Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon
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- Semiconductors, 1998, v. 32, n. 5, p. 565, doi. 10.1134/1.1187439
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- Publication type:
- Article
Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 5
Results: 25
1
2
Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure
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- Semiconductors, 1998, v. 32, n. 5, p. 521, doi. 10.1134/1.1187555
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3
Hopping.induced energy relaxation with allowance for all possible versions of intercenter transitions
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- Semiconductors, 1998, v. 32, n. 5, p. 504, doi. 10.1134/1.1187428
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- Article
4
Distinctive features of the magnetoresistance of degenerately doped n-lnAs and their influence on magnetic.field-dependent microwave absorption
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- Semiconductors, 1998, v. 32, n. 5, p. 497, doi. 10.1134/1.1187427
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- Article
5
Charge-carrier exclusion and accumulation intensified by ohmic contacts
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- Semiconductors, 1998, v. 32, n. 5, p. 568, doi. 10.1134/1.1187440
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- Article
6
Creation of vicinal facets on the surface of gallium arsenide with orientations close to (100) under conditions of nonequilibrium mass transfer
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- Semiconductors, 1998, v. 32, n. 5, p. 269, doi. 10.1134/1.1187420
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- Article
7
Nonmonotonic character of the growth-temperature dependence of the resistance of polycrystalline silicon films
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- Semiconductors, 1998, v. 32, n. 5, p. 562, doi. 10.1134/1.1187438
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- Article
8
Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
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- Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437
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- Article
9
Investigation of the photovoltage in por-Silp-Si structures by the pulsed-photovoltage method
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- Semiconductors, 1998, v. 32, n. 5, p. 549, doi. 10.1134/1.1187436
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- Publication type:
- Article
10
Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAslAIxGa1_xAS superlattice with doped quantum wells
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- Semiconductors, 1998, v. 32, n. 5, p. 544, doi. 10.1134/1.1187435
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- Article
11
Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier
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- Semiconductors, 1998, v. 32, n. 5, p. 539, doi. 10.1134/1.1187434
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- Article
12
Transport properties of magnetoexcitons in coupled quantum wells
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- Semiconductors, 1998, v. 32, n. 5, p. 533, doi. 10.1134/1.1187433
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- Article
13
Mechanism of anodic electroluminescence of porous silicon in electrolytes
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- Semiconductors, 1998, v. 32, n. 5, p. 529, doi. 10.1134/1.1187556
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- Publication type:
- Article
14
Heterojunction based on semiconductors with the chain structure TISe-TIInSe2
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- Semiconductors, 1998, v. 32, n. 5, p. 526, doi. 10.1134/1.1187432
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- Publication type:
- Article
15
Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs
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- Semiconductors, 1998, v. 32, n. 5, p. 484, doi. 10.1134/1.1187423
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- Publication type:
- Article
16
Differential resistance of AulGaAs1_xSbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1_xSbx
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- Semiconductors, 1998, v. 32, n. 5, p. 517, doi. 10.1134/1.1187431
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- Article
17
Differential resistance of Au/GaAs1_xSbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1_xSbx
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- Semiconductors, 1998, v. 32, n. 5, p. 513, doi. 10.1134/1.1187430
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- Publication type:
- Article
18
Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals
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- Semiconductors, 1998, v. 32, n. 5, p. 509, doi. 10.1134/1.1187429
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- Publication type:
- Article
19
How the type of bombarding ion affects the formation of radiation defects in silicon
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- Semiconductors, 1998, v. 32, n. 5, p. 456, doi. 10.1134/1.1187419
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- Article
20
Natural nonuniformities in the height of a Schottky barrier
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- Semiconductors, 1998, v. 32, n. 5, p. 495, doi. 10.1134/1.1187426
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- Article
21
Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films
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- Semiconductors, 1998, v. 32, n. 5, p. 491, doi. 10.1134/1.1187425
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- Publication type:
- Article
22
Distinctive features of the far-infrared reflection spectra of the semimagnetic semiconductors Hg1 _xMnxTe1_ySey
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- Semiconductors, 1998, v. 32, n. 5, p. 488, doi. 10.1134/1.1187424
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- Publication type:
- Article
23
A quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys
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- Semiconductors, 1998, v. 32, n. 5, p. 473, doi. 10.1134/1.1187421
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- Article
24
Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs
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- Semiconductors, 1998, v. 32, n. 5, p. 479, doi. 10.1134/1.1187422
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- Publication type:
- Article
25
Nanometer-size atomic clusters in semiconductors--a new approach to tailoring material properties
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 257
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- Publication type:
- Article