Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 1
Results: 24
Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon.
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- Semiconductors, 1999, v. 33, n. 1, p. 101, doi. 10.1134/1.1187656
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Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse.
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- Semiconductors, 1999, v. 33, n. 1, p. 10, doi. 10.1134/1.1187638
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Fano effect in the magnetoabsorption spectra of gallium arsenide.
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- Semiconductors, 1999, v. 33, n. 1, p. 15, doi. 10.1134/1.1187639
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Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.
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- Semiconductors, 1999, v. 33, n. 1, p. 1, doi. 10.1134/1.1187636
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Correlation between the material parameters and conditions for the excitation of recombination waves in Si<S>.
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- Semiconductors, 1999, v. 33, n. 1, p. 20, doi. 10.1134/1.1187640
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- Article
Self-compensation in PbSe:Tl thin films.
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- Semiconductors, 1999, v. 33, n. 1, p. 22, doi. 10.1134/1.1187641
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Electronic structure of C[sub 60] films.
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- Semiconductors, 1999, v. 33, n. 1, p. 26, doi. 10.1134/1.1187642
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- Article
Quasi-gapless semiconductor: p-type indium arsenide.
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- Semiconductors, 1999, v. 33, n. 1, p. 31, doi. 10.1134/1.1187889
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Optical absorption in PbGa[sub 2]Se[sub 4] single crystals.
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- Semiconductors, 1999, v. 33, n. 1, p. 34, doi. 10.1134/1.1187643
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- Article
Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}–Sn[sub Ga](Si[sub Ga]) complexes in GaAs produced as a result of resonant polarized excitation.
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- Semiconductors, 1999, v. 33, n. 1, p. 37, doi. 10.1134/1.1187644
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- Article
Photoconductivity spectra of CdHgTe crystals with photoactive inclusions.
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- Semiconductors, 1999, v. 33, n. 1, p. 41, doi. 10.1134/1.1187645
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- Article
Theory of photovoltaic effects in crystals without an inversion center.
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- Semiconductors, 1999, v. 33, n. 1, p. 45, doi. 10.1134/1.1187646
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- Article
Ultrashallow p[sup +]-n junctions in Si(111): electron-beam diagnostics of the surface region.
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- Semiconductors, 1999, v. 33, n. 1, p. 51, doi. 10.1134/1.1187647
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- Article
Investigating the photosensitivity spectra of n-type GaAs–As[sub 2]Se[sub 3] heterojunctions.
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- Semiconductors, 1999, v. 33, n. 1, p. 56, doi. 10.1134/1.1187899
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- Article
Charging of deep-level centers and negative persistent photoconductivity in modulation-doped AlGaAs/GaAs heterostructures.
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- Semiconductors, 1999, v. 33, n. 1, p. 60, doi. 10.1134/1.1187648
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- Article
Conductivity of thin nanocrystalline silicon films.
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- Semiconductors, 1999, v. 33, n. 1, p. 66, doi. 10.1134/1.1187635
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Vertical screening in doped, intentionally disordered semiconductor superlattices.
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- Semiconductors, 1999, v. 33, n. 1, p. 69, doi. 10.1134/1.1187649
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- Article
Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity.
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- Semiconductors, 1999, v. 33, n. 1, p. 97, doi. 10.1134/1.1187655
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- Article
Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures.
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- Semiconductors, 1999, v. 33, n. 1, p. 6, doi. 10.1134/1.1187637
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- Article
Influence of thermal annealing on the intensity of the 1.54-μm photoluminescence band in erbium-doped amorphous hydrogenated silicon.
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- Semiconductors, 1999, v. 33, n. 1, p. 93, doi. 10.1134/1.1187654
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- Article
Optical intersubband transitions in strained quantum wells utilizing In[sub 1-x]Ga[sub x]As/InP solid solutions.
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- Semiconductors, 1999, v. 33, n. 1, p. 72, doi. 10.1134/1.1187650
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Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.
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- Semiconductors, 1999, v. 33, n. 1, p. 80, doi. 10.1134/1.1187651
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Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field.
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- Semiconductors, 1999, v. 33, n. 1, p. 85, doi. 10.1134/1.1187652
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Radiative tunneling recombination and luminescence of trapezoidal δ-doped superlattices.
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- Semiconductors, 1999, v. 33, n. 1, p. 89, doi. 10.1134/1.1187653
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