Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 8
Results: 23
Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors.
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- Semiconductors, 1998, v. 32, n. 8, p. 801, doi. 10.1134/1.1187510
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In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth).
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- Semiconductors, 1998, v. 32, n. 8, p. 799
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Transport properties of microcrystalline silicon at low temperatures.
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- Semiconductors, 1998, v. 32, n. 8, p. 807, doi. 10.1134/1.1187511
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Synthesis and properties of Ge–Sb–S: NdCl[sub 3] glasses.
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- Semiconductors, 1998, v. 32, n. 8, p. 812
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Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors.
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- Semiconductors, 1998, v. 32, n. 8, p. 817, doi. 10.1134/1.1187513
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Recombination in hydrogenated amorphous silicon.
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- Semiconductors, 1998, v. 32, n. 8, p. 824, doi. 10.1134/1.1187467
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Modification of the electron spectrum and vibrational properties of amorphous carbon by copper doping.
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- Semiconductors, 1998, v. 32, n. 8, p. 831, doi. 10.1134/1.1187468
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Phase transitions occurring in glassy chalcogenide semiconductors induced by electric field or laser pulses.
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- Semiconductors, 1998, v. 32, n. 8, p. 838, doi. 10.1134/1.1187469
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Copper-induced changes in the properties of arsenic chalcogenides.
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- Semiconductors, 1998, v. 32, n. 8, p. 873
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Toward understanding the photoinduced changes in chalcogenide glasses.
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- Semiconductors, 1998, v. 32, n. 8, p. 850, doi. 10.1134/1.1187471
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Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films.
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- Semiconductors, 1998, v. 32, n. 8, p. 855, doi. 10.1134/1.1187472
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Photoinduced structural changes in amorphous semiconductors.
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- Semiconductors, 1998, v. 32, n. 8, p. 861, doi. 10.1134/1.1187473
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Chalcogenide glasses in optoelectronics.
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- Semiconductors, 1998, v. 32, n. 8, p. 867, doi. 10.1134/1.1187474
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Modeling of hypervalent configurations, valence alternation pairs, deformed structure, and properties of a-S and a-As[sub 2]S[sub 3].
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- Semiconductors, 1998, v. 32, n. 8, p. 843, doi. 10.1134/1.1187470
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Doping in metal chalcogenide glasses.
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- Semiconductors, 1998, v. 32, n. 8, p. 879, doi. 10.1134/1.1187476
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Characteristic features of the interaction of porous silicon with heavy water.
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- Semiconductors, 1998, v. 32, n. 8, p. 910, doi. 10.1134/1.1187482
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Ion implantation of porous gallium phosphide.
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- Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478
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A model of photoinduced anisotropy in glassy semiconductors.
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- Semiconductors, 1998, v. 32, n. 8, p. 891, doi. 10.1134/1.1187479
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Light absorption and photoluminescence of porous silicon.
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- Semiconductors, 1998, v. 32, n. 8, p. 896, doi. 10.1134/1.1187480
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Multimode nature and magnetophonon resonance of quaternary solid solutions of zinc, cadmium, and mercury tellurides.
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- Semiconductors, 1998, v. 32, n. 8, p. 901, doi. 10.1134/1.1187481
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Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method.
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- Semiconductors, 1998, v. 32, n. 8, p. 884, doi. 10.1134/1.1187477
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Information for Authors submitting papers for publication in the Russian language.
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- Semiconductors, 1998, v. 32, n. 8, p. 913
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Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 (March 1998)].
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- Semiconductors, 1998, v. 32, n. 8, p. 916, doi. 10.1134/1.1187348
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