Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 9
Results: 26
Photocurrent amplification in AulSiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
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- Semiconductors, 1998, v. 32, n. 9, p. 1024, doi. 10.1134/1.1187538
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- Article
Spectral and mode characteristics of InAsSbP/InAsSbllnAsSbP lasers in the spectral region near 3.3 um
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- Semiconductors, 1998, v. 32, n. 9, p. 1019, doi. 10.1134/1.1187537
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Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors
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- Semiconductors, 1998, v. 32, n. 9, p. 1015
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- Article
Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities '
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- Semiconductors, 1998, v. 32, n. 9, p. 1006, doi. 10.1134/1.1187535
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Composition and porosity of multicomponent structures: porous silicon as a three-component system
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- Semiconductors, 1998, v. 32, n. 9, p. 1003, doi. 10.1134/1.1187534
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Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AIGaAs structure
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- Semiconductors, 1998, v. 32, n. 9, p. 1001
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Effect of the quantum-dot surface density in the active region on injection-laser characteristics
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- Semiconductors, 1998, v. 32, n. 9, p. 997, doi. 10.1134/1.1187532
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Energy spectrum of a nonideal quantum well in an electric field
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- Semiconductors, 1998, v. 32, n. 9, p. 992, doi. 10.1134/1.1187531
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- Article
Weak-field magnetoresistance of two-dimensional electrons in Ino.s3Ga0.47As/InP heterostructures in the persistent photoconductivity regime
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- Semiconductors, 1998, v. 32, n. 9, p. 985, doi. 10.1134/1.1187530
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- Article
Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters
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- Semiconductors, 1998, v. 32, n. 9, p. 980, doi. 10.1134/1.1187529
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- Article
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
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- Semiconductors, 1998, v. 32, n. 9, p. 975, doi. 10.1134/1.1187528
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- Article
The effect of a nonmonotonic potential profile on edge magnetic states
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- Semiconductors, 1998, v. 32, n. 9, p. 970, doi. 10.1134/1.1187527
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- Article
Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum
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- Semiconductors, 1998, v. 32, n. 9, p. 966, doi. 10.1134/1.1187526
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- Article
Determining surface recombination rates in epitaxial layers of n-CdxHg1_xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers
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- Semiconductors, 1998, v. 32, n. 9, p. 963, doi. 10.1134/1.1187525
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- Article
Current transport in porous p-Si and Pd-porous Si structures
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- Semiconductors, 1998, v. 32, n. 9, p. 960, doi. 10.1134/1.1187524
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- Article
Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures
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- Semiconductors, 1998, v. 32, n. 9, p. 957, doi. 10.1134/1.1187523
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- Article
Mobility of charge carriers in double-layer PbTe/PbS structures
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- Semiconductors, 1998, v. 32, n. 9, p. 953, doi. 10.1134/1.1187522
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- Article
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
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- Semiconductors, 1998, v. 32, n. 9, p. 950, doi. 10.1134/1.1187521
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- Article
Pressure dependence of the dielectric and optical properties of wide-gap semiconductors
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- Semiconductors, 1998, v. 32, n. 9, p. 947, doi. 10.1134/1.1187520
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- Article
The effect of antisite defects on the band structure and dielectric function of In1_xGaxSb solid solutions
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- Semiconductors, 1998, v. 32, n. 9, p. 944, doi. 10.1134/1.1187519
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- Article
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment.
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- Semiconductors, 1998, v. 32, n. 9, p. 939, doi. 10.1134/1.1187518
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Optical reflection in Pb0.78Sn0.22Te doped to 3 at.% with indium
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- Semiconductors, 1998, v. 32, n. 9, p. 937, doi. 10.1134/1.1187517
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Physical properties of CuxAgl_xlnsS8 single crystals and related surface-barrier structures
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- Semiconductors, 1998, v. 32, n. 9, p. 933
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- Article
Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride
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- Semiconductors, 1998, v. 32, n. 9, p. 924, doi. 10.1134/1.1187516
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Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon
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- Semiconductors, 1998, v. 32, n. 9, p. 921, doi. 10.1134/1.1187515
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Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals
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- Semiconductors, 1998, v. 32, n. 9, p. 917, doi. 10.1134/1.1187514
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- Article