Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 11

Results: 23

Spatially inhomogeneous oxygen precipitation in silicon.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1157, doi. 10.1134/1.1187839

By:

Bulyarskiı, S. V.;
Svetukhin, V. V.;
Prikhod’ko, O. V.

Publication type:

Article

Enhanced formation of thermal donors in irradiated germanium: local vibrational mode spectroscopy.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1163, doi. 10.1134/1.1187840

By:

Klechko, A. A.;
Litvinov, V. V.;
Markevich, V. P.;
Murin, L. I.

Publication type:

Article

Radiation defects in semiconductors under hydrostatic pressure.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1166, doi. 10.1134/1.1187841

By:

Brudnyı, V.N.

Publication type:

Article

Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1171, doi. 10.1134/1.1187842

By:

Vlasenko, A. I.;
Vlasenko, Z. K.;
Lyubchenko, A. V.

Publication type:

Article

The electron density of semiconductors with charged dislocations placed in external fields.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1175, doi. 10.1134/1.1187843

By:

Veliev, Z. A.

Publication type:

Article

Activation of impurities in ZnSe crystals, stimulated by a laser shock wave.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1178, doi. 10.1134/1.1187844

By:

Baıdullaeva, A.;
Vlasenko, A. I.;
Gorkovenko, B. L.;
Mozol’, P. E.

Publication type:

Article

Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1182, doi. 10.1134/1.1187845

By:

Subashiev, A. V.;
Mamaev, Yu. A.;
Oskotskiı, B. D.;
Yashin, Yu. P.;
Kalevich, V. K.

Publication type:

Article

Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1188, doi. 10.1134/1.1187846

By:

Ballandovich, V. S.

Publication type:

Article

Physical properties of CdGeAs[sub 2] crystals grown by solid-state synthesis.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1193

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Ushakova, T. N.

Publication type:

Article

Change in the energy of Jahn–Teller configurations of vacancy–donor complexes induced by uniaxial strain.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1196, doi. 10.1134/1.1187848

By:

Averkiev, N. S.;
Gutkin, A. A.;
Reshchikov, M. A.

Publication type:

Article

Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1202, doi. 10.1134/1.1187849

By:

Venger, E. F.;
Kaganovich, É. B.;
Kirillova, S. I.;
Manoilov, É. G.;
Primachenko, V. E.;
Svechnikov, S. V.

Publication type:

Article

X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1229, doi. 10.1134/1.1187855

By:

Faleev, N. N.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Mikhrin, S. S.;
Ustinov, V. M.;
Pavlov, K. M.;
Punegov, V. I.;
Tabuchi, M.;
Takeda, Y.

Publication type:

Article

Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO[sub 2] interface.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1212, doi. 10.1134/1.1187851

By:

Bochkareva, N. I.;
Khorev, S. A.

Publication type:

Article

Statistical delay of microplasma breakdown in GaP p-n junctions.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1216, doi. 10.1134/1.1187852

By:

Bulyarskiı, S. V.;
Serëzhkin, Yu. N.;
Ionychev, V. K.

Publication type:

Article

On the transformation of the potential barrier at a GaAs/Au interface during heat treatment.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1221, doi. 10.1134/1.1187853

By:

Bednyı, B. I.

Publication type:

Article

Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric field.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1225, doi. 10.1134/1.1187854

By:

Zav’yalov, D. V.;
Kryuchkov, S. V.

Publication type:

Article

Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1206, doi. 10.1134/1.1187850

By:

Vasilevskiı, K. V.;
Rendakova, S. V.;
Nikitina, I. P.;
Babanin, A. I.;
Andreev, A. N.;
Zekentes, K.

Publication type:

Article

Quantum Hall effect in a single-mode wire.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1238, doi. 10.1134/1.1187856

By:

Kvon, Z. D.;
Ol’shanestkiı, E. B.;
Katkov, M. I.;
Plotnikov, A. E.;
Toropov, A. I.;
Moshegov, N. T.;
Casse, M.;
Portal, J. C.

Publication type:

Article

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1241, doi. 10.1134/1.1187857

By:

Kipshidze, D. G.;
Schenk, H. P.;
Fissel, A.;
Kaiser, U.;
Schulze, J.;
Richter, Wo.;
Weihnacht, M.;
Kunze, R.;
Kräusslich, J.

Publication type:

Article

Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1247, doi. 10.1134/1.1187858

By:

Dzhumaev, B. R.

Publication type:

Article

Conductivity and absorption edge of amorphous silicyne.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1251, doi. 10.1134/1.1187859

By:

Mashin, A. I.;
Khokhlov, A. F.

Publication type:

Article

Classification of single-electron devices.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1254, doi. 10.1134/1.1187860

By:

Abramov, I. I.;
Novik, E. G.

Publication type:

Article

Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states.

Published in:

Semiconductors, 1999, v. 33, n. 11, p. 1260, doi. 10.1134/1.1187861

By:

Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.

Publication type:

Article