Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 12
Results: 17
Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction.
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- Semiconductors, 1999, v. 33, n. 12, p. 1267, doi. 10.1134/1.1187904
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Electrical properties of Hg[sub 1-x]Mn[sub x]Te-based photodiodes.
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- Semiconductors, 1999, v. 33, n. 12, p. 1293, doi. 10.1134/1.1187910
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- Article
Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation.
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- Semiconductors, 1999, v. 33, n. 12, p. 1265, doi. 10.1134/1.1187903
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Photoelectric properties of Hg[sub 1-x]Cd[sub x]Te single crystals grown from the vapor phase.
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- Semiconductors, 1999, v. 33, n. 12, p. 1276, doi. 10.1134/1.1187906
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- Article
Position of the Fermi level on an indium arsenide surface treated in sulfur vapor.
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- Semiconductors, 1999, v. 33, n. 12, p. 1301, doi. 10.1134/1.1187912
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- Article
Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe.
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- Semiconductors, 1999, v. 33, n. 12, p. 1304, doi. 10.1134/1.1187913
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- Article
Cascade capture of electrons by dislocations in many-valley semiconductors.
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- Semiconductors, 1999, v. 33, n. 12, p. 1291, doi. 10.1134/1.1187909
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- Article
Behavior of manganese impurities in Hg3In2Te6.
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- Semiconductors, 1999, v. 33, n. 12, p. 1272, doi. 10.1134/1.1187905
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- Article
Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice.
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- Semiconductors, 1999, v. 33, n. 12, p. 1297, doi. 10.1134/1.1187911
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- Article
Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion).
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- Semiconductors, 1999, v. 33, n. 12, p. 1279, doi. 10.1134/1.1187907
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- Article
Donor-acceptor photoluminescence of weakly compensated GaN:Mg.
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- Semiconductors, 1999, v. 33, n. 12, p. 1284, doi. 10.1134/1.1187908
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- Article
Superradiance in semiconductors.
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- Semiconductors, 1999, v. 33, n. 12, p. 1309, doi. 10.1134/1.1187914
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- Article
Effect of γ irradiation on the photoluminescence kinetics of porous silicon.
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- Semiconductors, 1999, v. 33, n. 12, p. 1315, doi. 10.1134/1.1187915
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- Article
Photodetectors based on osmium-doped silicon.
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- Semiconductors, 1999, v. 33, n. 12, p. 1318, doi. 10.1134/1.1187916
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- Article
Effect of liquid dielectrics on the efficiency of silicon solar cells.
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- Semiconductors, 1999, v. 33, n. 12, p. 1320, doi. 10.1134/1.1187917
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- Article
Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm.
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- Semiconductors, 1999, v. 33, n. 12, p. 1322, doi. 10.1134/1.1187918
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- Article
Nonpolarizing radiation detectors based on wide-gap semiconductor crystals.
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- Semiconductors, 1999, v. 33, n. 12, p. 1328, doi. 10.1134/1.1187919
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- Article