals grown from the vapor phase.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1276, doi. 10.1134/1.1187906

By:

Varshava, S. S.;
Kurilo, I. V.;
Virt, I. S.;
Tsyutsyura, D. I.

Publication type:

Article

Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion).

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1279, doi. 10.1134/1.1187907

By:

Neımash, V. B.;
Puzenko, E. A.;
Kabaldin, A. N.;
Kraıchinskiı, A. N.;
Kras’ko, N. N.

Publication type:

Article

Donor-acceptor photoluminescence of weakly compensated GaN:Mg.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1284, doi. 10.1134/1.1187908

By:

Nekrasov, V. Yu.;
Belyakov, L. V.;
Sreseli, O. M.;
Zinov’ev, N. N.

Publication type:

Article

Cascade capture of electrons by dislocations in many-valley semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1291, doi. 10.1134/1.1187909

By:

Veliev, Z. A.

Publication type:

Article

Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1297, doi. 10.1134/1.1187911

By:

Vyazovskiı, M. V.;
Syrodoev, G. A.

Publication type:

Article

Electrical properties of Hg[sub 1-x]Mn[sub x]Te-based photodiodes.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1293, doi. 10.1134/1.1187910

By:

Kosyachenko, L. A.;
Rarenko, I. M.;
Bodnaruk, O. A.;
Weiguo, Sun

Publication type:

Article

Effect of γ irradiation on the photoluminescence kinetics of porous silicon.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1315, doi. 10.1134/1.1187915

By:

Agekyan, V. F.;
Stepanov, Yu. A.;
Emtsev, V. V.;
Lebedev, A. A.;
Poloskin, D. S.;
Remenyuk, A. D.

Publication type:

Article

Photodetectors based on osmium-doped silicon.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1318, doi. 10.1134/1.1187916

By:

Yunusov, M. S.;
Muminov, R. A.;
Nurkuziev, G.;
Gapparov, N.;
Kholboev, A.

Publication type:

Article

Effect of liquid dielectrics on the efficiency of silicon solar cells.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1320, doi. 10.1134/1.1187917

By:

Abramyan, Yu. A.;
Karamyan, G. G.;
Murodyan, A. A.;
Stafeev, V. I.;
Serago, V. I.

Publication type:

Article

Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm.

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1322, doi. 10.1134/1.1187918

By:

Danilova, A. P.;
Imenkov, A. N.;
Kolchanova, N. M.;
Sherstnev, V. V.;
Yakovlev, Yu. P.;
Civis, S.

Publication type:

Article